专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07602431B2 Solid-state imaging element and solid-state imaging apparatus 失效
标题翻译：固态成像元件和固态成像装置
公开(公告)号：US07602431B2
公开(公告)日：2009-10-13
申请号：US11533616
申请日：2006-09-20
申请人： Masaaki Takayama , Hiroaki Tanaka
发明人： Masaaki Takayama , Hiroaki Tanaka
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N9/045 , H04N2209/045
摘要： A solid-state imaging element includes: a plurality of light receiving elements provided within an imaging region on a semiconductor substrate; a color filter with a plurality of colors provided on the plurality of light receiving elements for filtering with a predetermined color; a vertical shift register disposed adjacent to the light receiving elements for transferring a charge from the light receiving elements; and a first horizontal shift register and a second shift register disposed interposing the imaging region therebetween for transferring a charge transferred from the vertical shift register and outputting a signal in accordance with the charge, respectively; wherein a respective charge of the light receiving elements accumulated therein in accordance with a light transmitted through filters of the same color in the color filter is transferred exclusively via either one of the first horizontal shift register or the second horizontal shift register to be outputted as the signal.
摘要翻译：固态成像元件包括：设置在半导体衬底上的成像区域内的多个光接收元件; 具有多个颜色的滤色器，设置在所述多个光接收元件上，用于以预定颜色进行滤波; 垂直移位寄存器，其设置成与光接收元件相邻，用于从光接收元件传送电荷; 以及第一水平移位寄存器和第二移位寄存器，其设置在其间插入成像区域，用于传送从垂直移位寄存器传送的电荷并分别根据电荷输出信号; 其中根据通过滤色器中相同颜色的滤光器透射的光累积在其中的光接收元件的相应电荷仅通过第一水平移位寄存器或第二水平移位寄存器中的任一个被传送，作为信号。

2. 发明申请

US20070132871A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20070132871A1
公开(公告)日：2007-06-14
申请号：US11609074
申请日：2006-12-11
申请人： Masaaki Takayama , Hiroaki Tanaka
发明人： Masaaki Takayama , Hiroaki Tanaka
IPC分类号： H04N5/335
CPC分类号： H01L27/14843 , H01L27/14812
摘要： A solid-state imaging device includes an imaging part, a first horizontal charge-transfer part and a second horizontal charge-transfer part that transfer charges transferred from the imaging part in a horizontal direction, an inter-horizontal charge-transfer part transfer electrode that applies a voltage to a transfer channel area provided between the first horizontal charge-transfer part and the second horizontal charge-transfer part, and a first light-shielding film that is provided over the first horizontal charge-transfer part and the second horizontal charge-transfer part and is made of a conductive material, and the inter-horizontal charge-transfer part transfer electrode and the first light-shielding film are electrically connected to each other.
摘要翻译：固态成像装置包括：成像部，第一水平电荷转移部和第二水平电荷转移部，其在水平方向上转移从成像部转移的电荷;水平间电荷转移部转移电极，对设置在第一水平电荷转移部分和第二水平电荷转移部分之间的转移通道区域施加电压，以及设置在第一水平电荷转移部分和第二水平电荷转移部分上的第一屏蔽膜，并且由导电材料制成，并且水平间电荷转移部分转印电极和第一遮光膜彼此电连接。

