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1. 发明授权

US4256513A Photoelectric conversion device 失效
标题翻译：光电转换装置
公开(公告)号：US4256513A
公开(公告)日：1981-03-17
申请号：US85205
申请日：1979-10-16
申请人： Manabu Yoshida , Jun Fukuchi , Shigetoshi Takayanagi
发明人： Manabu Yoshida , Jun Fukuchi , Shigetoshi Takayanagi
IPC分类号： H01L31/0224 , H01L31/00
CPC分类号： H01L31/022425 , Y02E10/50
摘要： A photoelectric conversion device such as a solar cell in which electrodes formed from a conductive paste make ohmic contact with the surfaces of impurity diffused layers respectively formed in a semiconductor substrate. The conductive paste contains ultrafine particles of silver and gold as its principal solid components. The conductive paste further contains, as its additional principal solid components, ultrafine particles of a metal having a eutectic temperature lower than that of silver when alloyed with the semiconductor and a powdery glass material not containing any lead oxide glass component. The electrodes provided by the conductive paste exhibit excellent electrical properties when the conductive paste is subjected to firing treatment at a temperature of about 600.degree. C. Thus, when, for example, the semiconductor substrate is of n-type silicon and a p.sup.+ -type diffused layer is formed in one of its major surfaces to form a p.sup.+ /n junction of relatively small depth, the electrode making ohmic contact with the p.sup.+ -type diffused layer does not penetrate through the p.sup.+ /n junction and has a low contact resistance. The photoelectric conversion device such as the solar cell thus obtained can operate with a higher conversion efficiency than hitherto and can be manufactured at a lower cost than hitherto.
摘要翻译：诸如太阳能电池的光电转换装置，其中由导电浆料形成的电极与分别形成在半导体衬底中的杂质扩散层的表面欧姆接触。导电浆料含有银和金的超细颗粒作为其主要固体成分。作为其附加的主要固体成分，导电性糊料还含有与半导体合金化时共晶温度低于银的金属的超微粒子，以及不含有氧化铅玻璃成分的粉末状玻璃材料。当导电浆料在约600℃的温度下进行焙烧处理时，由导电膏提供的电极表现出优异的电性能。因此，当例如半导体衬底是n型硅和p +型扩散层形成在其一个主表面中以形成相对较小深度的p + / n结，与p +型扩散层欧姆接触的电极不穿透p + / n结并且具有低接触电阻。由此获得的太阳能电池等光电转换装置能够以比以往更高的转换效率进行运转，并且可以以比迄今为止更低的成本制造。

2. 发明授权

US4185291A Junction-type field effect transistor and method of making the same 失效
标题翻译：结型场效应晶体管及其制作方法
公开(公告)号：US4185291A
公开(公告)日：1980-01-22
申请号：US916818
申请日：1978-06-16
申请人： Takashi Hirao , Shigetoshi Takayanagi , Takeshi Onuma , Toshio Sugawa , Kaoru Inoue
发明人： Takashi Hirao , Shigetoshi Takayanagi , Takeshi Onuma , Toshio Sugawa , Kaoru Inoue
IPC分类号： H01L29/80 , H01L21/265 , H01L21/337 , H01L29/808
CPC分类号： H01L29/808
摘要： A junction-type FET comprising a semiconductor substrate 21 of a first conductivity type, and island region 22 of a second conductivity type which comprises a channel region and is selectively formed in the semiconductor substrate 21, and a buried isolating region 27 which is selected from the group consisting of an intrinsic layer, a low impurity concentration layer of the second conductivity type and a layer of first conductivity type, the buried isolating layer being formed by ion implantation of impurities of the first conductivity type in the island region 22 while keeping the impurity concentration at the surface thereof relatively high, and the buried isolating layer substantially isolating the channel region from the surface.
摘要翻译：包括第一导电类型的半导体衬底21和包括沟道区并且选择性地形成在半导体衬底21中的第二导电类型的岛状区域22的结型FET，以及选自由第二导电类型的本征层，低杂质浓度层和第一导电类型的层组成的组，所述掩埋隔离层通过在岛状区域22中离子注入第一导电类型的杂质而形成，同时保持表面上的杂质浓度相对较高，并且掩埋隔离层基本上使沟道区域与表面隔离。

3. 发明授权

US4261792A Method for fabrication of semiconductor devices 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US4261792A
公开(公告)日：1981-04-14
申请号：US932194
申请日：1978-08-09
申请人： Kazuhiko Tsuji , Takashi Ohzone , Shigetoshi Takayanagi
发明人： Kazuhiko Tsuji , Takashi Ohzone , Shigetoshi Takayanagi
IPC分类号： H01L21/306 , H01L21/3063 , H01L21/312 , H01L21/316 , H01L21/3213 , H01L21/768 , H01L21/308
CPC分类号： H01L21/76888 , H01L21/312 , H01L21/31687 , H01L21/32134
摘要： A metallization or conductor or semiconductor layer formed over one major surface of a semiconductor wafer subjected to anodizing to form an anodized coating which has excellent adherence to the conductor or semiconductor layer and which is used as an etching mask when the conductor or semiconductor layer is etched.
摘要翻译：在经过阳极化处理的半导体晶片的一个主表面上形成的金属化或导体或半导体层，以形成对导体或半导体层具有优异粘附性的阳极化涂层，并且当导体或半导体层被蚀刻时用作蚀刻掩模。

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