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1. 发明申请

US20130042664A1 Method for the functional checking of an inertial sensor and inertial sensor 审中-公开
标题翻译：惯性传感器和惯性传感器的功能检查方法
公开(公告)号：US20130042664A1
公开(公告)日：2013-02-21
申请号：US13586282
申请日：2012-08-15
申请人： Martin Wrede , Klaus Petzold , Burkhard Kuhlmann , Uwe Tellermann , Markus Brockmann , Marian Keck , Thorsten Balslink
发明人： Martin Wrede , Klaus Petzold , Burkhard Kuhlmann , Uwe Tellermann , Markus Brockmann , Marian Keck , Thorsten Balslink
IPC分类号： G01P15/097 , G01P21/00
CPC分类号： G01P15/097 , G01C19/5762 , G01C25/005 , G01P15/125 , G01P21/00
摘要： A method for providing functional checking of an inertial sensor, a first test signal having a first frequency being fed in at a test electrode of the inertial sensor for exciting a vibration of a vibration mass and a first response signal corresponding to the vibration mass is recorded, a second test signal having a second frequency different from the first frequency being fed in at the test electrode, a second response signal corresponding to the vibration mass being recorded, and the two response signals being evaluated. Also described is an inertial sensor.
摘要翻译：一种用于提供惯性传感器的功能检查的方法，记录了在惯性传感器的测试电极处馈送第一频率的第一测试信号，用于激发振动质量的振动和对应于振动质量的第一响应信号第二测试信号具有不同于在测试电极处馈入的第一频率的第二频率，对应于所记录的振动质量的第二响应信号，并且评估两个响应信号。还描述了惯性传感器。

2. 发明授权

US07265426B2 High-voltage MOS transistor and corresponding manufacturing method 有权
标题翻译：高压MOS晶体管及相应的制造方法
公开(公告)号：US07265426B2
公开(公告)日：2007-09-04
申请号：US11191894
申请日：2005-07-27
申请人： Klaus Petzold , Steffi Lindenkreuz , Joachim Strauss
发明人： Klaus Petzold , Steffi Lindenkreuz , Joachim Strauss
IPC分类号： H01L29/94
CPC分类号： H01L29/0847 , H01L29/0626 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A high-voltage MOS transistor having: a first region of a first conductivity type; a source region of the second conductivity type, which is introduced into the first region; a drain region of the second conductivity type, which is introduced into the first region; a channel region on the upper side of the first region, between the source region and the drain region; a field-oxide region in the drain region, between the source region and the drain region; a gate-oxide region over the channel region and between the edge of the drain region and the field-oxide region; a magnetoresistor region between the source region and the drain region, over the gate-oxide region and over at least a part of the field-oxide region; the drain region having a drain-terminal region and a drain-extension region and the doping profile of the drain-extension region is designed so that an avalanche breakdown occurs between the source region and the drain region, in a breakdown region that is on the edge of the drain-extension region and is not situated at the upper surface. Also it describes corresponding manufacturing methods.
摘要翻译：一种高电压MOS晶体管，具有：具有第一导电类型的第一区域; 第二导电类型的源极区域，被引入第一区域; 第二导电类型的漏极区域，被引入第一区域; 在所述源极区域和所述漏极区域之间的所述第一区域的上侧的沟道区域; 在漏极区域中的源极区域和漏极区域之间的场氧化物区域; 沟道区域上方的漏极区域和场氧化物区域的边缘之间的栅极 - 氧化物区域; 源区域和漏极区域之间的磁阻电阻区域，在栅极 - 氧化物区域上方和场氧化物区域的至少一部分上方; 具有漏极 - 端子区域和漏极 - 延伸区域的漏极区域以及漏极 - 延伸区域的掺杂分布被设计成使得在源极区域和漏极区域之间发生雪崩击穿，漏极延伸区域的边缘并且不位于上表面。它也描述了相应的制造方法。

3. 发明申请

US20060022294A1 High-voltage MOS transistor and corresponding manufacturing method 有权
标题翻译：高压MOS晶体管及相应的制造方法
公开(公告)号：US20060022294A1
公开(公告)日：2006-02-02
申请号：US11191894
申请日：2005-07-27
申请人： Klaus Petzold , Steffi Lindenkreuz , Joachim Strauss
发明人： Klaus Petzold , Steffi Lindenkreuz , Joachim Strauss
IPC分类号： H01L23/58 , H01L21/336
CPC分类号： H01L29/0847 , H01L29/0626 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A high-voltage MOS transistor having: a first region of a first conductivity type; a source region of the second conductivity type, which is introduced into the first region; a drain region of the second conductivity type, which is introduced into the first region; a channel region on the upper side of the first region, between the source region and the drain region; a field-oxide region in the drain region, between the source region and the drain region; a gate-oxide region over the channel region and between the edge of the drain region and the field-oxide region; a magnetoresistor region between the source region and the drain region, over the gate-oxide region and over at least a part of the field-oxide region; the drain region having a drain-terminal region and a drain-extension region and the doping profile of the drain-extension region is designed so that an avalanche breakdown occurs between the source region and the drain region, in a breakdown region that is on the edge of the drain-extension region and is not situated at the upper surface. Also it describes corresponding manufacturing methods.
摘要翻译：一种高电压MOS晶体管，具有：具有第一导电类型的第一区域; 第二导电类型的源极区域，被引入第一区域; 第二导电类型的漏极区域，被引入第一区域; 在所述源极区域和所述漏极区域之间的所述第一区域的上侧的沟道区域; 在漏极区域中的源极区域和漏极区域之间的场氧化物区域; 沟道区域上方的漏极区域和场氧化物区域的边缘之间的栅极 - 氧化物区域; 源区域和漏极区域之间的磁阻电阻区域，在栅极 - 氧化物区域上方和场氧化物区域的至少一部分上方; 具有漏极 - 端子区域和漏极 - 延伸区域的漏极区域以及漏极 - 延伸区域的掺杂分布被设计成使得在源极区域和漏极区域之间发生雪崩击穿，漏极延伸区域的边缘并且不位于上表面。它也描述了相应的制造方法。

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