3. 发明申请

US20070070232A1 SOLID-STATE IMAGING ELMENT AND SOLID-STATE IMAGING APPARATUS 失效
标题翻译：固态成像和固态成像装置
公开(公告)号：US20070070232A1
公开(公告)日：2007-03-29
申请号：US11533616
申请日：2006-09-20
申请人： Masaaki Takayama , Hiroaki Tanaka
发明人： Masaaki Takayama , Hiroaki Tanaka
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H04N2209/045
摘要： A solid-state imaging element includes: a plurality of light receiving elements provided within an imaging region on a semiconductor substrate; a color filter with a plurality of colors provided on the plurality of light receiving elements for filtering with a predetermined color; a vertical shift register disposed adjacent to the light receiving elements for transferring a charge from the light receiving elements; and a first horizontal shift register and a second shift register disposed interposing the imaging region therebetween for transferring a charge transferred from the vertical shift register and outputting a signal in accordance with the charge, respectively; wherein a respective charge of the light receiving elements accumulated therein in accordance with a light transmitted through filters of the same color in the color filter is transferred exclusively via either one of the first horizontal shift register or the second horizontal shift register to be outputted as the signal.
摘要翻译：固态成像元件包括：设置在半导体衬底上的成像区域内的多个光接收元件; 具有多个颜色的滤色器，设置在所述多个光接收元件上，用于以预定颜色进行滤波; 垂直移位寄存器，其设置成与光接收元件相邻，用于从光接收元件传送电荷; 以及第一水平移位寄存器和第二移位寄存器，其设置在其间插入成像区域，用于传送从垂直移位寄存器传送的电荷并分别根据电荷输出信号; 其中根据通过滤色器中相同颜色的滤色器透射的光积累在其中的光接收元件的相应电荷仅通过第一水平移位寄存器或第二水平移位寄存器中的任一个传送，作为信号。

4. 发明授权

US07589777B2 Solid-state imaging device with light shield electrically connected to inter-horizontal transfer register 失效
标题翻译：固态成像设备，带有屏蔽电气连接到水平间传输寄存器
公开(公告)号：US07589777B2
公开(公告)日：2009-09-15
申请号：US11609074
申请日：2006-12-11
申请人： Masaaki Takayama , Hiroaki Tanaka
发明人： Masaaki Takayama , Hiroaki Tanaka
IPC分类号： H04N3/14 , H04N5/335 , H01L31/062
CPC分类号： H01L27/14843 , H01L27/14812
摘要： A solid-state imaging device includes an imaging part, a first horizontal charge-transfer part and a second horizontal charge-transfer part that transfer charges transferred from the imaging part in a horizontal direction, an inter-horizontal charge-transfer part transfer electrode that applies a voltage to a transfer channel area provided between the first horizontal charge-transfer part and the second horizontal charge-transfer part, and a first light-shielding film that is provided over the first horizontal charge-transfer part and the second horizontal charge-transfer part and is made of a conductive material, and the inter-horizontal charge-transfer part transfer electrode and the first light-shielding film are electrically connected to each other.
摘要翻译：固态成像装置包括：成像部，第一水平电荷转移部和第二水平电荷转移部，其在水平方向上转移从成像部转移的电荷;水平间电荷转移部转移电极，对设置在第一水平电荷转移部分和第二水平电荷转移部分之间的转移通道区域施加电压，以及设置在第一水平电荷转移部分和第二水平电荷转移部分上的第一屏蔽膜，并且由导电材料制成，并且水平间电荷转移部分转印电极和第一遮光膜彼此电连接。

5. 发明授权

US10962776B2 Display device, display system, mobile object, display control method, and recording medium storing program code 有权
公开(公告)号：US10962776B2
公开(公告)日：2021-03-30
申请号：US16779843
申请日：2020-02-03
申请人： Hiroaki Tanaka , Toshihiro Yamashiro
发明人： Hiroaki Tanaka , Toshihiro Yamashiro
IPC分类号： G02B27/01
摘要： A display device includes a light source; a light deflector configured to deflect light emitted from the light source to scan as scanning light in a main scanning direction and a sub-scanning direction; a screen having a scanning area to be two-dimensionally scanned with the scanning light at a predetermined cycle, the scanning area having a first area and a second area that differ in position in the sub-scanning direction; a light receiver disposed on the screen, configured to detect the light scanning in each of the first area and the second area of the screen; and a control unit configured to adjust a position of the scanning light in the scanning area according to the number of scanning lines in each of the first area and the second area.

