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1. 发明申请

US20060023606A1 Ferroelectric probe storage apparatus 失效
标题翻译：铁电探针存储装置
公开(公告)号：US20060023606A1
公开(公告)日：2006-02-02
申请号：US10902910
申请日：2004-07-30
申请人： Mark Lutwyche , Earl Johns , Martin Forrester , Mark Bedillion , Andreas Roelofs , Joachim Ahner , Robert Rottmayer , Andre Liem , Edward Skalko , Xueshi Yang
发明人： Mark Lutwyche , Earl Johns , Martin Forrester , Mark Bedillion , Andreas Roelofs , Joachim Ahner , Robert Rottmayer , Andre Liem , Edward Skalko , Xueshi Yang
IPC分类号： G11B7/00
CPC分类号： G11B9/02
摘要： An apparatus comprises a ferroelectric storage medium, and a transducer for reading data from the ferroelectric storage medium and for writing data to the ferroelectric storage medium, wherein the transducer includes a substrate and a probe coupled to the substrate, wherein the probe includes a conductive element and a bilayer structure causing the probe to bend toward the ferroelectric storage medium.
摘要翻译：一种装置包括铁电存储介质和用于从铁电存储介质读取数据并将数据写入铁电存储介质的换能器，其中换能器包括基板和耦合到基板的探针，其中探针包括导电元件以及使探针朝向铁电存储介质弯曲的双层结构。

2. 发明申请

US20070041233A1 Wake-up of ferroelectric thin films for probe storage 审中-公开
标题翻译：用于探针存储的铁电薄膜的唤醒
公开(公告)号：US20070041233A1
公开(公告)日：2007-02-22
申请号：US11207863
申请日：2005-08-19
申请人： Andreas Roelofs , Martin Forrester , Joachim Ahner
发明人： Andreas Roelofs , Martin Forrester , Joachim Ahner
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223
摘要： A method for improving the stability of ferroelectric storage devices comprises: providing a ferroelectric storage medium including a film of ferroelectric material; and repeatedly applying a voltage to the film of ferroelectric material to improve the stability of polarized bits in the film of ferroelectric material. An apparatus that is used to perform the method is also provided.
摘要翻译：一种用于提高铁电存储装置的稳定性的方法包括：提供包括铁电材料膜的铁电存储介质; 并且重复地向铁电材料膜施加电压，以提高铁电材料膜中极化比特的稳定性。还提供了用于执行该方法的装置。

3. 发明授权

US07821808B2 Multilayer ferroelectric data storage system with regenerative read 有权
标题翻译：具有再生读数的多层铁电数据存储系统
公开(公告)号：US07821808B2
公开(公告)日：2010-10-26
申请号：US12363062
申请日：2009-01-30
申请人： Tong Zhao , Martin Gerard Forrester , Florin Zavaliche , Joachim Ahner
发明人： Tong Zhao , Martin Gerard Forrester , Florin Zavaliche , Joachim Ahner
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.
摘要翻译：数据存储系统包括第一和第二存储层，读取器和写入器。第一存储层具有第一矫顽电位和第一极化。第二存储层具有小于第一矫顽电位的第二矫顽电位和耦合到第一极化的第二极化。写入器执行写入操作，其中在第一和第二存储层上施加写入电位，使得跨越第一存储层超过第一矫顽电位，并且超过第二存储层超过第二矫顽电位。读取器执行其中在第一和第二存储层上施加读取电位的读取操作，使得跨越第二存储层超过第二矫顽电位，并且跨越第一存储层不超过第一矫顽电位。

4. 发明申请

US20060099462A1 Nano-scaled reactor for high pressure and high temperature chemical reactions and chemical ordering 审中-公开
标题翻译：用于高压和高温化学反应和化学排序的纳米级反应器
公开(公告)号：US20060099462A1
公开(公告)日：2006-05-11
申请号：US10982471
申请日：2004-11-05
申请人： Joachim Ahner , Nisha Shukla , Dieter Weller
发明人： Joachim Ahner , Nisha Shukla , Dieter Weller
IPC分类号： G11B5/706 , G11B5/65
CPC分类号： G11B5/855 , G11B5/70615
摘要： A storage device includes a storage medium, a controller and a read/write head. The storage medium includes a substrate with a plurality of nano-structures arranged in an ordered pattern on a surface of the substrate. The controller is coupled to the storage medium. The controller has a read structure that extends over the substrate and a positioner adapted to adjust a position of the read structure relative to the substrate. The read/write head is mounted on the read structure and positioned over the substrate during operation. The read/write head is adapted to read and to write information to and from the plurality of nano-structures.
摘要翻译：存储装置包括存储介质，控制器和读/写头。存储介质包括在衬底的表面上以有序图案排列的多个纳米结构的衬底。控制器耦合到存储介质。控制器具有在基板上延伸的读取结构和适于调整读取结构相对于基板的位置的定位器。读/写头安装在读结构上，并在操作期间定位在衬底上。读/写头适于读取和向多个纳米结构写入信息。

