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1. 发明授权

US06177353B1 Metallization etching techniques for reducing post-etch corrosion of metal lines 有权
标题翻译：用于减少金属线蚀刻后腐蚀的金属化蚀刻技术
公开(公告)号：US06177353B1
公开(公告)日：2001-01-23
申请号：US09153390
申请日：1998-09-15
申请人： Martin Gutsche , Peter Strobl , Stephan Wege , Eike Lueken , Georg Stojakovic , Bruno Spuler
发明人： Martin Gutsche , Peter Strobl , Stephan Wege , Eike Lueken , Georg Stojakovic , Bruno Spuler
IPC分类号： H01L21027
CPC分类号： H01L21/02071 , H01L21/32136 , H01L21/32139
摘要： A method for reducing polymer deposition on vertical surfaces of metal lines etched from a metallization layer disposed above a substrate. The method includes forming a hard mask layer above the metallization layer and providing a photoresist mask above the hard mask layer. The method further includes employing the photoresist mask to form a hard mask from the hard mask layer. The hard mask has patterns therein configured to form the metal lines in a subsequent plasma-enhanced metallization etch. There is also included removing the photoresist mask. Additionally, there is included performing the plasma-enhanced metallization etch employing the hard mask and an etchant source gas that includes Cl2 and at least one passivation-forming chemical, wherein the plasma-enhanced metallization etch is performed without employing photoresist to reduce the polymer deposition during the plasma-enhanced metallization etch.
摘要翻译：一种用于减少从设置在基板上方的金属化层蚀刻的金属线的垂直表面上的聚合物沉积的方法。该方法包括在金属化层之上形成硬掩模层，并在硬掩模层之上提供光刻胶掩模。该方法还包括使用光致抗蚀剂掩模从硬掩模层形成硬掩模。硬掩模具有其中的图案，其配置成在随后的等离子体增强金属化蚀刻中形成金属线。还包括去除光刻胶掩模。另外，包括使用硬掩模和包括Cl 2和至少一种钝化形成化学品的蚀刻剂源气体进行等离子体增强的金属化蚀刻，其中在不使用光致抗蚀剂的情况下执行等离子体增强金属化蚀刻以减少聚合物沉积在等离子体增强的金属化蚀刻期间。

2. 发明授权

US07846846B2 Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls 失效
标题翻译：通过处理形成在开口侧壁上的聚合物来防止在高纵横比开口中的蚀刻轮廓弯曲和弯曲的方法
公开(公告)号：US07846846B2
公开(公告)日：2010-12-07
申请号：US11861032
申请日：2007-09-25
申请人： Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
发明人： Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32137 , H01J37/32449 , H01L21/76802
摘要： High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment carried out periodically during the etch process.
摘要翻译：通过在每个接触开口的侧壁上形成高导电性薄膜来蚀刻高纵横比接触开口，同时防止蚀刻轮廓弯曲或弯曲。通过在蚀刻工艺期间周期性地进行的离子轰击，增强了侧壁上薄膜的导电性。

3. 发明申请

US20090033362A1 Method for Forming a Structure on a Substrate and Device 失效
标题翻译：在基板和设备上形成结构的方法
公开(公告)号：US20090033362A1
公开(公告)日：2009-02-05
申请号：US11831504
申请日：2007-07-31
申请人： Dirk Manger , Stephan Wege , Rolf Weis , Christoph Noelscher
发明人： Dirk Manger , Stephan Wege , Rolf Weis , Christoph Noelscher
IPC分类号： H01R43/00 , H01L21/02 , H01L21/31
CPC分类号： H01L21/266 , H01L21/0332 , H01L21/0337 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/32135 , H01L21/32137 , H01L21/32139
摘要： In one aspect, a method of forming a structure on a substrate is disclosed. For example, the method includes forming a first mask layer and a second mask layer, modifying a material property in regions of the first and second mask layers, and forming the structure based on the modified regions.
摘要翻译：一方面，公开了一种在衬底上形成结构的方法。例如，该方法包括形成第一掩模层和第二掩模层，改变第一和第二掩模层的区域中的材料特性，以及基于改质区域形成结构。

