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1. 发明申请

US20140291615A1 EXTREME HIGH MOBILITY CMOS LOGIC 有权
标题翻译：极高的移动性CMOS逻辑
公开(公告)号：US20140291615A1
公开(公告)日：2014-10-02
申请号：US14302371
申请日：2014-06-11
申请人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
发明人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
IPC分类号： H01L27/092 , H01L29/15
CPC分类号： H01L29/7784 , H01L21/02178 , H01L21/02381 , H01L21/02546 , H01L21/823807 , H01L21/823885 , H01L21/8252 , H01L27/0605 , H01L27/092 , H01L29/1054 , H01L29/122 , H01L29/15 , H01L29/157 , H01L29/205 , H01L29/41783 , H01L29/42364 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/7783
摘要： A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
摘要翻译： CMOS器件包括具有第一量子阱结构的PMOS晶体管和具有第二量子阱结构的NMOS器件。 PMOS和NMOS晶体管形成在衬底上。

2. 发明申请

US20120199813A1 EXTREME HIGH MOBILITY CMOS LOGIC 有权
标题翻译：极高的移动性CMOS逻辑
公开(公告)号：US20120199813A1
公开(公告)日：2012-08-09
申请号：US13450359
申请日：2012-04-18
申请人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
发明人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L29/7784 , H01L21/02178 , H01L21/02381 , H01L21/02546 , H01L21/823807 , H01L21/823885 , H01L21/8252 , H01L27/0605 , H01L27/092 , H01L29/1054 , H01L29/122 , H01L29/15 , H01L29/157 , H01L29/205 , H01L29/41783 , H01L29/42364 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/7783
摘要： A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
摘要翻译： CMOS器件包括具有第一量子阱结构的PMOS晶体管和具有第二量子阱结构的NMOS器件。 PMOS和NMOS晶体管形成在衬底上。

3. 发明申请

US20080116485A1 SB-BASED CMOS DEVICES 有权
标题翻译：基于SB的CMOS器件
公开(公告)号：US20080116485A1
公开(公告)日：2008-05-22
申请号：US11560494
申请日：2006-11-16
申请人： Mantu K. Hudait , Suman Datta , Jack T. Kavalieros , Mark L. Doczy , Robert S. Chau
发明人： Mantu K. Hudait , Suman Datta , Jack T. Kavalieros , Mark L. Doczy , Robert S. Chau
IPC分类号： H01L27/092
CPC分类号： H01L27/0605 , H01L21/8252 , H01L27/092
摘要： A group III-V material CMOS device may have NMOS and PMOS portions that are substantially the same through several of their layers. This may make the CMOS device easy to make and prevent coefficient of thermal expansion mismatches between the NMOS and PMOS portions.
摘要翻译： III-V族材料CMOS器件可以具有通过它们的几个层基本上相同的NMOS和PMOS部分。这可能使CMOS器件易于制造并且防止NMOS和PMOS部分之间的热膨胀失配系数。

4. 发明授权

US07429747B2 Sb-based CMOS devices 有权
标题翻译：基于Sb的CMOS器件
公开(公告)号：US07429747B2
公开(公告)日：2008-09-30
申请号：US11560494
申请日：2006-11-16
申请人： Mantu K. Hudait , Suman Datta , Jack T. Kavalieros , Mark L. Doczy , Robert S. Chau
发明人： Mantu K. Hudait , Suman Datta , Jack T. Kavalieros , Mark L. Doczy , Robert S. Chau
IPC分类号： H01L29/06 , H01L29/20
CPC分类号： H01L27/0605 , H01L21/8252 , H01L27/092
摘要： A group III-V material CMOS device may have NMOS and PMOS portions that are substantially the same through several of their layers. This may make the CMOS device easy to make and prevent coefficient of thermal expansion mismatches between the NMOS and PMOS portions.
摘要翻译： III-V族材料CMOS器件可以具有通过它们的几个层基本上相同的NMOS和PMOS部分。这可能使CMOS器件易于制造并且防止NMOS和PMOS部分之间的热膨胀失配系数。

5. 发明授权

US08518768B2 Extreme high mobility CMOS logic 有权
标题翻译：极高移动性CMOS逻辑
公开(公告)号：US08518768B2
公开(公告)日：2013-08-27
申请号：US13450359
申请日：2012-04-18
申请人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
发明人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
IPC分类号： H01L21/70 , H01L21/8238
CPC分类号： H01L29/7784 , H01L21/02178 , H01L21/02381 , H01L21/02546 , H01L21/823807 , H01L21/823885 , H01L21/8252 , H01L27/0605 , H01L27/092 , H01L29/1054 , H01L29/122 , H01L29/15 , H01L29/157 , H01L29/205 , H01L29/41783 , H01L29/42364 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/7783
摘要： A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
摘要翻译： CMOS器件包括具有第一量子阱结构的PMOS晶体管和具有第二量子阱结构的NMOS器件。 PMOS和NMOS晶体管形成在衬底上。

6. 发明授权

US08802517B2 Extreme high mobility CMOS logic 有权
标题翻译：极高移动性CMOS逻辑
公开(公告)号：US08802517B2
公开(公告)日：2014-08-12
申请号：US13962890
申请日：2013-08-08
申请人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
发明人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
IPC分类号： H01L21/338
CPC分类号： H01L29/7784 , H01L21/02178 , H01L21/02381 , H01L21/02546 , H01L21/823807 , H01L21/823885 , H01L21/8252 , H01L27/0605 , H01L27/092 , H01L29/1054 , H01L29/122 , H01L29/15 , H01L29/157 , H01L29/205 , H01L29/41783 , H01L29/42364 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/7783
摘要： A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
摘要翻译： CMOS器件包括具有第一量子阱结构的PMOS晶体管和具有第二量子阱结构的NMOS器件。 PMOS和NMOS晶体管形成在衬底上。

