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1. 发明授权

US07291782B2 Optoelectronic device and fabrication method 有权
公开(公告)号：US07291782B2
公开(公告)日：2007-11-06
申请号：US10290119
申请日：2002-11-05
申请人： Brian M. Sager , Martin R. Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory A. Miller , Dong Yu
发明人： Brian M. Sager , Martin R. Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory A. Miller , Dong Yu
IPC分类号： H01L31/0352
CPC分类号： H01L51/4226 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0064 , H01L51/0078 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architected (e.g., surfactant-templated) film having interconnected pores that are accessible from both the underlying and overlying layers. A pore-filling material substantially fills the pores. The interconnected pores have diameters of about 1-100 nm and are distributed in a substantially uniform fashion with neighboring pores separated by a distance of about 1-100 nm. The nano-architected porous film and the pore-filling, material have complementary charge-transfer properties with respect to each other, i.e., one is an electron-acceptor and the other is a hole-acceptor. The nano-architected porous, film may be formed on a substrate by a surfactant temptation technique such as evaporation-induced self-assembly. A solar power generation system may include an array of such optoelectronic devices in the form of photovoltaic cells with one or more cells in the array having one or more porous charge-splitting networks disposed between an electron-accepting electrode and a hole-accepting electrode.

2. 发明授权

US07253017B1 Molding technique for fabrication of optoelectronic devices 有权
标题翻译：用于制造光电器件的成型技术
公开(公告)号：US07253017B1
公开(公告)日：2007-08-07
申请号：US10303665
申请日：2002-11-22
申请人： Martin R. Roscheisen , Brian M. Sager , Jacqueline Fidanza , Klaus Petritsch , Gregory A. Miller , Dong Yu
发明人： Martin R. Roscheisen , Brian M. Sager , Jacqueline Fidanza , Klaus Petritsch , Gregory A. Miller , Dong Yu
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , H01L31/0352 , H01L31/03529 , H01L51/0015 , H01L51/422 , H01L51/4253 , Y02E10/549
摘要： Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials including semiconducting metals and metal oxides (such as TiO2, CdSe, CdS, CdTe, or CuO) may be deposited into the pores of the porous template film. After deposition, the template film may be removed by controlled exposure to acid or base without disrupting the semiconducting material leaving behind a nanoscale network grid. Spaces in the network grid can then be filled with complementary semiconducting material, e.g., a semiconducting polymer or dye to create a exciton-splitting and charge transporting network with superior optoelectronic properties for an optoelectronic devices, particularly photovoltaic devices.
摘要翻译：用于光电子器件的电荷分束网络可以使用纳米结构多孔膜（例如SiO 2）作为模板来制造。多孔膜可以使用表面活性剂诱导技术制造。包括半导体金属和金属氧化物（例如TiO 2，CdSe，CdS，CdTe或CuO）的各种半导体材料中的任何一种可以沉积到多孔模板膜的孔中。沉积后，可以通过控制暴露于酸或碱而不破坏半导体材料留下纳米尺度网格来除去模板膜。然后可以用互补半导体材料（例如半导体聚合物或染料）填充网格中的空间，以产生具有用于光电子器件，特别是光伏器件的优异光电子性质的激子分裂和电荷传输网络。

