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    • 5. 发明授权
    • Optical recording medium
    • 光记录介质
    • US06548138B2
    • 2003-04-15
    • US09822734
    • 2001-03-30
    • Toru AbikoAyumi KonishiTomoki KanesakaHitoshi Shimomuki
    • Toru AbikoAyumi KonishiTomoki KanesakaHitoshi Shimomuki
    • B32B302
    • G11B7/24082G11B7/007G11B7/24G11B7/24079G11B7/243G11B7/2578G11B7/258G11B7/2585G11B7/259G11B2007/2431G11B2007/24312G11B2007/24314G11B2007/24316Y10T428/21
    • In order to ensure CAV recording/reproduction while preventing jitter increase and modulation decrease and thereby ensuring sufficient recording properties, even at a linear velocity in the range of 3.49 to 8.44 m/s, a first dielectric film, phase-versatile recording film, second dielectric film, reflection film and protective film are formed on a disc substrate having formed lands, grooves and wobbling on one major surface. The recording film is made of a GeInSbTe alloy, and the reflection film is made of an AgPdCu alloy or AlCu alloy. Composition of the GeInSbTe alloy is adjusted to contain Ge in the range of 1 to 6 wt %, In in the range of 2 to 6 wt %, and control Sb/Te in the range of 2.4 to 3.0. Composition of the AgPdCu alloy is adjusted to contain Cu not more than 1.5 wt %. Groove depth is controlled in the range of 30 to 40 nm, groove width in the range of 0.27 to 0.33 &mgr;m, thickness of the first dielectric film in the range of 65 to 80 nm, thickness of the recording film in the range of 12 to 18 nm, thickness of the second dielectric film in the range of 12 to 20 nm, and thickness of the reflection film in the range of 80 to 160 nm.
    • 为了确保CAV记录/再现,同时防止抖动增加和调制降低,从而确保足够的记录性能,即使在3.49至8.44m / s范围内的线速度下,第一介电膜,相通通用记录膜,第二 电介质膜,反射膜和保护膜形成在具有在一个主表面上形成的焊盘,凹槽和摆动的光盘基板上。 记录膜由GeInSbTe合金制成,反射膜由AgPdCu合金或AlCu合金制成。 调整GeInSbTe合金的组成,使Ge含量为1〜6重量%,In为2〜6重量%,Sb / Te为2.4〜3.0。 将AgPdCu合金的组成调整为含有不超过1.5重量%的Cu。 槽深度控制在30〜40nm的范围内,槽宽度在0.27〜0.33μm的范围内,第一电介质膜的厚度在65〜80nm的范围内,记录膜的厚度在12〜 18nm,第二电介质膜的厚度在12〜20nm的范围内,反射膜的厚度在80〜160nm的范围内。