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1. 发明授权

US06909631B2 MRAM and methods for reading the MRAM 有权
标题翻译： MRAM和读取MRAM的方法
公开(公告)号：US06909631B2
公开(公告)日：2005-06-21
申请号：US10679134
申请日：2003-10-02
申请人： Mark A. Durlam , Thomas W. Andre , Mark F. DeHerrera , Bradley N. Engel , Bradley J. Garni , Joseph J. Nahas , Nicholas D. Rizzo , Saied Tehrani
发明人： Mark A. Durlam , Thomas W. Andre , Mark F. DeHerrera , Bradley N. Engel , Bradley J. Garni , Joseph J. Nahas , Nicholas D. Rizzo , Saied Tehrani
IPC分类号： G11C11/15 , G11C11/16 , G11C11/14
CPC分类号： G11C11/16 , G11C11/15
摘要： An MRAM is provided that minimizes the limits in MRAM density imposed by utilization of an isolation or select device in each memory cell. In addition, methods are provided for reading an MTJ in a ganged memory cell of the MRAM. The method includes determining an electrical value that is at least partially associated with a resistance of a ganged memory cell of the MRAM. The MTJ in the ganged memory cell is toggled and a second electrical value, which is at least partially associated with the resistance of the ganged memory cell, is determined after toggling the MTJ. Once the electrical value prior to the toggling and after the toggling is determined, the difference between the two electrical values is analyzed to determine the value of the MTJ.
摘要翻译：提供了一种MRAM，其通过利用每个存储单元中的隔离或选择装置来最小化MRAM密度的限制。另外，提供了用于读取MRAM的联动存储单元中的MTJ的方法。该方法包括确定至少部分地与MRAM的联动存储器单元的电阻相关联的电气值。切换联合存储器单元中的MTJ，并且在切换MTJ之后确定至少部分地与组合存储器单元的电阻相关联的第二电值。一旦确定了切换之前和切换之后的电气值，则分析两个电气值之间的差异，以确定MTJ的值。

2. 发明授权

US06430084B1 Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer 失效
标题翻译：磁性随机存取存储器具有带铁磁覆层的数字线和位线
公开(公告)号：US06430084B1
公开(公告)日：2002-08-06
申请号：US09940263
申请日：2001-08-27
申请人： Nicholas D. Rizzo , Mark F. DeHerrera , Bradley N. Engel
发明人： Nicholas D. Rizzo , Mark F. DeHerrera , Bradley N. Engel
IPC分类号： G11C1115
CPC分类号： G11C11/5607 , G11C11/16 , H01L27/222
摘要： A magneto-electronic component includes an electrically conductive layer for generating a magnetic field, a ferromagnetic cladding layer adjacent to the electrically conductive layer, and an antiferromagnetic layer adjacent to the ferromagnetic cladding layer.
摘要翻译：磁电子部件包括用于产生磁场的导电层，与导电层相邻的铁磁性包层，以及与铁磁性包覆层相邻的反铁磁层。

3. 发明授权

US07088608B2 Reducing power consumption during MRAM writes using multiple current levels 失效
标题翻译：使用多个电流电平降低MRAM写入期间的功耗
公开(公告)号：US07088608B2
公开(公告)日：2006-08-08
申请号：US10737114
申请日：2003-12-16
申请人： Mark F. DeHerrera , Bengt Johan Akerman
发明人： Mark F. DeHerrera , Bengt Johan Akerman
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A reduced power method of writing MRAM bits is disclosed. The reduced power method includes writing MRAM bits by applying a first magnetic field having a low magnitude, then determining if the bit has switched. If not, a second magnetic field having a higher magnitude is applied. Applying magnetic fields to an MRAM bit cell is accomplished by sending a current pulse through a strip line adjacent to the MRAM bit cell. The technique can be performed for every write to an MRAM bit. Alternatively, the weaker magnetic field can be applied during system test or system initialization, and if the weaker field fails to write the bit to a desired value, the failing result is stored and each subsequent write to the MRAM bit utilizes the stronger magnetic field.
摘要翻译：公开了一种写入MRAM位的降低功耗的方法。降低功率方法包括通过施加具有低幅度的第一磁场来写入MRAM位，然后确定该位是否已切换。如果不是，则施加具有较大幅度的第二磁场。将磁场施加到MRAM位单元是通过将电流脉冲发送到与MRAM位单元相邻的带状线来实现的。可以对每次写入MRAM位执行该技术。或者，较弱的磁场可以在系统测试或系统初始化期间应用，如果较弱的磁场无法将该位写入所需的值，则存储故障结果，并且每次对MRAM位的后续写入都会使用更强的磁场。

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