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1. 发明授权

US08263490B2 Formation method of metallic electrode of semiconductor device and metallic electrode formation apparatus 有权
标题翻译：半导体器件和金属电极形成装置的金属电极的形成方法
公开(公告)号：US08263490B2
公开(公告)日：2012-09-11
申请号：US12923576
申请日：2010-09-28
申请人： Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki
发明人： Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki
IPC分类号： H01L21/44
CPC分类号： G01B11/06 , G01B11/306 , H01L21/32115 , H01L21/7684 , H01L22/12 , H01L22/20 , H01L24/27 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , Y10T29/52 , H01L2924/01014 , H01L2924/00
摘要： A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.
摘要翻译：公开了半导体器件的金属电极的形成方法。该方法包括：获取关于半导体衬底的表面部分的表面形状的数据; 并且使变形装置基于数据使半导体衬底变形，使得切割平面和表面部分之间的距离落入所需切割量的精度。在使半导体基板变形时，使用多个致动器作为变形装置。多个致动器的间距被设定为大于半导体衬底的厚度分布的空间频率的波长的一半的值，小于或等于该波长的值。

2. 发明申请

US20110207264A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20110207264A1
公开(公告)日：2011-08-25
申请号：US12905395
申请日：2010-10-15
申请人： Manabu TOMISAKA , Akira Tai , Kazuo Akamatsu , Yutaka Fukuda , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
发明人： Manabu TOMISAKA , Akira Tai , Kazuo Akamatsu , Yutaka Fukuda , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
IPC分类号： H01L21/56
CPC分类号： H01L21/304 , H01L29/66333 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 μm.
摘要翻译：半导体器件的制造方法包括：利用切削工具切断形成在半导体基板的表面上的树脂绝缘层的一部分。切割树脂绝缘层的一部分包括切割具有设置有金属层的表面的树脂绝缘层的一部分。切割树脂绝缘层的部分是这样一种方式进行的：在树脂绝缘层沿着切削工具的边缘部分和边缘部分的周边部分的应力分布中，90％的宽度最大值不大于1.3μm。

3. 发明申请

US20110198733A1 SEMICONDUCTOR DEVICE AND METHOD OF PATTERNNING RESIN INSULATION LAYER ON SUBSTRATE OF THE SAME 有权
标题翻译：半导体器件及其基片上树脂绝缘层图案的方法
公开(公告)号：US20110198733A1
公开(公告)日：2011-08-18
申请号：US12887874
申请日：2010-09-22
申请人： Manabu Tomisaka , Michio Kameyama , Terukazu Fukaya , Kazuhito Katoh , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
发明人： Manabu Tomisaka , Michio Kameyama , Terukazu Fukaya , Kazuhito Katoh , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
IPC分类号： H01L29/06 , H01L21/66
CPC分类号： H01L21/76804 , H01L23/293 , H01L23/3171 , H01L23/5226 , H01L24/03 , H01L24/11 , H01L24/741 , H01L2224/02166 , H01L2224/0384 , H01L2224/0391 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/0517 , H01L2224/05171 , H01L2224/05172 , H01L2224/05572 , H01L2224/05573 , H01L2224/05582 , H01L2224/05583 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05669 , H01L2224/11505 , H01L2224/131 , H01L2224/16 , H01L2224/749 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L2924/181 , H01L2924/00014 , H01L2924/01026 , H01L2924/01014 , H01L2924/00 , H01L2224/05552
摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.
摘要翻译：在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

4. 发明授权

US08405218B2 Semiconductor device and method of patterning resin insulation layer on substrate of the same 有权
标题翻译：树脂绝缘层的图案化半导体装置及方法
公开(公告)号：US08405218B2
公开(公告)日：2013-03-26
申请号：US12887874
申请日：2010-09-22
申请人： Manabu Tomisaka , Michio Kameyama , Terukazu Fukaya , Kazuhito Katoh , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki
发明人： Manabu Tomisaka , Michio Kameyama , Terukazu Fukaya , Kazuhito Katoh , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76804 , H01L23/293 , H01L23/3171 , H01L23/5226 , H01L24/03 , H01L24/11 , H01L24/741 , H01L2224/02166 , H01L2224/0384 , H01L2224/0391 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/0517 , H01L2224/05171 , H01L2224/05172 , H01L2224/05572 , H01L2224/05573 , H01L2224/05582 , H01L2224/05583 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05669 , H01L2224/11505 , H01L2224/131 , H01L2224/16 , H01L2224/749 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L2924/181 , H01L2924/00014 , H01L2924/01026 , H01L2924/01014 , H01L2924/00 , H01L2224/05552
摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.
摘要翻译：在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

