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1. 发明授权

US06432472B1 Method of making semiconductor supercapacitor system and articles produced therefrom 失效
标题翻译：制造半导体超级电容器系统及其制造的制品的方法
公开(公告)号：US06432472B1
公开(公告)日：2002-08-13
申请号：US09519264
申请日：2000-03-07
申请人： Mark Farrell , Harry Eugen Ruda , Yuichi Masaki
发明人： Mark Farrell , Harry Eugen Ruda , Yuichi Masaki
IPC分类号： B05D302
CPC分类号： C04B35/6264 , C04B35/468 , C04B35/4682 , C04B2235/3215 , C04B2235/3217 , C04B2235/3232 , C04B2235/3279 , C04B2235/3281 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/441 , C04B2235/444 , C04B2235/449 , C04B2235/658 , C04B2235/762 , C23C18/08 , C23C18/1216 , H01G4/1227
摘要： The invention relates to a nanostructured BaTiO3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, “M”, selected from Au, is Au, Cu, Ni3Al, Ru or InSn. The resulting titanate may be represented by the formula MdBaaTibOc wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of “M”.
摘要翻译：本发明涉及一种纳米结构的BaTiO3膜，板或阵列，其具有常规电容器的存储容量的1,000至10,000倍。钛酸钡具有式BaaTibOc，其中a和b独立地在0.75和1.25之间，c是2.5至约5.0。钛酸钡还可以掺杂有选自Au的“M”，为Au，Cu，Ni3Al，Ru或InSn。所得钛酸酯可以由式MdBaaTibOc表示，其中d为约0.01至0.25，a为约0.75至约1.25，b为约0.75至约1.25，c为约2.5至约5.0。 X射线衍射结果表明，薄膜的晶体结构从主要立方向变为四方晶相，微晶尺寸随“M”浓度的增加而增加。

2. 发明授权

US06180252B2 Semiconductor supercapacitor system, method for making same and articles produced therefrom 失效
标题翻译：半导体超级电容器系统，其制造方法和由其制造的制品
公开(公告)号：US06180252B2
公开(公告)日：2001-01-30
申请号：US08911716
申请日：1997-08-15
申请人： Mark Farrell , Harry Eugen Ruda , Yuichi Masaki
发明人： Mark Farrell , Harry Eugen Ruda , Yuichi Masaki
IPC分类号： B32B1700
CPC分类号： C23C18/1216 , C23C18/08 , C23C18/1275 , H01G4/1227
摘要： The invention relates to a nanostructured BaTiO3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, “M”, selected from Au, is Au, Cu, Ni3Al, Ru or InSn. The resulting titanate may be represented by the formula MdBaaTibOc wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of “M”.
摘要翻译：本发明涉及一种纳米结构的BaTiO3膜，板或阵列，其具有常规电容器的存储容量的1,000至10,000倍。钛酸钡具有式BaaTibOc，其中a和b独立地在0.75和1.25之间，c是2.5至约5.0。钛酸钡还可以掺杂有选自Au的“M”，为Au，Cu，Ni3Al，Ru或InSn。所得钛酸酯可以由式MdBaaTibOc表示，其中d为约0.01至0.25，a为约0.75至约1.25，b为约0.75至约1.25，c为约2.5至约5.0。 X射线衍射结果表明，薄膜的晶体结构从主要立方向变为四方晶相，微晶尺寸随“M”浓度的增加而增加。

3. 发明授权

US06623865B1 Lead zirconate titanate dielectric thin film composites on metallic foils 失效
标题翻译：锆钛酸铅电介质薄膜复合材料在金属箔上
公开(公告)号：US06623865B1
公开(公告)日：2003-09-23
申请号：US09518532
申请日：2000-03-04
申请人： Qin Zou , Ben G. Yacobi , Harry Eugen Ruda , Mark Farrell
发明人： Qin Zou , Ben G. Yacobi , Harry Eugen Ruda , Mark Farrell
IPC分类号： B32B1700
CPC分类号： H01G4/1245 , C04B37/021 , H01B3/12
摘要： Crystalline dielectric lead zirconate titanate thin film composites on metallic foils exhibit high dielectric constants, low dielectric loss (loss tangent of less than 5%) and low leakage current. The lead zirconate titanates may be of the formula PbZrxTiyOz (PZT) wherein x and y are independently from about 0.35 to about 0.65 and z is from about 2.5 to about 5.0. The thin foil dielectric composites can be prepared by a variety of methods including deposition of PZT thin films on brass, platinum, titanium, and stainless steel foils using sol-gel processing, sputtering deposition and chemical vapor deposition.
摘要翻译：金属箔上的结晶电介质锆钛酸铅薄膜复合材料表现出高介电常数，低介电损耗（损耗角正切小于5％）和低漏电流。锆酸锆酸铅可以具有式PbZrxTiyOz（PZT），其中x和y独立地为约0.35至约0.65，z为约2.5至约5.0。薄箔电介质复合材料可以通过各种方法制备，包括使用溶胶 - 凝胶法，溅射沉积和化学气相沉积在黄铜，铂，钛和不锈钢箔上沉积PZT薄膜。

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