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1. 发明申请

US20080264483A1 AMORPHOUS SILICON PHOTOVOLTAIC CELLS HAVING IMPROVED LIGHT TRAPPING AND ELECTRICITY-GENERATING METHOD 审中-公开
标题翻译：具有改进的光线捕获和电生成方法的非晶硅光电池
公开(公告)号：US20080264483A1
公开(公告)日：2008-10-30
申请号：US11875367
申请日：2007-10-19
申请人： Marvin S. Keshner , Paul McClelland , Rajeewa R. Arya
发明人： Marvin S. Keshner , Paul McClelland , Rajeewa R. Arya
IPC分类号： H01L31/04
CPC分类号： H01L31/20 , H01L31/022466 , H01L31/02366 , Y02E10/50
摘要： An amorphous silicon photovoltaic cell exhibiting improved light trapping, and a method for generating electricity from sunlight therewith. The cell comprises a plurality of layers, including a transparent superstrate; a specular, first transparent conductor positioned below the transparent superstrate; at least one p-i-n structure having an active layer positioned below the first transparent conductor; a second transparent conductor positioned below the p-i-n structure; and a layer of transparent material positioned below the second transparent conductor. The layer of transparent material may be textured amorphous silicon having a relatively high dielectric constant. The cell may further include a back coating positioned below the layer of transparent material, and a back reflector positioned below the back coating layer.
摘要翻译：表现出改善的光捕获的非晶硅光伏电池，以及由阳光发电的方法。该电池包括多个层，包括透明的覆层; 位于透明覆盖层下方的镜面第一透明导体; 至少一个p-i-n结构，其具有位于所述第一透明导体下方的有源层; 位于p-i-n结构下方的第二透明导体; 以及位于第二透明导体下方的透明材料层。透明材料层可以是具有相对较高介电常数的织构化非晶硅。电池还可以包括位于透明材料层下方的背涂层，以及位于背涂层下方的后反射器。

2. 发明授权

US06368892B1 Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys 失效
标题翻译：具有非晶硅和CIS及其合金的单片多结太阳能电池
公开(公告)号：US06368892B1
公开(公告)日：2002-04-09
申请号：US09606298
申请日：2000-06-29
申请人： Rajeewa R. Arya
发明人： Rajeewa R. Arya
IPC分类号： H01L2120
CPC分类号： H01L31/078 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Efficient broader spectrum monolithic solar cells are produced by coupling a CIS or CIGS polycrystalline semiconductor to an amorphous silicon semiconductor. Coupling can be accomplished with a n-type conductor, such as cadmium sulfide or microcrystalline n-duped amorphous silicon. Cadmium sulfide can be deposited on the CIS or CIGS polycrystalline semiconductor by solution growth, sputtering or evaporation. A transparent conductive oxide can be deposited on the cadmium sulfide by low pressure chemical vapor deposition. The microcrystalline n-doped amorphous silicon and the amorphous silicon semiconductor can be deposited by enhanced plasma chemical vapor deposition. The amorphous silicon can comprise: hydrogenated amorphous silicon, hydrogenated amorphous silicon carbon, or hydrogenated amorphous silicon germanium. Triple junction solar cells can be produced with an amorphous silicon front cell, an amorphous silicon germanium middle cell, and a CIS or CIGS polycrystalline back cell, on a substrate.
摘要翻译：通过将CIS或CIGS多晶半导体耦合到非晶硅半导体来生产有效的宽频单片太阳能电池。可以用n型导体，例如硫化镉或微晶n掺杂非晶硅来实现耦合。硫化镉可以通过溶液生长，溅射或蒸发沉积在CIS或CIGS多晶半导体上。透明导电氧化物可以通过低压化学气相沉积沉积在硫化镉上。可以通过增强的等离子体化学气相沉积来沉积微晶n掺杂非晶硅和非晶硅半导体。非晶硅可以包括：氢化非晶硅，氢化非晶硅碳或氢化非晶硅锗。可以在衬底上用非晶硅前电池，非晶硅锗中间电池和CIS或CIGS多晶背电池制造三联结太阳能电池。

3. 发明授权

US5246506A Multijunction photovoltaic device and fabrication method 失效
标题翻译：多功能光伏器件和制造方法
公开(公告)号：US5246506A
公开(公告)日：1993-09-21
申请号：US730177
申请日：1991-07-16
申请人： Rajeewa R. Arya , Anthony W. Catalano
发明人： Rajeewa R. Arya , Anthony W. Catalano
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/076 , H01L31/20
CPC分类号： H01L31/076 , H01L31/03765 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

4. 发明授权

US5055141A Enhancement of short-circuit current by use of wide bandgap N-layers in P-I-N amorphous silicon photovoltaic cells 失效
标题翻译：在P-I-N非晶硅光伏电池中使用宽带束N层的短路电流的增强
公开(公告)号：US5055141A
公开(公告)日：1991-10-08
申请号：US467367
申请日：1990-01-19
申请人： Rajeewa R. Arya , Anthony W. Catalano
发明人： Rajeewa R. Arya , Anthony W. Catalano
IPC分类号： H01L31/04 , H01L31/0352 , H01L31/075 , H01L31/20
CPC分类号： B82Y20/00 , H01L31/035245 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S148/16
摘要： A photovoltaic cell that includes a transparent substrate, a front conductive layer formed on the substrate, a p-type layer formed on the front conductive layer, an i-layer of amorphous silicon formed on the p-layer, a wide bandgap n-type layer formed on the i-layer and a back contact layer formed on the n-type structure. The wide bandgap n-type layer may be an n-type sandwich structure which includes first, second, and third n-layers successively formed on one another. The first n-layer is formed on the i-layer, the second n-layer is formed on the first n-layer, and the n-layer is formed on the second n-layer. The second n-layer has an optical bandgap wider than the optical bandgap of the first and second n-type layers.

