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    • 2. 发明授权
    • Bandwidth limited large signal IC amplifier stage
    • 带宽限制大信号IC放大器级
    • US4240042A
    • 1980-12-16
    • US027237
    • 1979-04-05
    • Thomas J. Robe
    • Thomas J. Robe
    • H03F1/08H03F1/26H03F3/19
    • H03F1/083
    • An amplifier stage is disclosed having junction capacitors for by-passing high frequency signals without introducing substantial signal nonlinearities. A pair of similar serially connected diodes are reverse biased between the amplifier supply potentials. The mid-point connection of the diodes is connected to the amplifier node to be by-passed paralleling the junction capacitances of the diodes with respect to a-c potential excursions. Typical diode capacitance variations resulting from changes in the reverse bias potential across a pn junction is minimized by this arrangement.
    • 公开了具有用于旁路高频信号的结电容器的放大器级,而不引入实质的信号非线性。 一对类似的串联二极管在放大器电源电位之间被反向偏置。 二极管的中点连接连接到放大器节点,以相对于a-c电位偏移平行地与二极管的结电容并联。 通过这种布置,通过pn结上的反向偏置电位的变化引起的典型的二极管电容变化被最小化。
    • 7. 发明授权
    • Radiation-hardened transistor amplifiers
    • 辐射硬化晶体管放大器
    • US4151483A
    • 1979-04-24
    • US878993
    • 1978-02-17
    • Thomas J. Robe
    • Thomas J. Robe
    • H03F3/45H03F3/50H03F3/08
    • H03F3/50H03F3/45089H03F3/45094
    • The transient photo-currents generated in the collector-base junction of an amplifier transistor responsive to transient ionizing radiation are counteracted by those similarly generated in an auxiliary p-n semiconductor junction in inverse-parallel connection with the emitter base junction of the amplifier transistor. To provide more perfect counteraction of these photo-currents, this auxiliary semiconductor junction, operated in reverse-bias, is matched in characteristics with the collector-base junction of the amplifier transistor, and the base-to-collector potential of the amplifier transistor is arranged to be substantially the same as the reverse-bias potential across the auxiliary semiconductor junction.
    • 响应于瞬态电离辐射的放大器晶体管的集电极 - 基极结中产生的瞬态光电流在与放大器晶体管的发射极基极并联连接的辅助p-n半导体结中类似地产生的那些相反。 为了提供这些光电流的更完美的对抗,以反向偏置工作的辅助半导体结与放大器晶体管的集电极 - 基极结的特性相匹配,放大器晶体管的基极 - 集电极电位为 被布置成与跨越辅助半导体结的反向偏置电位基本相同。
    • 8. 发明授权
    • Folded-cascode amplifier stages
    • 折叠共源共栅放大器级
    • US4151482A
    • 1979-04-24
    • US878883
    • 1978-02-17
    • Thomas J. Robe
    • Thomas J. Robe
    • H03F1/22H03F3/45H03F3/08
    • H03F3/45094H03F1/22
    • A folded-cascode amplifier conventionally comprises an "input" transistor of a first conductivity type receiving input signals at its base electrode, an "output" transistor of a second conductivity type, complementary to the first, connected in common-base amplifier configuration with its base electrode connected to receive fixed bias potential, and a current source supplying the combined "input" transistor collector current and "output" transistor emitter current to an interconnection between the "input" transistor collector electrode and "output" transistor emitter electrode. In the folded-cascode amplifiers herein disclosed the base electrode of the "output" transistor has the input-signal-responsive emitter potential of the "input" transistor applied to it.
    • 折叠共源共栅放大器通常包括在其基极处接收输入信号的第一导电类型的“输入”晶体管,第二导电类型的“输出”晶体管,与第一导通类型的第一连接的共基极放大器配置互补 基极连接以接收固定偏置电位,以及电流源,将组合的“输入”晶体管集电极电流和“输出”晶体管发射极电流提供给“输入”晶体管集电极和“输出”晶体管发射极之间的互连。 在本文公开的折叠共源共栅放大器中,“输出”晶体管的基极具有施加到其的“输入”晶体管的输入信号响应发射极电位。