3. 发明授权

US08178384B1 Interfacial architecture for nanostructured optoelectronic devices 失效
标题翻译：纳米结构光电子器件的界面结构
公开(公告)号：US08178384B1
公开(公告)日：2012-05-15
申请号：US12401238
申请日：2009-03-10
申请人： Martin R. Roscheisen , Brian M. Sager , Klaus Petritsch , Jacqueline Fidanza
发明人： Martin R. Roscheisen , Brian M. Sager , Klaus Petritsch , Jacqueline Fidanza
IPC分类号： H01L21/00
CPC分类号： B82Y10/00 , H01L51/0014 , H01L51/0047 , H01L51/424 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： An optoelectronic apparatus, a method for making the apparatus, and the use of the apparatus in an optoelectronic device are disclosed. The apparatus may include an active layer having a nanostructured network layer with a network of regularly spaced structures with spaces between neighboring structures. One or more network-filling materials are disposed in the spaces. At least one of the network-filling materials has complementary charge transfer properties with respect to the nanostructured network layer. An interfacial layer, configured to enhance an efficiency of the active layer, is disposed between the nanostructured network layer and the network-filling materials. The interfacial layer may be configured to provide (a) charge transfer between the two materials that exhibits different rates for forward versus backward transport; (b) differential light absorption to extend a range of wavelengths that the active layer can absorb; or (c) enhanced light absorption, which may be coupled with charge injection.
摘要翻译：公开了一种光电子装置，制造该装置的方法和该装置在光电装置中的应用。该装置可以包括具有纳米结构网络层的有源层，其具有在相邻结构之间具有间隔的规则间隔结构的网络。一个或多个网络填充材料设置在空间中。至少一种网络填充材料相对于纳米结构化网络层具有互补电荷转移性质。被配置为提高有源层的效率的界面层设置在纳米结构网络层和网络填充材料之间。界面层可以被配置为提供（a）两种材料之间的电荷转移，这些材料对于正向和反向传输具有不同的速率; （b）差分光吸收以延长有源层可以吸收的波长范围; 或（c）增强的光吸收，其可与电荷注入相结合。

4. 发明授权

US07511217B1 Inter facial architecture for nanostructured optoelectronic devices 失效
标题翻译：纳米结构光电子器件的面部构造
公开(公告)号：US07511217B1
公开(公告)日：2009-03-31
申请号：US10419708
申请日：2003-04-19
申请人： Martin R. Roscheisen , Brian M. Sager , Klaus Petritsch , Jacqueline Fidanza
发明人： Martin R. Roscheisen , Brian M. Sager , Klaus Petritsch , Jacqueline Fidanza
IPC分类号： H01L31/00
CPC分类号： B82Y10/00 , H01L51/0014 , H01L51/0047 , H01L51/424 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： An optoelectronic apparatus, a method for making the apparatus, and the use of the apparatus in an optoelectronic device are disclosed. The apparatus may include an active layer having a nanostructured network layer with a network of regularly spaced structures with spaces between neighboring structures. One or more network-filling materials are disposed in the spaces. At least one of the network-filling materials has complementary charge transfer properties with respect to the nanostructured network layer. An interfacial layer, configured to enhance an efficiency of the active layer, is disposed between the nanostructured network layer and the network-filling materials. The interfacial layer may be configured to provide (a) charge transfer between the two materials that exhibits different rates for forward versus backward transport; (b) differential light absorption to extend a range of wavelengths that the active layer can absorb; or (c) enhanced light absorption, which may be coupled with charge injection.
摘要翻译：公开了一种光电子装置，制造该装置的方法和该装置在光电装置中的应用。该装置可以包括具有纳米结构网络层的有源层，其具有在相邻结构之间具有间隔的规则间隔结构的网络。一个或多个网络填充材料设置在空间中。至少一种网络填充材料相对于纳米结构化网络层具有互补电荷转移性质。被配置为提高有源层的效率的界面层设置在纳米结构网络层和网络填充材料之间。界面层可以被配置为提供（a）两种材料之间的电荷转移，这些材料对于正向和反向传输具有不同的速率; （b）差分光吸收以延长有源层可以吸收的波长范围; 或（c）增强的光吸收，其可与电荷注入相结合。