7. 发明申请

US20130328015A1 EXTREME HIGH MOBILITY CMOS LOGIC 有权
标题翻译：极高的移动性CMOS逻辑
公开(公告)号：US20130328015A1
公开(公告)日：2013-12-12
申请号：US13962890
申请日：2013-08-08
申请人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
发明人： Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L29/7784 , H01L21/02178 , H01L21/02381 , H01L21/02546 , H01L21/823807 , H01L21/823885 , H01L21/8252 , H01L27/0605 , H01L27/092 , H01L29/1054 , H01L29/122 , H01L29/15 , H01L29/157 , H01L29/205 , H01L29/41783 , H01L29/42364 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/7783
摘要： A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
摘要翻译： CMOS器件包括具有第一量子阱结构的PMOS晶体管和具有第二量子阱结构的NMOS器件。 PMOS和NMOS晶体管形成在衬底上。

8. 发明授权

US07989280B2 Dielectric interface for group III-V semiconductor device 有权
标题翻译： III-V族半导体器件的介质界面
公开(公告)号：US07989280B2
公开(公告)日：2011-08-02
申请号：US12338839
申请日：2008-12-18
申请人： Justin K. Brask , Suman Datta , Mark L. Doczy , James M. Blackwell , Matthew V. Metz , Jack T. Kavalieros , Robert S. Chau
发明人： Justin K. Brask , Suman Datta , Mark L. Doczy , James M. Blackwell , Matthew V. Metz , Jack T. Kavalieros , Robert S. Chau
IPC分类号： H01L21/336
CPC分类号： H01L21/314 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/28008 , H01L21/3141 , H01L21/31616 , H01L21/31645 , H01L29/2003 , H01L29/495 , H01L29/513 , H01L29/517 , H01L29/66462 , H01L29/7784
摘要： A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
摘要翻译：描述了III-V族半导体器件及其制造方法。高k电介质通过硫族化物区域连接到约束区域。

9. 发明申请

US20090090976A1 PROCESS FOR INTEGRATING PLANAR AND NON-PLANAR CMOS TRANSISTORS ON A BULK SUBSTRATE AND ARTICLE MADE THEREBY 有权
标题翻译：在大容量基板上集成平面和非平面CMOS晶体管的过程及其制造
公开(公告)号：US20090090976A1
公开(公告)日：2009-04-09
申请号：US12333248
申请日：2008-12-11
申请人： Jack T. Kavalieros , Justin K. Brask , Brian S. Doyle , Uday Shah , Suman Datta , Mark L. Doczy , Matthew V. Metz , Robert S. Chau
发明人： Jack T. Kavalieros , Justin K. Brask , Brian S. Doyle , Uday Shah , Suman Datta , Mark L. Doczy , Matthew V. Metz , Robert S. Chau
IPC分类号： H01L29/78
CPC分类号： H01L21/823828 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L29/1037 , H01L29/66545 , H01L29/66795 , H01L29/785 , H01L29/7851
摘要： A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
摘要翻译：一种能够将平面和非平面晶体管集成到体半导体衬底上的工艺，其中所有晶体管的沟道可在连续的宽度范围内定义。

10. 发明申请

US20080017891A1 PINNING LAYER FOR LOW RESISTIVITY N-TYPE SOURCE DRAIN OHMIC CONTACTS 有权
标题翻译：密封层用于低电阻N型源漏管OHMIC接触
公开(公告)号：US20080017891A1
公开(公告)日：2008-01-24
申请号：US11480667
申请日：2006-06-30
申请人： Suman Datta , Jack T. Kavalieros , Robert S. Chau , Mark L. Doczy
发明人： Suman Datta , Jack T. Kavalieros , Robert S. Chau , Mark L. Doczy
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L29/0847 , H01L21/28525 , H01L29/7833
摘要： A system or apparatus including an N-type transistor structure including a gate electrode formed on a substrate and source and drain regions formed in the substrate; a contact to the source region; and a pinning layer disposed between the source region and the first contact and defining an interface between the pinning layer and the source region, wherein the pinning layer has donor-type surface states in a conduction band. A method including forming a transistor structure including a gate electrode on a substrate and source and drain regions formed in the substrate; depositing a pinning layer having donor-type surface states on the source and drain regions such that an interface is defined between the pinning layer and the respective one of the source and drain regions; and forming a first contact to the source region and a second contact to the drain region.
摘要翻译：一种包括N型晶体管结构的系统或装置，包括形成在衬底上的栅电极和形成在衬底中的源区和漏区; 与源区的联系; 以及钉扎层，其设置在所述源区域和所述第一触点之间并且限定所述钉扎层和所述源区域之间的界面，其中所述钉扎层在导带中具有施主型表面状态。一种包括在衬底上形成包括栅电极的晶体管结构和形成在衬底中的源极和漏极区的方法; 在源极和漏极区域上沉积具有施主型表面状态的钉扎层，使得在钉扎层与源极和漏极区域中的相应一个之间界定界面; 以及向所述源极区域形成第一接触和向所述漏极区域形成第二接触。

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