4. 发明申请

US20070111339A1 Apparatus for processing a substrate 失效
标题翻译：用于处理衬底的装置
公开(公告)号：US20070111339A1
公开(公告)日：2007-05-17
申请号：US11273244
申请日：2005-11-14
申请人： Stephan Wege , Roger-Michael Wolf
发明人： Stephan Wege , Roger-Michael Wolf
IPC分类号： H01L21/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642
摘要： An apparatus includes a plasma process chamber and a support element capable of supporting a substrate inside the plasma process chamber. At least one plasma control element is placed adjacent to a peripheral portion of the support element such that the plasma control element is capable of influencing a plasma inside the plasma process chamber if an electric field is applied thereto. At least one voltage generator is connected to the plasma control element. The plasma control element is movable inside the process chamber such that it can be set to any of at least two different positions.
摘要翻译：一种装置包括等离子体处理室和能够支撑等离子体处理室内的基板的支撑元件。至少一个等离子体控制元件被放置成与支撑元件的周边部分相邻，使得等离子体控制元件能够影响等离子体处理室内的等离子体，如果对其施加电场。至少一个电压发生器连接到等离子体控制元件。等离子体控制元件可以在处理室内移动，使得其可以被设置为至少两个不同位置中的任何一个。

5. 发明授权

US06897155B2 Method for etching high-aspect-ratio features 失效
标题翻译：蚀刻高纵横比特征的方法
公开(公告)号：US06897155B2
公开(公告)日：2005-05-24
申请号：US10219885
申请日：2002-08-14
申请人： Ajay Kumar , Anisul H. Khan , Dragan Podlesnik , Sharma V. Pamarthy , Axel Henke , Stephan Wege , Virinder Grewal
发明人： Ajay Kumar , Anisul H. Khan , Dragan Podlesnik , Sharma V. Pamarthy , Axel Henke , Stephan Wege , Virinder Grewal
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/461
CPC分类号： H01J37/32082 , H01J2237/3347 , H01L21/3065 , H01L21/30655
摘要： A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.
摘要翻译：一种用于操作等离子体反应器以蚀刻真空室中的工件上的高纵横比特征的方法。该方法包括执行闪光处理之后的蚀刻工艺。在蚀刻工艺期间，将第一气体供应到真空室中，并且第一气体的等离子体保持第一时间段。第一气体的等离子体包括蚀刻剂和钝化物质。在闪蒸过程中，将包含沉积物去除气体的第二气体供应到真空室中，并且将第二气体的等离子体保持第二时间段。在第二时间段期间，工件与第二气体的等离子体之间的直流电压明显小于在第一时间段内第一气体的工件和等离子体之间的直流电压。

6. 发明授权

US06511918B2 Method of structuring a metal-containing layer 有权
公开(公告)号：US06511918B2
公开(公告)日：2003-01-28
申请号：US09873229
申请日：2001-06-04
申请人： Stephan Wege , Kerstin Krahl
发明人： Stephan Wege , Kerstin Krahl
IPC分类号： H01L21302
CPC分类号： H01L21/32136 , H01L21/31122
摘要： The processes allow structuring of a metal-containing layer. The metal-containing layer is etched, using an etching mask, in a plasma-assisted etching gas atmosphere at a temperature of over 130° C. and in the presence of at least one halogen compound and at least one oxidizing agent. The concentration of the oxidizing agent is thereby set higher than the concentration of the halogen compound.

7. 发明申请

US20100330805A1 METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE 审中-公开
标题翻译：在基板上形成高比例特征的方法
公开(公告)号：US20100330805A1
公开(公告)日：2010-12-30
申请号：US11934589
申请日：2007-11-02
申请人： KENNY LINH DOAN , Kathryn Keswick , Subhash Deshmukh , Stephan Wege , Wonseok Lee
发明人： KENNY LINH DOAN , Kathryn Keswick , Subhash Deshmukh , Stephan Wege , Wonseok Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/31116 , H01L21/31144
摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios. In one embodiment, a method for anisotropic etching a dielectric layer on a substrate includes providing a substrate having a patterned mask layer disposed on a dielectric layer in an etch chamber, supplying a gas mixture including at least a fluorine and carbon containing gas and a silicon fluorine gas into the etch chamber, and etching features in the dielectric layer in the presence of a plasma formed from the gas mixture.
摘要翻译：提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。本文所述的方法有利地有利于具有高纵横比的特征的轮廓和尺寸控制。在一个实施例中，用于各向异性蚀刻衬底上的电介质层的方法包括提供具有设置在蚀刻室中的电介质层上的图案化掩模层的衬底，提供至少包含含氟和含碳气体的气体混合物和硅氟气进入蚀刻室，并且在由气体混合物形成的等离子体的存在下蚀刻介电层中的特征。