5. 发明授权

US07645934B1 Nanostructured layer and fabrication methods 失效
标题翻译：纳米结构层和制造方法
公开(公告)号：US07645934B1
公开(公告)日：2010-01-12
申请号：US10427749
申请日：2003-04-29
申请人： Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
发明人： Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
IPC分类号： H01L31/00 , B29C65/00 , B32B3/26
CPC分类号： H01L31/036 , H01L31/0203 , H01L31/04 , H01L31/048 , H01L31/0481 , Y02E10/50 , Y10T428/249953
摘要： Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.
摘要翻译：公开了具有间隔10-50nm的10nm至50nm孔的纳米结构层，制造这种纳米结构层的方法，具有这种纳米结构层的光电子器件以及用于这种纳米结构层的纳米结构层。纳米结构层可以使用通常包括一种或多种共价金属络合物，一种或多种表面活性剂，溶剂，一种或多种任选的缩合抑制剂和（任选的）水的前体溶胶形成。从前体溶胶蒸发溶剂形成表面活性剂模板的膜。共价交联表面活性剂模板的膜形成纳米结构多孔层。例如通过适当的溶剂浓度，选择表面活性剂，使用螯合剂，使用溶胀剂或这些的组合来控制孔径。

6. 发明授权

US07663057B2 Solution-based fabrication of photovoltaic cell 失效
标题翻译：光伏电池基于解决方案的制造
公开(公告)号：US07663057B2
公开(公告)日：2010-02-16
申请号：US10782017
申请日：2004-02-19
申请人： Dong Yu , Jacqueline Fidanza , Martin R. Roscheisen , Brian M. Sager
发明人： Dong Yu , Jacqueline Fidanza , Martin R. Roscheisen , Brian M. Sager
IPC分类号： H01L31/00 , B05D7/00 , B05D3/02 , C09D1/00
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
摘要翻译：公开了一种用于形成CIGS光伏电池有源层的墨水以及用于制造墨水的方法，制备活性层的方法和由活性层制成的太阳能电池。油墨含有IB，IIIA和（任选地）VIA组分的纳米颗粒的混合物。颗粒的直径在约1nm至约500nm之间的所需粒度范围，其中大部分颗粒的质量包括尺寸不超过平均粒度的约40％或以下的颗粒，或如果平均粒度小于约5纳米，高于或低于平均粒度的不超过约2纳米。使用这种墨水避免了在构建光伏电池期间将材料暴露于H 2 Se气体的需要，并且允许在膜退火期间更均匀的熔融，更均匀的纳米颗粒的混合，并且允许形成更高质量的吸收膜。

7. 发明授权

US06946597B2 Photovoltaic devices fabricated by growth from porous template 失效
标题翻译：通过从多孔模板生长制造的光伏器件
公开(公告)号：US06946597B2
公开(公告)日：2005-09-20
申请号：US10443456
申请日：2003-05-21
申请人： Brian M. Sager , Martin R. Roscheisen , Klus Petritsch , Karl Pichler , Jacqueline Fidanza , Dong Yu
发明人： Brian M. Sager , Martin R. Roscheisen , Klus Petritsch , Karl Pichler , Jacqueline Fidanza , Dong Yu
IPC分类号： H01L20060101 , H01L31/00 , H01L31/0256 , H01L31/0352 , H01L31/042 , H01L31/18
CPC分类号： H01L51/4213 , H01L51/0036 , H01L51/0037 , H01L51/422 , H01L51/4253 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture where two more materials having different electron affinities are regularly arrayed such that their presence alternates within distances of between about 1 nm and about 100 nm. The materials are present in a matrix based on a porous template with an array of template pores. The porous template is formed by anodizing a layer of metal. A photovoltaic device may include such a porous template disposed between a base electrode and a transparent conducting electrode. A first charge-transfer material fills the template pores, A second (complementary) charge-transfer material fills additional space not occupied by the first charge-transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征可以在于其中两个具有不同电子亲和力的材料被规则排列的结构，使得它们的存在在约1nm和约100nm之间的距离内交替。该材料基于具有模板孔阵列的多孔模板存在于基质中。通过阳极氧化一层金属形成多孔模板。光伏器件可以包括设置在基极和透明导电电极之间的这种多孔模板。第一电荷转移材料填充模板孔。第二（互补）电荷转移材料填充未被第一电荷转移材料占据的附加空间。

