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1. 发明申请

US20110118494A1 SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD 有权
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US20110118494A1
公开(公告)日：2011-05-19
申请号：US12943466
申请日：2010-11-10
申请人： Masaaki YOSHIDA , Mai SUGAWARA , Naohisa UENO , Jun KOSHIYAMA
发明人： Masaaki YOSHIDA , Mai SUGAWARA , Naohisa UENO , Jun KOSHIYAMA
IPC分类号： C07F7/10 , C07F7/21
CPC分类号： C07F7/10 , G03F7/11
摘要： Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.
摘要翻译：即使在基材表面的材料为TiN或SiN的情况下，也可以使用这种表面处理剂的表面处理方法，能够高度疏水化的表面处理剂。本发明的表面处理剂含有环状硅氮烷化合物。作为该环状硅氮烷化合物，可以使用2,2,5,5-四甲基-2,5-二脱氧-1-氮杂环戊烷和2,2,6,6-四甲基-2,6-二脱氧-1- 氮杂环己烷和环状三硅氮烷化合物如2,2,4,4,6,6-六甲基环三硅氮烷和2,4,6-三甲基-2,4,6-三乙烯基环三氮烷是优选的。在表面处理中，将基材表面暴露于根据本发明的表面处理剂，并且将基材表面疏水化。

2. 发明申请

US20110159447A1 DEVELOPING SOLUTION FOR PHOTOLITHOGRAPHY, METHOD FOR FORMING RESIST PATTERN, AND METHOD AND APPARATUS FOR PRODUCING DEVELOPING SOLUTION FOR PHOTOLITHOGRAPHY 审中-公开
标题翻译：用于光刻技术的发展解决方案，用于形成电阻图案的方法，以及用于生产用于光刻机的开发解决方案的方法和装置
公开(公告)号：US20110159447A1
公开(公告)日：2011-06-30
申请号：US12970803
申请日：2010-12-16
申请人： Tomoya KUMAGAI , Naohisa UENO , Jun KOSHIYAMA
发明人： Tomoya KUMAGAI , Naohisa UENO , Jun KOSHIYAMA
IPC分类号： G03F7/32 , B01F15/06
CPC分类号： G03F7/322 , B01F3/088 , B01F3/20 , B01F3/2078 , B01F7/18 , B01F15/00175 , B01F15/00207 , B01F15/00396
摘要： Firstly, to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. Secondary, to provide a method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The present invention is firstly a developing solution for photolithography comprising tetrabutylammonium hydroxide (A), and at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3). The present invention is secondary characterized by maintaining the temperature of liquid at 27° C. or higher during dilution.
摘要翻译：首先，为了提供使用四丁基氢氧化铵（TBAH）作为显影液的碱性试剂的光刻的显影液，抑制了TBAH的沉积。二次提供一种通过稀释含有TBAH的浓缩显影液和用于制造方法的制造装置制造显影液时能够抑制TBAH沉积的光刻显影液的制造方法。本发明首先是一种包括四丁基氢氧化铵（A）和选自水溶性有机溶剂（B1），表面活性剂（B2）和包合物（B3））中的至少一种的光刻技术的显影液，。本发明的二次特征在于在稀释期间将液体的温度保持在27℃或更高。

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