专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080087878A1 USE OF PERYLENE DIIMIDE DERIVATIVES AS AIR-STABLE N-CHANNEL ORGANIC SEMICONDUCTORS 审中-公开
标题翻译：将亚乙基二胺衍生物用作空气稳定的N-通道有机半导体
公开(公告)号：US20080087878A1
公开(公告)日：2008-04-17
申请号：US11550250
申请日：2006-10-17
申请人： Martin KOENEMANN , Peter Erk , Marcos Gomez , Zhenan Bao , Mang-Mangike (Mike) Ling
发明人： Martin KOENEMANN , Peter Erk , Marcos Gomez , Zhenan Bao , Mang-Mangike (Mike) Ling
IPC分类号： H01L29/08 , C07D471/02 , H01L51/40
CPC分类号： H01L51/0053 , C07D471/06 , C09B5/62 , C09B57/08 , H01L51/001 , H01L51/0545 , Y02E10/549
摘要： The present invention relates to the use of of perylene diimide derivatives as air-stable n-type organic semiconductors.
摘要翻译：本发明涉及苝二酰亚胺衍生物作为空气稳定的n型有机半导体的用途。

2. 发明申请

US20080054258A1 USE OF PERYLENE DIIMIDE DERIVATIVES AS AIR-STABLE N-CHANNEL ORGANIC SEMICONDUCTORS 审中-公开
标题翻译：将亚乙基二胺衍生物用作空气稳定的N-通道有机半导体
公开(公告)号：US20080054258A1
公开(公告)日：2008-03-06
申请号：US11835006
申请日：2007-08-07
申请人： Martin KOENEMANN , Peter Erk , Marcos Gomez , Zhenan Bao , Mang-Mang Ling
发明人： Martin KOENEMANN , Peter Erk , Marcos Gomez , Zhenan Bao , Mang-Mang Ling
IPC分类号： H01L29/786 , C07D471/22 , H01L51/00
CPC分类号： H01L51/0053 , C09B5/62 , H01L27/283 , H01L51/0529 , H01L51/0545 , H01L51/0558 , H01L51/424 , H01L51/5012 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to the use of perylene diimide derivatives as air-stable n-type organic semiconductors.
摘要翻译：本发明涉及苝二酰亚胺衍生物作为空气稳定的n型有机半导体的用途。

3. 发明申请

US20080009092A1 Use of chlorinated copper phthalocyanines as air-stable n-channel organic semiconductors 审中-公开
标题翻译：使用氯化铜酞菁作为空气稳定的n沟道有机半导体
公开(公告)号：US20080009092A1
公开(公告)日：2008-01-10
申请号：US11480879
申请日：2006-07-06
申请人： Martin Koenemann , Peter Erk , Marcos Gomez , Mang-Mang Ling , Zhenan Bao
发明人： Martin Koenemann , Peter Erk , Marcos Gomez , Mang-Mang Ling , Zhenan Bao
IPC分类号： H01L51/40
CPC分类号： H01L51/0078 , C09B47/045 , C09B47/061 , C09B47/0671 , C09B47/10 , C09B67/0096 , H01L51/0545 , H01L51/50 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to the use of chlorinated copper phthalocyanines as air-stable n-type organic semiconductors.
摘要翻译：本发明涉及氯化铜酞菁作为空气稳定型n型有机半导体的用途。

4. 发明授权

US07795145B2 Patterning crystalline compounds on surfaces 失效
标题翻译：在表面上形成结晶化合物
公开(公告)号：US07795145B2
公开(公告)日：2010-09-14
申请号：US11353934
申请日：2006-02-15
申请人： Marcos Gomez , Peter Erk , Frauke Richter , Zhenan Bao , Shuhong Liu
发明人： Marcos Gomez , Peter Erk , Frauke Richter , Zhenan Bao , Shuhong Liu
IPC分类号： H01L21/44
CPC分类号： H01L51/0003 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L51/0019 , H01L51/0068 , H01L51/0533 , H01L51/0545
摘要： A method of patterning the surface of a substrate with at least one organic semiconducting compound including: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern contiguous with a stamping surface and defining a stamping pattern, (b) coating the stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with the stamping surface to allow deposition of the compound (C1) on the substrate, (d) removing the stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to bind at least a portion of the applied crystallites to the binding sites on the surface of the substrate.
摘要翻译：一种利用至少一种有机半导体化合物对衬底的表面进行图案化的方法，包括：（a）提供具有表面的印模，所述表面包括形成在其中的多个凹口，所述压痕限定与冲压表面邻接的压痕图案并限定冲压图案（ b）用至少一种能够结合到基底表面的化合物（C1）和至少一种有机半导体化合物（S）涂覆冲压表面，（c）将基底表面的至少一部分与冲压表面以允许化合物（C1）沉积在基底上，（d）去除冲压表面以在基底表面上提供结合位点的图案，（e）施加多个有机半导体化合物的微晶（ S）到基底的表面以将至少一部分施加的微晶结合到基底表面上的结合位点。