6. 发明授权

US09372433B2 Electrostatic latent image forming method, electrostatic latent image forming apparatus, and image forming apparatus 有权
公开(公告)号：US09372433B2
公开(公告)日：2016-06-21
申请号：US14830352
申请日：2015-08-19
申请人： Hiroyuki Suhara , Hiroaki Tanaka
发明人： Hiroyuki Suhara , Hiroaki Tanaka
IPC分类号： G03G15/043 , B41J2/385 , B41J2/435
CPC分类号： G03G15/043 , B41J2/385 , B41J2/435
摘要： An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.

7. 发明申请

US20150054075A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150054075A1
公开(公告)日：2015-02-26
申请号：US14501244
申请日：2014-09-30
申请人： Tadahiro Ohmi , Hiroaki Tanaka
发明人： Tadahiro Ohmi , Hiroaki Tanaka
IPC分类号： H01L29/10 , H01L29/417 , H01L29/45 , H01L29/78
CPC分类号： H01L29/1087 , H01L27/1203 , H01L29/41733 , H01L29/458 , H01L29/7816
摘要： There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.
摘要翻译：提供了一种半导体器件。 n型晶体管形成在硅衬底的（551）表面上。与n型晶体管的扩散区域（重掺杂区域）接触的硅化物层区域的厚度不大于5nm。与硅化物层接触的金属层区域的厚度为25nm（含）〜400nm（含）。硅化物层区域和扩散区域之间的势垒高度在该厚度关系中具有最小值。

8. 发明授权

US08836150B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08836150B2
公开(公告)日：2014-09-16
申请号：US13989962
申请日：2010-11-29
申请人： Hiroaki Tanaka
发明人： Hiroaki Tanaka
IPC分类号： H01L23/498 , H01L23/00 , H01L29/739 , H01L29/417
CPC分类号： H01L23/498 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/417 , H01L29/41741 , H01L29/7397 , H01L2224/04042 , H01L2224/05553 , H01L2224/05557 , H01L2224/05624 , H01L2224/451 , H01L2224/48091 , H01L2224/48132 , H01L2224/4847 , H01L2224/48491 , H01L2224/49175 , H01L2224/85205 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要翻译：在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。

9. 发明授权

US08704937B2 Imaging optical system, imaging device, and digital apparatus 有权
标题翻译：成像光学系统，成像设备和数字设备
公开(公告)号：US08704937B2
公开(公告)日：2014-04-22
申请号：US13837623
申请日：2013-03-15
申请人： Keiji Matsusaka , Hiroaki Tanaka
发明人： Keiji Matsusaka , Hiroaki Tanaka
IPC分类号： H04N5/225 , G02B9/34
CPC分类号： G02B3/00 , G02B3/04 , G02B13/004 , G02B13/18 , H04N5/23245
摘要： An imaging optical system, an imaging device, and a digital apparatus have a four lens construction with positive, negative, positive, and negative refractive powers. A surface position at the maximum effective diameter of the second lens element is located on the object side than a surface vertex thereof. The fourth lens element has an inflection point at a position other than the intersection of the optical axis and the fourth lens element. The optical system satisfies the following conditions. 0.7 72 ν4>50, and 0.55
摘要翻译：成像光学系统，成像装置和数字装置具有正，负，正和负折射力的四透镜结构。第二透镜元件的最大有效直径处的表面位置位于物体侧，而不是其表面顶点。第四透镜元件在光轴和第四透镜元件的交点以外的位置具有拐点。光学系统满足以下条件。 0.7 72＆ ; 4> 50和0.55

10. 发明申请

US20130241084A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130241084A1
公开(公告)日：2013-09-19
申请号：US13989962
申请日：2010-11-29
申请人： Hiroaki Tanaka
发明人： Hiroaki Tanaka
IPC分类号： H01L23/498
CPC分类号： H01L23/498 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/417 , H01L29/41741 , H01L29/7397 , H01L2224/04042 , H01L2224/05553 , H01L2224/05557 , H01L2224/05624 , H01L2224/451 , H01L2224/48091 , H01L2224/48132 , H01L2224/4847 , H01L2224/48491 , H01L2224/49175 , H01L2224/85205 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要翻译：在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式