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1. 发明授权

US6096654A Gapfill of semiconductor structure using doped silicate glasses 失效
标题翻译：使用掺杂硅酸盐玻璃的半导体结构的填隙
公开(公告)号：US6096654A
公开(公告)日：2000-08-01
申请号：US942273
申请日：1997-09-30
申请人： Markus M. Kirchhoff , Matthias Ilg
发明人： Markus M. Kirchhoff , Matthias Ilg
IPC分类号： H01L21/316 , H01L21/762 , H01L21/768 , H01L23/522 , H01L21/302
CPC分类号： H01L21/76229 , H01L21/76837
摘要： Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.
摘要翻译：通过使用其底部中的掺杂剂浓度大于引起表面晶体生长的量的掺杂硅酸盐玻璃和其掺杂浓度较低的上部，使得全部掺杂剂掺杂硅酸盐玻璃的浓度低于引起表面晶体生长的浓度。

2. 发明授权

US6048475A Gapfill of semiconductor structure using doped silicate glasses 有权
公开(公告)号：US6048475A
公开(公告)日：2000-04-11
申请号：US407384
申请日：1999-09-28
申请人： Markus M. Kirchhoff , Matthias Ilg
发明人： Markus M. Kirchhoff , Matthias Ilg
IPC分类号： H01L21/316 , H01L21/762 , H01L21/768 , H01L23/522 , C03C17/00 , H01L21/302
CPC分类号： H01L21/76229 , H01L21/76837
摘要： Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.

3. 发明授权

US5866485A Techniques for etching a silicon dioxide-containing layer 失效
标题翻译：蚀刻含二氧化硅层的技术
公开(公告)号：US5866485A
公开(公告)日：1999-02-02
申请号：US939216
申请日：1997-09-29
申请人： Markus M. Kirchhoff , Jochen Hanebeck
发明人： Markus M. Kirchhoff , Jochen Hanebeck
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L27/10
CPC分类号： H01L21/31116
摘要： A method in a plasma processing chamber for improving oxide-to-nitride selectivity while etching a borophosphosilicate glass (BPSG)-containing layer to create a self-aligned contact on a semiconductor substrate. The (BPSG)-containing layer is disposed on a SiN layer and into a via formed through the SiN layer. The method includes placing the substrate into the plasma processing chamber, and flowing an etchant source gas into the plasma processing chamber. The etchant source gas includes C.sub.4 F.sub.8 and an additive gas other than carbon monoxide (CO). The additive gas includes molecules having both oxygen atoms and carbon atoms in a 1:1 ratio. The method further includes exciting the etchant source gas with a radio frequency (RF) power source having a frequency of 13.56 MHz to strike a plasma from the etchant source gas, thereby etching at least partially through the BPSG-containing layer.
摘要翻译：一种等离子体处理室中的方法，用于在蚀刻含有磷硅玻璃（BPSG）的层以在半导体衬底上产生自对准接触的同时提高氧化物到氮化物的选择性。（BPSG）层设置在SiN层上并通过SiN层形成。该方法包括将衬底放置到等离子体处理室中，并将蚀刻剂源气体流入等离子体处理室。蚀刻剂源气体包括C4F8和除一氧化碳（CO）之外的添加气体。添加气体包括以1:1的比例具有氧原子和碳原子的分子。该方法还包括用具有13.56MHz的频率的射频（RF）电源激发蚀刻剂源气体以从蚀刻剂源气体中冲击等离子体，从而至少部分地蚀刻通过含BPSG的层。

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