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1. 发明申请

US20090139977A1 Apparatus For Thermally Treating Semiconductor Substrates 有权
标题翻译：用于热处理半导体基板的设备
公开(公告)号：US20090139977A1
公开(公告)日：2009-06-04
申请号：US12251916
申请日：2008-10-15
申请人： Manfred Falter , Ernst Falter , Jeanette Falter
发明人： Manfred Falter , Ernst Falter , Jeanette Falter
IPC分类号： F27D11/12 , H01L21/324 , F27D11/00
CPC分类号： H01L21/67115
摘要： An apparatus for thermally treating semiconductor substrates has a processing space which is defined by first walls substantially parallel to the semiconductor substrate and a second side wall connected to the first walls; a substrate holding device disposed in the processing space which defines a substrate retaining region for a semiconductor substrate in the processing space; and heating elements which are disposed in the processing space between at least one of the first walls and the substrate retaining region. The thermal gradient between the edge of the semiconductor substrate and the center of the semiconductor substrate can be effectively compensated by providing a shutter between the substrate retaining region and the heating elements which limits the radiation emitted in the processing space by the heating elements in the direction of the substrate retaining region.
摘要翻译：用于热处理半导体衬底的设备具有由基本上平行于半导体衬底的第一壁和连接到第一壁的第二侧壁限定的处理空间; 衬底保持装置，设置在所述处理空间中，所述衬底保持装置在所述处理空间中限定用于半导体衬底的衬底保持区域; 以及设置在所述处理空间中的所述第一壁和所述基板保持区域中的至少一个之间的加热元件。半导体衬底的边缘和半导体衬底的中心之间的热梯度可以通过在衬底保持区域和加热元件之间提供快门来有效地补偿，该快门限制加热元件在处理空间中发射的辐射方向的基板保持区域。

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