5. 发明申请

US20050285169A1 Memory array having a layer with electrical conductivity anisotropy 失效
标题翻译：具有导电各向异性层的存储器阵列
公开(公告)号：US20050285169A1
公开(公告)日：2005-12-29
申请号：US10879670
申请日：2004-06-29
申请人： Joachim Ahner , Jun Yu , Dieter Weller
发明人： Joachim Ahner , Jun Yu , Dieter Weller
IPC分类号： G11B9/02 , G11B9/04 , H01L29/76
CPC分类号： G11B9/02 , G11B9/04
摘要： A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.
摘要翻译：存储器阵列包括具有在第一和第二存储器层表面之间延伸的域轴的滞后域的存储器层。第一存储层表面上的导电层在厚度方向上具有各向异性增加的导电性。可移动导电探针在导电层上具有接触区域，并移动以接近选定的滞后区域。

6. 发明授权

US07916513B2 Non-destructive read back for ferroelectric data storage device 失效
标题翻译：用于铁电数据存储设备的无损回读
公开(公告)号：US07916513B2
公开(公告)日：2011-03-29
申请号：US12265418
申请日：2008-11-05
申请人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
IPC分类号： G11C11/22 , G11C11/24
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要： A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译：一种包括铁电体层，钙钛矿结构和至少一个传感器的数据存储装置，其中钙钛矿结构具有极性不连续性，其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压，并且其中至少一个传感器被配置为从钙钛矿结构读取电容电压。

7. 发明申请

US20100195369A1 MULTILAYER FERROELECTRIC DATA STORAGE SYSTEM WITH REGENERATIVE READ 有权
标题翻译：多层次电磁数据存储系统
公开(公告)号：US20100195369A1
公开(公告)日：2010-08-05
申请号：US12363062
申请日：2009-01-30
申请人： Tong Zhao , Martin Gerard Forrester , Florin Zavaliche , Joachim Ahner
发明人： Tong Zhao , Martin Gerard Forrester , Florin Zavaliche , Joachim Ahner
IPC分类号： G11C11/22 , G11C7/22
CPC分类号： G11C11/22
摘要： A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.
摘要翻译：数据存储系统包括第一和第二存储层，读取器和写入器。第一存储层具有第一矫顽电位和第一极化。第二存储层具有小于第一矫顽电位的第二矫顽电位和耦合到第一极化的第二极化。写入器执行写入操作，其中在第一和第二存储层上施加写入电位，使得跨越第一存储层超过第一矫顽电位，并且超过第二存储层超过第二矫顽电位。读取器执行其中在第一和第二存储层上施加读取电位的读取操作，使得跨越第二存储层超过第二矫顽电位，并且跨越第一存储层不超过第一矫顽电位。

8. 发明申请

US20100110754A1 NON-DESTRUCTIVE READ BACK FOR FERROELECTRIC DATA STORAGE DEVICE 失效
标题翻译：非破坏性回读用于电磁数据存储设备
公开(公告)号：US20100110754A1
公开(公告)日：2010-05-06
申请号：US12265418
申请日：2008-11-05
申请人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
IPC分类号： G11C11/22 , H01L27/115
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要： A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译：一种包括铁电体层，钙钛矿结构和至少一个传感器的数据存储装置，其中钙钛矿结构具有极性不连续性，其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压，并且其中至少一个传感器被配置为从钙钛矿结构读取电容电压。

9. 发明申请

US20060177705A1 Mass storage apparatus using fluorine mediated self-assembly monolayers of nanoparticles recording medium 失效
公开(公告)号：US20060177705A1
公开(公告)日：2006-08-10
申请号：US11055004
申请日：2005-02-09
申请人： Joachim Ahner , Nisha Shukla , Dieter Weller
发明人： Joachim Ahner , Nisha Shukla , Dieter Weller
IPC分类号： G11B5/66
CPC分类号： B82Y10/00 , B82Y30/00 , G11B5/65 , G11B5/732 , G11B5/7325 , G11B5/84
摘要： A magnetic recording medium for high-density recording, having a doped interlayer to preserve the uniformity and ordering of the magnetic nanoparticles in its recording layer. The interlayer is doped with a high electronegativity material. The dopant atoms in the interlayer interact with the ferromagnetic nanoparticles to promote the formation of a homogeneous, ordered monolayer of nanoparticles in the recording layer. In addition, the high electronegative property of the dopant atoms holds the nanoparticles in place during the subsequent annealing process to prevent sintering and disordering damage. In one embodiment, the dopant is a halogen or non-halogen material having a high electronegativity, which is not polymerized to the matrix material in the interlayer. The matrix material may be polymerized. An example of a doped interlayer is a fluorinated carbon film.

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