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    • 5. 发明授权
    • Test mode method and apparatus for internal memory timing signals
    • 用于内部存储器定时信号的测试模式方法和装置
    • US07339841B2
    • 2008-03-04
    • US11227099
    • 2005-09-16
    • Martin VersenKlaus NierleOliver KiehlErnst Stahl
    • Martin VersenKlaus NierleOliver KiehlErnst Stahl
    • G11C7/00
    • G11C29/50G11C29/12015G11C29/14G11C29/50012
    • A method of testing internal signals of a memory for timing marginalities which may result in unstable operation includes: delaying internal address signals of the memory by an amount great enough so that data cannot be validly written to and read from memory locations which are accessed by address signals having timing marginalities which are delayed but small enough so that data can be validly written to and read from memory locations which are accessed by address signals not having such timing marginalities which are delayed. Data is then written to and read from memory locations which are accessed by delayed address signals, and a determination is made as to whether the data read from any memory location does not correspond with the data written to such memory location.
    • 测试存储器的内部信号的方法,其可能导致不稳定的操作的定时边界,包括:将存储器的内部地址信号延迟足够大的量,使得数据不能被有效地写入到存储器位置并从其被地址访问的存储器位置读取 具有延迟但足够小的定时边缘的信号,使得数据可以被有效地写入到存储单元中并从存储位置读取,地址信号不具有被延迟的这种定时边缘。 然后将数据写入到由延迟的地址信号访问的存储器位置并从其读取,并且确定从任何存储器位置读取的数据是否与写入该存储器位置的数据不对应。
    • 6. 发明申请
    • Test mode method and apparatus for internal memory timing signals
    • 用于内部存储器定时信号的测试模式方法和装置
    • US20070064505A1
    • 2007-03-22
    • US11227099
    • 2005-09-16
    • Martin VersenKlaus NierleOliver KiehlErnst Stahl
    • Martin VersenKlaus NierleOliver KiehlErnst Stahl
    • G11C7/00
    • G11C29/50G11C29/12015G11C29/14G11C29/50012
    • A method of testing internal signals of a memory for timing marginalities which may result in unstable operation includes: delaying internal address signals of the memory by an amount great enough so that data cannot be validly written to and read from memory locations which are accessed by address signals having timing marginalities which are delayed but small enough so that data can be validly written to and read from memory locations which are accessed by address signals not having such timing marginalities which are delayed. Data is then written to and read from memory locations which are accessed by delayed address signals, and a determination is made as to whether the data read from any memory location does not correspond with the data written to such memory location.
    • 测试存储器的内部信号的方法,其可能导致不稳定的操作的定时边界,包括:将存储器的内部地址信号延迟足够大的量,使得数据不能被有效地写入到存储器位置并从其被地址访问的存储器位置读取 具有延迟但足够小的定时边缘的信号,使得数据可以被有效地写入到存储单元中并从存储位置读取,地址信号不具有被延迟的这种定时边缘。 然后将数据写入到由延迟的地址信号访问的存储器位置并从其读取,并且确定从任何存储器位置读取的数据是否与写入该存储器位置的数据不对应。
    • 7. 发明授权
    • Voltage regulator with distributed output transistor
    • 具有分布式输出晶体管的稳压器
    • US06760248B2
    • 2004-07-06
    • US10267262
    • 2002-10-09
    • Ernst Stahl
    • Ernst Stahl
    • G11C1124
    • G11C7/1066G11C5/147G11C7/12G11C11/4074G11C11/4094
    • A memory device and method of manufacturing thereof having a voltage regulator with distributed output transistor. A novel approach for the bitline high voltage (VBLH) generation is used to save chip area by allowing narrower power bussing. The output transistor is distributed along the array edge. In addition, the transistor is divided into sections with different channel widths to compensate for current drive losses due to voltage drops along the VDD power bus. The IR-drop on the VBLH line is eliminated, and a constant output voltage is provided along the array edge.
    • 一种存储器件及其制造方法,具有分布式输出晶体管的电压调节器。 利用位线高电压(VBLH)生成的新颖方法可以通过允许较窄的功率总线来节省芯片面积。 输出晶体管沿阵列边缘分布。 此外,晶体管被分成具有不同沟道宽度的部分,以补偿由于沿VDD电源总线的电压降引起的电流驱动损耗。 消除VBLH线上的IR降,沿着阵列边缘提供恒定的输出电压。
    • 9. 发明申请
    • DISTRIBUTED VOLTAGE REGULATOR
    • 分布式电压调节器
    • US20090051418A1
    • 2009-02-26
    • US11842254
    • 2007-08-21
    • DIETMAR GOGLErnst Stahl
    • DIETMAR GOGLErnst Stahl
    • G05F1/10
    • G11C5/147G05F1/56G11C5/025
    • An integrated circuit device and a method for providing distributed voltage regulation. The device includes a plurality of memory cell arrays and access circuitry dependent on one or more regulated voltages generated on the device and a plurality of pulsed digital distributed output units configured to generate the one or more regulated voltages. The device also includes a voltage regulator control logic configured to generate one or more control signals to control the distributed output units based, at least in part, on a comparison between one or more reference voltages and the one or more regulated voltages.
    • 一种集成电路装置和提供分布式电压调节的方法。 该装置包括多个存储单元阵列和取决于在该装置上产生的一个或多个调节电压的访问电路以及被配置为产生一个或多个调节电压的多个脉冲数字分布式输出单元。 该装置还包括电压调节器控制逻辑,其被配置为至少部分地基于一个或多个参考电压与一个或多个调节电压之间的比较来产生一个或多个控制信号以控制分布式输出单元。