5. 发明申请

US20080090325A1 METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
标题翻译：用于生产有机场效应晶体管的方法
公开(公告)号：US20080090325A1
公开(公告)日：2008-04-17
申请号：US11550229
申请日：2006-10-17
申请人： Martin KOENEMANN , Peter Erk , Zhenan Bao , Mang Mang Ling
发明人： Martin KOENEMANN , Peter Erk , Zhenan Bao , Mang Mang Ling
IPC分类号： H01L51/40 , C07D471/02 , C07D471/22
CPC分类号： C07D493/06 , C07D471/06 , H01L27/283 , H01L51/0053 , H01L51/0545
摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.
摘要翻译：一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到栅极结构，源电极和漏电极所在的衬底的区域，其中n型有机半导体化合物选自式I化合物，其中R 1， R 2，R 3和R 4独立地是氢，氯或溴，条件是这些基团中的至少一个不是氢，Y 1是O或NR a，其中R a是氢或有机残基，Y 2，是O或NR b，其中R b是氢或有机残基，Z 1，Z 2， Z 3和Z 4是O，其中，在Y 1是NR a a的情况下，残基Z 1和Z 2中的一个可以是NR c，其中R a，另一方面，在末端键之间具有2〜5个原子的桥连基团，其中，在Y 2的情况下，NR 2是其中之一，残基Z 3和Z 4可以是NR d D基团，其中R b和R 4都是一起是在末端键之间具有2至5个原子的桥连基团。

6. 发明申请

US20080017850A1 METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权
公开(公告)号：US20080017850A1
公开(公告)日：2008-01-24
申请号：US11744611
申请日：2007-05-04
申请人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
发明人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
IPC分类号： H01L51/30 , C07D471/08 , H01L51/40 , C07D471/22
CPC分类号： H01L51/0053 , C07D471/06 , C07D471/16 , C07D493/06 , H01L27/283 , H01L51/0545 , H01L51/0558
摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

7. 发明申请

US20080035914A1 Use of perylene diimide derivatives as air-stable n-channel organic semiconductors 审中-公开
标题翻译：苝二酰亚胺衍生物用作空气稳定的n型有机半导体
公开(公告)号：US20080035914A1
公开(公告)日：2008-02-14
申请号：US11502544
申请日：2006-08-11
申请人： Martin Konemann , Peter Erk , Marcos Gomez , Zhenan Bao
发明人： Martin Konemann , Peter Erk , Marcos Gomez , Zhenan Bao
IPC分类号： H01L51/00 , C07D471/02
CPC分类号： H01L51/0053 , C07D471/06 , C09B5/62 , H01L51/0025 , H01L51/0525 , H01L51/0545 , Y02E10/549
摘要： The present invention relates to the use of perylene diimide derivatives as air-stable n-type organic semiconductors.
摘要翻译：本发明涉及苝二酰亚胺衍生物作为空气稳定的n型有机半导体的用途。

8. 发明授权

US07910736B2 Method for producing organic field-effect transistors 有权
标题翻译：制造有机场效应晶体管的方法
公开(公告)号：US07910736B2
公开(公告)日：2011-03-22
申请号：US11744611
申请日：2007-05-04
申请人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
发明人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
IPC分类号： C07D471/02 , H01L51/50 , H01L31/112
CPC分类号： H01L51/0053 , C07D471/06 , C07D471/16 , C07D493/06 , H01L27/283 , H01L51/0545 , H01L51/0558
摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3and R4are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.
摘要翻译：一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到所述栅极结构，所述源极电极和所述漏电极所在的衬底的区域，其中所述n型有机半导体化合物选自由式I化合物组成的组，其中R 1，R 2，R 3和R 4独立地为氢，氯或溴，条件是这些基团中的至少一个不是氢，Y1是O或NRa，其中Ra是氢或有机残基，Y2是O或NRb，其中Rb是氢或有机残基，Z1， Z2，Z3和Z4是O，其中在Y1是NRa的情况下，残基Z1和Z2之一可以是NRc基团，其中R a和R c一起是在末端键之间具有2至5个原子的桥连基团，其中，在Y2为NRb的情况下，残基Z3和Z4之一可以是NRd基团，其中Rb和Rd一起是在末端键之间具有2至5个原子的桥连基团。