5. 发明授权

US6121541A Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys 失效
公开(公告)号：US6121541A
公开(公告)日：2000-09-19
申请号：US900160
申请日：1997-07-28
申请人： Rajeewa R. Arya
发明人： Rajeewa R. Arya
IPC分类号： H01L31/032 , H01L31/078 , H01L31/0376 , H01L31/0272 , H01L31/0392
CPC分类号： H01L31/078 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Efficient broader spectrum monolithic solar cells are produced by coupling a CIS or CIGS polycrystalline semiconductor to an amorphous silicon semiconductor. Coupling can be accomplished with a n-type conductor, such as cadmium sulfide or microcrystalline n-doped amorphous silicon. Cadmium sulfide can be deposited on the CIS or CIGS polycrystalline semiconductor by solution growth, sputtering or evaporation. A transparent conductive oxide can be deposited on the cadmium sulfide by low pressure chemical vapor deposition. The microcrystalline n-doped amorphous silicon and the amorphous silicon semiconductor can be deposited by enhanced plasma chemical vapor deposition. The amorphous silicon can comprise: hydrogenated amorphous silicon, hydrogenated amorphous silicon carbon, or hydrogenated amorphous silicon germanium. Triple junction solar cells can be produced with an amorphous silicon front cell, an amorphous silicon germanium middle cell, and a CIS or CIGS polycrystalline back cell, on a substrate.

6. 发明授权

US4749454A Method of removing electrical shorts and shunts from a thin-film semiconductor device 失效
标题翻译：从薄膜半导体器件去除电短路和分路的方法
公开(公告)号：US4749454A
公开(公告)日：1988-06-07
申请号：US931072
申请日：1986-11-17
申请人： Rajeewa R. Arya , Robert S. Oswald
发明人： Rajeewa R. Arya , Robert S. Oswald
IPC分类号： H01L31/04 , H01L21/28 , H01L21/316 , H01L21/3213 , H01L27/142 , H01L31/20 , C25F3/12
CPC分类号： H01L31/208 , H01L21/28 , H01L21/31687 , H01L21/32134 , H01L31/046 , Y02E10/50 , Y02P70/521 , Y10S136/29
摘要： A method of removing electrical shorts and shunts from a thin-film semiconductor device having pairs of electrodes with exposed contact surfaces wherein each pair of electrodes is separated by a semiconductor film. The disclosed method comprises the steps of coating the exposed contact surfaces with an ionic solution and successively applying a reverse-bias voltage between the exposed contact surfaces of each pair of electrodes. The ionic solution has an etching rate that increases with increased temperature so that the leakage current flowing through shorts and shunts located between each respective pair of electrodes in response to the reverse-bias voltage will create a local temperature increase at the shorts and shunts and selectively etch or oxidize the shorts and shunts, rendering them substantially nonconductive. The exposed contact surfaces can be coated using a sponge applicator or spray apparatus. The preferred ionic solution comprises an acid mixture diluted to one part in at least five parts water.
摘要翻译：从具有暴露的接触表面的电极对的薄膜半导体器件中去除电短路和分流的方法，其中每对电极被半导体膜分离。所公开的方法包括以下步骤：用离子溶液涂覆暴露的接触表面，并且在每对电极的暴露的接触表面之间连续施加反向偏置电压。离子溶液具有随着温度升高而增加的蚀刻速率，使得响应于反向偏置电压流过位于每对相应电极之间的短路和分路的漏电流将在短路和分流和选择性地产生局部温度升高蚀刻或氧化短路和分路，使它们基本上不导电。暴露的接触表面可以使用海绵施用器或喷雾装置进行涂覆。优选的离子溶液包含在至少五份水中稀释至一部分的酸混合物。

7. 发明授权

US4718947A Superlattice doped layers for amorphous silicon photovoltaic cells 失效
标题翻译：用于非晶硅光伏电池的超晶格掺杂层
公开(公告)号：US4718947A
公开(公告)日：1988-01-12
申请号：US853032
申请日：1986-04-17
申请人： Rajeewa R. Arya
发明人： Rajeewa R. Arya
IPC分类号： H01L31/0352 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： B82Y20/00 , H01L31/035245 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521 , Y10S148/16
摘要： Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.
摘要翻译：非晶硅光伏电池的超晶格掺杂层包括彼此交替形成的多个非晶硅的第一和第二晶格。每个第一晶格具有第一光学带隙，并且每个第二晶格具有不同于第一光学带隙的第二光学带隙。还公开了制造超晶格掺杂层的方法。

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