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1. 发明授权

US4608142A Method of manufacturing magneto-optic recording film 失效
标题翻译：制造磁光记录膜的方法
公开(公告)号：US4608142A
公开(公告)日：1986-08-26
申请号：US763789
申请日：1985-09-17
申请人： Manabu Gomi , Masanori Abe
发明人： Manabu Gomi , Masanori Abe
IPC分类号： C23C14/08 , C23C14/34 , G03G5/16 , G11B11/105 , H01F10/24 , G11B11/10
CPC分类号： G11B11/10591 , C23C14/08 , C23C14/3414 , G03G5/16 , G11B11/10589 , H01F10/245
摘要： In a method of manufacturing a magneto-optic recording film wherein a vertically magnetized film of a Bi-substituted rare-earth iron garnet is formed on a substrate, a target consisting of an oxide containing at least Bi atoms, Fe atoms and rare-earth element atoms is sputtered, and the atoms constituting the oxide which are released from the target by sputtering are deposited on the substrate which is held at a temperature of 700.degree. C. or lower, thereby forming the vertically magnetized film consisting of the Bi-substituted rare-earth iron garnet.With this method, a vertically magnetized film of a Bi-substituted rare-earth iron garnet having a large Bi substitution amount x, a very large Faraday rotation angle .theta..sub.F, a sufficiently large coercive force H.sub.c and a sufficiently small absorption coefficient .alpha. can be manufactured, so that a magneto-optic recording film having excellent magneto-optic recording characteristics can be manufactured. In addition, since the material of the substrate on which a magneto-optic recording film is formed can be selected from various materials, the method is extremely advantageous from the manufacturing point of view.
摘要翻译： PCT No.PCT / JP84 / 00547 Sec。 371日期：1985年9月17日 102（e）1985年9月17日PCT文件1984年11月15日PCT公布。第WO85 / 02292号公报日期：1985年5月23日。在制造磁光记录膜的方法中，其中在基底上形成Bi取代的稀土类铁石榴石的垂直磁化膜，由至少含有Bi原子的氧化物，溅射Fe原子和稀土元素原子，通过溅射从构成靶的氧化物的原子沉积在保持在700℃以下的温度的基板上，由此形成垂直磁化膜由双取代稀土铁石榴石组成。利用该方法，可以使用具有大的Bi置换量x，非常大的法拉第旋转角度θ，足够大的矫顽力Hc和充分小的吸收系数α的Bi取代稀土类铁石榴石的垂直磁化膜可以制造具有优良磁光记录特性的磁光记录膜。此外，由于可以从各种材料中选择形成有磁光记录膜的基板的材料，所以从制造的观点来看，该方法是非常有利的。

2. 发明授权

US4657782A Method of forming a rare earth-iron-garnet vertically magnetized film 失效
标题翻译：形成稀土 - 铁 - 石榴石垂直磁化膜的方法
公开(公告)号：US4657782A
公开(公告)日：1987-04-14
申请号：US840875
申请日：1986-03-18
申请人： Manabu Gomi , Masanori Abe
发明人： Manabu Gomi , Masanori Abe
IPC分类号： C01G49/00 , C01G49/02 , C04B35/26 , C04B35/40 , G11B5/84 , G11B5/842 , G11B11/10 , G11B11/105 , H01F10/24 , H01F41/22 , H01F41/24 , H01F10/02
CPC分类号： H01F10/24 , G11B11/10589 , H01F41/24
摘要： In a method of forming a rare earth-iron-garnet vertically magnetized film by applying a coating solution containing Fe.sup.3+ and rare earth ions on an amphorous substrate to form a coating film, and firing the coating film to cause thermal decomposition and crystallization of the film to form a rare earth-iron-garnet film, the coating solution contains Bi.sup.3+ and ions substitutable for Fe.sup.3+ in the garnet.
摘要翻译：在将Fe 3+和稀土离子的涂布溶液涂布在多孔基材上形成涂膜的方法中，形成稀土 - 铁 - 石榴石纵向磁化膜的方法，并对该膜进行烧成，使膜分解结晶化为了形成稀土 - 铁 - 石榴石膜，涂层溶液中含有Bi3 +和石榴石中可替代Fe3 +的离子。

3. 发明申请

US20090218565A1 RESISTANCE VARIABLE ELEMENT 有权
标题翻译：电阻可变元件
公开(公告)号：US20090218565A1
公开(公告)日：2009-09-03
申请号：US12423429
申请日：2009-04-14
申请人： Hiroyasu Kawano , Keiji Shono , Manabu Gomi , Takeshi Yokota
发明人： Hiroyasu Kawano , Keiji Shono , Manabu Gomi , Takeshi Yokota
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/56 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625
摘要： A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, an electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.
摘要翻译：提供了一种电阻可变元件，其能够通过特定机构执行双极性操作并可用作存储器。电阻可变元件具有包括电极，电极，电极之间的氧化物层和与氧化物层和电极之间的氧化物层接触的氧化物层的层压结构。通过将氧离子供给到氧化物层，并且通过从氧化物层接受氧离子，从高电阻状态到低电阻状态，氧化物层可以从低电阻状态切换到高电阻状态。通过从氧化层接收氧离子，通过向氧化层供给氧离子，氧化物层可以从低电阻状态切换到高电阻状态，从高电阻状态转变为低电阻状态。

4. 发明授权

US08188466B2 Resistance variable element 有权
标题翻译：电阻变元
公开(公告)号：US08188466B2
公开(公告)日：2012-05-29
申请号：US12423429
申请日：2009-04-14
申请人： Hiroyasu Kawano , Keiji Shono , Manabu Gomi , Takeshi Yokota
发明人： Hiroyasu Kawano , Keiji Shono , Manabu Gomi , Takeshi Yokota
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/56 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625
摘要： A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, another electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.
摘要翻译：提供了一种电阻可变元件，其能够通过特定机构执行双极性操作并可用作存储器。电阻可变元件具有包括电极，另一电极，电极之间的氧化物层和与氧化物层和电极之间的氧化物层接触的氧化物层的层压结构。通过将氧离子供给到氧化物层，并且通过从氧化物层接受氧离子，从高电阻状态到低电阻状态，氧化物层可以从低电阻状态切换到高电阻状态。通过从氧化层接收氧离子，通过向氧化层供给氧离子，氧化物层可以从低电阻状态切换到高电阻状态，从高电阻状态转变为低电阻状态。

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