9. 发明申请

US20070269924A1 Patterning nanowires on surfaces for fabricating nanoscale electronic devices 审中-公开
标题翻译：在纳米级电子器件制造表面上形成纳米线
公开(公告)号：US20070269924A1
公开(公告)日：2007-11-22
申请号：US11435886
申请日：2006-05-18
申请人： Marcos Gomez , Frauke Richter , Peter Erk , Zhenan Bao , Shuhong Liu
发明人： Marcos Gomez , Frauke Richter , Peter Erk , Zhenan Bao , Shuhong Liu
IPC分类号： H01L21/44
CPC分类号： H01L51/0004 , B81C1/0038 , H01L51/0036 , H01L51/0508
摘要： The present invention relates to a method of depositing nanowires on the surface of a substrate, comprising the steps of: contacting defined regions of the substrate with at least one compound (C1) capable of binding to the surface of the substrate and of binding the nanowires to provide a pattern of binding sites on the surface of the substrate and/or contacting defined regions of the substrate with at least one compound (C2) capable of binding to the surface of the substrate and preventing the binding of nanowires to provide a pattern of non-binding sites on the surface of the substrate, and contacting the surface of the substrate with a suspension of nanowires in a liquid medium to enable at least a portion of the applied nanowires to bind to at least a portion of the surface of the substrate covered with (C1) and/or not covered with (C2).
摘要翻译：本发明涉及一种在衬底的表面上沉积纳米线的方法，包括以下步骤：将限定的衬底区域与至少一种能够结合衬底表面并结合纳米线的化合物（C1）接触以在衬底的表面上提供结合位点的图案和/或使衬底的限定区域与至少一种能够结合衬底表面的化合物（C2）接触并防止纳米线结合以提供图案在衬底的表面上的非结合位点，以及使衬底的表面与液体介质中的纳米线的悬浮液接触，以使至少一部分所施加的纳米线结合至衬底的至少一部分表面覆盖（C1）和/或未覆盖（C2）。

10. 发明申请

US20070190783A1 Patterning crystalline compounds on surfaces 失效
标题翻译：在表面上形成结晶化合物
公开(公告)号：US20070190783A1
公开(公告)日：2007-08-16
申请号：US11353934
申请日：2006-02-15
申请人： Marcos Gomez , Peter Erk , Frauke Richter , Zhenan Bao , Shuhong Liu
发明人： Marcos Gomez , Peter Erk , Frauke Richter , Zhenan Bao , Shuhong Liu
IPC分类号： H01L21/44
CPC分类号： H01L51/0003 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L51/0019 , H01L51/0068 , H01L51/0533 , H01L51/0545
摘要： A method of patterning the surface of a substrate with at least one organic semiconducting compound, comprising the steps of: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern, said indentations being contiguous with a stamping surface and defining a stamping pattern, (b) coating said stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and of binding at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with said stamping surface to allow deposition of said compound (C1) on the substrate, (d) removing said stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to enable at least a portion of the applied crystallites to bind to at least a portion of the binding sites on the surface of the substrate.
摘要翻译：一种利用至少一种有机半导体化合物对衬底表面进行图案化的方法，包括以下步骤：（a）提供具有表面的印模，所述印模具有形成在其中的多个凹口，所述凹陷限定凹陷图案，所述压痕与冲压表面和限定冲压图案，（b）用至少一种能够结合至基材表面并结合至少一种有机半导体化合物（S）的化合物（C1）涂覆所述冲压表面，（c）至少接触具有所述冲压表面的衬底的表面的一部分，以允许将所述化合物（C1）沉积在衬底上，（d）去除所述冲压表面以提供衬底表面上的结合位点图案，（e）施加多个微晶的有机半导体化合物（S）到基底的表面，使得至少一部分所施加的微晶能够结合至少一部分结合物基材表面的部位。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式