5. 发明申请

US20110207241A1 Formation method of metallic electrode of semiconductor device and metallic electrode formation apparatus 有权
标题翻译：半导体器件和金属电极形成装置的金属电极的形成方法
公开(公告)号：US20110207241A1
公开(公告)日：2011-08-25
申请号：US12923576
申请日：2010-09-28
申请人： Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Yoshiko Fukuda , Akira Tai , Kazuo Akamatsu
发明人： Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Yoshiko Fukuda , Akira Tai , Kazuo Akamatsu
IPC分类号： H01L21/66 , B23P19/00
CPC分类号： G01B11/06 , G01B11/306 , H01L21/32115 , H01L21/7684 , H01L22/12 , H01L22/20 , H01L24/27 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , Y10T29/52 , H01L2924/01014 , H01L2924/00
摘要： A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.
摘要翻译：公开了半导体器件的金属电极的形成方法。该方法包括：获取关于半导体衬底的表面部分的表面形状的数据; 并且使变形装置基于数据使半导体衬底变形，使得切割平面和表面部分之间的距离落入所需切割量的精度。在使半导体基板变形时，使用多个致动器作为变形装置。多个致动器的间距被设定为大于半导体衬底的厚度分布的空间频率的波长的一半的值，小于或等于该波长的值。

6. 发明申请

US20110042741A1 Semiconductor device having semiconductor chip and metal plate and method for manufacturing the same 有权
标题翻译：具有半导体芯片和金属板的半导体装置及其制造方法
公开(公告)号：US20110042741A1
公开(公告)日：2011-02-24
申请号：US12805733
申请日：2010-08-17
申请人： Daisuke Fukuoka , Takanori Teshima , Kuniaki Mamitsu , Ken Sakamoto , Manabu Tomisaka , Tetsuo Fujii , Akira Tai , Kazuo Akamatsu , Masayoshi Nishihata
发明人： Daisuke Fukuoka , Takanori Teshima , Kuniaki Mamitsu , Ken Sakamoto , Manabu Tomisaka , Tetsuo Fujii , Akira Tai , Kazuo Akamatsu , Masayoshi Nishihata
IPC分类号： H01L29/772 , H01L23/498
CPC分类号： H01L23/3192 , H01L23/4334 , H01L23/492 , H01L24/01 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L2224/0401 , H01L2224/04042 , H01L2224/05599 , H01L2224/05644 , H01L2224/16 , H01L2224/48491 , H01L2224/73253 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/0105 , H01L2924/01052 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13055 , H01L2924/3512 , H01L2924/00
摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.
摘要翻译：半导体器件包括用于覆盖第一金属布线的第一保护膜。第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

7. 发明授权

US08441122B2 Semiconductor device having semiconductor chip and metal plate 有权
标题翻译：具有半导体芯片和金属板的半导体器件
公开(公告)号：US08441122B2
公开(公告)日：2013-05-14
申请号：US12805733
申请日：2010-08-17
申请人： Daisuke Fukuoka , Takanori Teshima , Kuniaki Mamitsu , Ken Sakamoto , Tetsuo Fujii , Akira Tai , Kazuo Akamatsu , Masayoshi Nishihata
发明人： Daisuke Fukuoka , Takanori Teshima , Kuniaki Mamitsu , Ken Sakamoto , Tetsuo Fujii , Akira Tai , Kazuo Akamatsu , Masayoshi Nishihata
IPC分类号： H01L23/34
CPC分类号： H01L23/3192 , H01L23/4334 , H01L23/492 , H01L24/01 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L2224/0401 , H01L2224/04042 , H01L2224/05599 , H01L2224/05644 , H01L2224/16 , H01L2224/48491 , H01L2224/73253 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/0105 , H01L2924/01052 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13055 , H01L2924/3512 , H01L2924/00
摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.
摘要翻译：半导体器件包括用于覆盖第一金属布线的第一保护膜。第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