8. 发明授权

US07737049B2 Method for forming a structure on a substrate and device 失效
标题翻译：在基板和装置上形成结构的方法
公开(公告)号：US07737049B2
公开(公告)日：2010-06-15
申请号：US11831504
申请日：2007-07-31
申请人： Dirk Manger , Stephan Wege , Rolf Weis , Christoph Noelscher
发明人： Dirk Manger , Stephan Wege , Rolf Weis , Christoph Noelscher
IPC分类号： H01R43/00 , H01L21/02 , H01L21/31
CPC分类号： H01L21/266 , H01L21/0332 , H01L21/0337 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/32135 , H01L21/32137 , H01L21/32139
摘要： In one aspect, a method of forming a structure on a substrate is disclosed. For example, the method includes forming a first mask layer and a second mask layer, modifying a material property in regions of the first and second mask layers, and forming the structure based on the modified regions.
摘要翻译：一方面，公开了一种在衬底上形成结构的方法。例如，该方法包括形成第一掩模层和第二掩模层，改变第一和第二掩模层的区域中的材料特性，以及基于改质区域形成结构。

9. 发明申请

US20090127722A1 Method for Processing a Spacer Structure, Method of Manufacturing an Integrated Circuit, Semiconductor Device and Intermediate Structure with at Least One Spacer Structure 审中-公开
标题翻译：用于处理间隔结构的方法，制造集成电路的方法，具有至少一个间隔结构的半导体器件和中间结构
公开(公告)号：US20090127722A1
公开(公告)日：2009-05-21
申请号：US11943445
申请日：2007-11-20
申请人： Christoph Noelscher , Ulrich Egger , Rolf Weis , Stephan Wege , Burkhard Ludwig
发明人： Christoph Noelscher , Ulrich Egger , Rolf Weis , Stephan Wege , Burkhard Ludwig
IPC分类号： H01L23/544 , H01L21/306
CPC分类号： H01L21/0337 , B81C1/00111 , H01L21/0334 , H01L21/31144
摘要： Method for processing at least one spacer structure in a manufacturing process of a semiconductor device, wherein the at least one spacer structure is subjected to at least one etch process step with an isotropic component and the spacer structure comprises at least one point on the surface with a large solid angle opening towards the environment. Method of manufacturing an integrated circuit, including a regional removal of a spacer structure, wherein the removal is determined by a pattern density in the vicinity of the spacer structure.
摘要翻译：用于在半导体器件的制造工艺中处理至少一个间隔结构的方法，其中所述至少一个间隔结构经受至少一个具有各向同性组分的蚀刻工艺步骤，并且所述间隔物结构包括在所述表面上的至少一个点，朝向环境开放的大立体角。制造集成电路的方法，包括间隔结构的局部去除，其中去除由间隔结构附近的图案密度确定。

10. 发明申请

US20080090101A1 Method of preparing a coating solution and a corresponding use of the coating solution for coating a substrate 有权
标题翻译：制备涂布溶液的方法以及用于涂布基材的涂布溶液的相应用途
公开(公告)号：US20080090101A1
公开(公告)日：2008-04-17
申请号：US11582239
申请日：2006-10-17
申请人： Andreas Klipp , Stephan Wege , Tobias Mayer-Uhma , Cornelia Klein , Alexander Michaelis , Falko Schlenkrich
发明人： Andreas Klipp , Stephan Wege , Tobias Mayer-Uhma , Cornelia Klein , Alexander Michaelis , Falko Schlenkrich
IPC分类号： B05D3/12 , B05D3/02 , C09K17/40 , H01L21/316 , C23C16/40 , C01B25/00
CPC分类号： H01L21/02282 , H01L21/02178 , H01L21/02189 , H01L21/316
摘要： A method of preparing a coating solution, comprising the steps of providing a first solution comprising a lower alcohol; a polyethylene glycol; a complexing agent; and water; providing a second solution comprising a higher alcohol; and at least one metal alkoxide, wherein the metal in said at least one metal alkoxide is selected from the group consisting of zirconium, aluminium, titanium, tantalum and yttrium; forming a sol-gel solution by mixing said first and second solutions and thereby hydrolyzing said at least one metal alkoxide to a metal oxide and an alcohol; forming a concentrated solution by removing said lower alcohol and the alcohol resulting from the hydrolysis of said at least one metal alkoxide; and forming a coating solution by adding a medium alcohol to said concentrated solution.
摘要翻译：一种制备涂布溶液的方法，包括以下步骤：提供包含低级醇的第一溶液; 聚乙二醇; 络合剂和水; 提供包含高级醇的第二溶液; 和至少一种金属醇盐，其中所述至少一种金属醇盐中的金属选自锆，铝，钛，钽和钇; 通过混合所述第一和第二溶液形成溶胶 - 凝胶溶液，从而将所述至少一种金属醇盐水解成金属氧化物和醇; 通过除去由所述至少一种金属醇盐的水解产生的所述低级醇和醇形成浓缩溶液; 以及通过向所述浓缩溶液中加入中等醇形成涂布溶液。

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