8. 发明授权

US08257788B2 Nanostructured layer and fabrication methods 失效
标题翻译：纳米结构层和制造方法
公开(公告)号：US08257788B2
公开(公告)日：2012-09-04
申请号：US12643565
申请日：2009-12-21
申请人： Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
发明人： Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
IPC分类号： B05D5/00
CPC分类号： H01L31/036 , H01L31/0203 , H01L31/04 , H01L31/048 , H01L31/0481 , Y02E10/50 , Y10T428/249953
摘要： Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.
摘要翻译：公开了具有间隔10-50nm的10nm至50nm孔的纳米结构层，制造这种纳米结构层的方法，具有这种纳米结构层的光电子器件以及用于这种纳米结构层的纳米结构层。纳米结构层可以使用通常包括一种或多种共价金属络合物，一种或多种表面活性剂，溶剂，一种或多种任选的缩合抑制剂和（任选的）水的前体溶胶形成。从前体溶胶蒸发溶剂形成表面活性剂模板的膜。共价交联表面活性剂模板的膜形成纳米结构多孔层。例如通过适当的溶剂浓度，选择表面活性剂，使用螯合剂，使用溶胀剂或这些的组合来控制孔径。

9. 发明申请

US20100166954A1 Nanostructured Layer and Fabrication Methods 失效
标题翻译：纳米结构层和制备方法
公开(公告)号：US20100166954A1
公开(公告)日：2010-07-01
申请号：US12643565
申请日：2009-12-21
申请人： Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
发明人： Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
IPC分类号： B05D5/00
CPC分类号： H01L31/036 , H01L31/0203 , H01L31/04 , H01L31/048 , H01L31/0481 , Y02E10/50 , Y10T428/249953
摘要： Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.
摘要翻译：公开了具有间隔10-50nm的10nm至50nm孔的纳米结构层，制造这种纳米结构层的方法，具有这种纳米结构层的光电子器件以及用于这种纳米结构层的纳米结构层。纳米结构层可以使用通常包括一种或多种共价金属络合物，一种或多种表面活性剂，溶剂，一种或多种任选的缩合抑制剂和（任选的）水的前体溶胶形成。从前体溶胶蒸发溶剂形成表面活性剂模板的膜。共价交联表面活性剂模板的膜形成纳米结构多孔层。例如通过适当的溶剂浓度，选择表面活性剂，使用螯合剂，使用溶胀剂或这些的组合来控制孔径。

10. 发明授权

US07247346B1 Combinatorial fabrication and high-throughput screening of optoelectronic devices 有权
标题翻译：光电子器件的组合制作和高通量筛选
公开(公告)号：US07247346B1
公开(公告)日：2007-07-24
申请号：US10426242
申请日：2003-04-28
申请人： Brian M. Sager , Martin R. Roscheisen , Klaus Petritsch
发明人： Brian M. Sager , Martin R. Roscheisen , Klaus Petritsch
IPC分类号： B05D5/06
CPC分类号： G01R31/307 , H01L27/307 , H01L51/0004 , H01L51/0005 , H01S5/0014 , Y02E10/549
摘要： Methods and apparatus for the rapid and parallel synthesis of optoelectronic cell devices and for the high-throughput screening of such devices for useful properties are disclosed. The methods comprise the parallel synthesis of arrays of optoelectronic devices fabricated within an addressable sample-holding matrix. Each optoelectronic device is created and tested within an addressable sample-holder in the fabrication device.
摘要翻译：公开了用于快速和平行合成光电子电池器件的方法和装置以及用于这种器件的高通量筛选以用于有用的特性。该方法包括在可寻址样品保持基质内制备的光电器件阵列的并行合成。在制造装置中的可寻址样品架内创建和测试每个光电子器件。

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