8. 发明申请

US20080239817A1 Nonvolatile semiconductor memory device and method of erasing and programming the same 有权
标题翻译：非易失性半导体存储器件及其擦除和编程方法
公开(公告)号：US20080239817A1
公开(公告)日：2008-10-02
申请号：US12078446
申请日：2008-03-31
申请人： Mitsutaka Katada , Yukiaki Yogo , Akira Tai , Yukihiko Watanabe
发明人： Mitsutaka Katada , Yukiaki Yogo , Akira Tai , Yukihiko Watanabe
IPC分类号： G11C16/10
CPC分类号： H01L29/4983 , H01L21/28273 , H01L29/42324 , H01L29/7885
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a source, a drain, and a channel region between the source and the drain. The channel region has a first end portion near the drain, a second end portion near the source, and a middle portion between the first and second end portions. The first and second end portions having approximately same width. The memory device is electrically erased by using a hot carrier generated in the first end portion due to avalanche breakdown. The channel region includes a first channel extending from the drain and a second channel adjacent to the first channel. An impurity concentration of the second channel is higher than that of the first channel. An interface between the first and second channels is located in the middle portion between the first and second end portions.
摘要翻译：非易失性半导体存储器件包括在源极和漏极之间具有源极，漏极和沟道区域的半导体衬底。沟道区域具有靠近漏极的第一端部，靠近源极的第二端部，以及第一和第二端部之间的中间部分。第一和第二端部具有大致相同的宽度。通过使用由于雪崩击穿而在第一端部中产生的热载体来电存储器件。沟道区域包括从漏极延伸的第一通道和邻近第一通道的第二通道。第二通道的杂质浓度高于第一通道的杂质浓度。第一和第二通道之间的界面位于第一和第二端部之间的中间部分。

9. 发明申请

US20060278950A1 Semiconductor device having first and second insulation separation regions 有权
标题翻译：具有第一和第二绝缘分离区域的半导体器件
公开(公告)号：US20060278950A1
公开(公告)日：2006-12-14
申请号：US11447021
申请日：2006-06-06
申请人： Akira Tai
发明人： Akira Tai
IPC分类号： H01L29/00
CPC分类号： H01L23/345 , H01L21/76264 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate having a first surface and a second surface; a first insulation separation region disposed on the first surface of the semiconductor substrate; a second insulation separation region surrounded with the first insulation separation region and electrically isolated from the first insulation separation region; a semiconductor element disposed in the second insulation separation region; and an electrode connecting to the first insulation separation region for energizing and generating heat in the first insulation separation region. The first insulation separation region functions as a heater so that the semiconductor element in the second insulation separation region is locally heated.
摘要翻译：半导体器件包括：具有第一表面和第二表面的半导体衬底; 设置在所述半导体基板的第一表面上的第一绝缘分离区域; 第二绝缘分离区，被所述第一绝缘分离区包围并与所述第一绝缘分离区电绝缘; 设置在所述第二绝缘分离区域中的半导体元件; 以及连接到第一绝缘分离区域的电极，用于在第一绝缘分离区域中激发和产生热量。第一绝缘分离区域用作加热器，使得第二绝缘分离区域中的半导体元件被局部加热。

10. 发明授权

US5749031A Developing apparatus in use with an image forming apparatus 失效
标题翻译：与图像形成装置一起使用的显影装置
公开(公告)号：US5749031A
公开(公告)日：1998-05-05
申请号：US670394
申请日：1996-06-25
申请人： Tadashi Miwa , Hidehiro Kanda , Isao Matsuoka , Toru Makino , Wang Zhoa Yan , Ryoko Yoshikawa , Akira Tai , Naoto Tokutake , Masahiro Shigetomi
发明人： Tadashi Miwa , Hidehiro Kanda , Isao Matsuoka , Toru Makino , Wang Zhoa Yan , Ryoko Yoshikawa , Akira Tai , Naoto Tokutake , Masahiro Shigetomi
IPC分类号： G03G15/00 , G03G15/01 , G03G15/08 , G03G21/16 , G03G15/06
CPC分类号： G03G15/0126 , G03G15/0896 , G03G2215/017
摘要： A developer in use with an image forming apparatus. The developer includes: a developing sleeve which rotates and holds toner on itself so as to develop a latent image on a photoreceptor with the toner; a driving motor for generating a rotational driving force; a drive transmission for transmitting the rotational driving force of the driving motor to the developing cartridge in which the drive transmission has a transmitting state and an untransmitting state; and a shock easing controller or member for easing a shock of transmission of the rotational driving force to the developing sleeve in the transmitting state, in which the shock easing controller or member is provided in at least one of the driving means and the drive transmission means.
摘要翻译：与图像形成装置一起使用的显影剂。显影剂包括：显影套筒，其自身旋转并保持调色剂，以便在调色剂的感光体上显影潜像; 用于产生旋转驱动力的驱动电机; 用于将驱动电动机的旋转驱动力传递到驱动变速器具有发送状态和不发送状态的显影盒的驱动变速器; 以及减震控制器或构件，用于在传动状态下减轻旋转驱动力传递到显影套筒的冲击，其中缓冲控制器或构件设置在驱动装置和驱动传动装置中的至少一个中。

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