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1. 发明授权

US5294816A Unit cell arrangement for emitter switched thyristor with base resistance control 失效
标题翻译：用于具有基极电阻控制的发射极开关晶闸管的单元电池布置
公开(公告)号：US5294816A
公开(公告)日：1994-03-15
申请号：US897456
申请日：1992-06-10
申请人： Mallikarjunaswamy S. Shekar , Mahalingam Nandakumar , Bantval J. Baliga
发明人： Mallikarjunaswamy S. Shekar , Mahalingam Nandakumar , Bantval J. Baliga
IPC分类号： H01L29/745 , H01L29/749 , H01L23/48 , H01L29/74 , H01L29/76
CPC分类号： H01L29/749 , H01L29/7455 , H01L2924/0002
摘要： An emitter switched thyristor with base resistance control for preventing parasitic latch-up includes a P-N-P-N main thyristor with an N.sup.+ floating emitter for MOS-gated controlled turn-on and a lateral P-channel MOSFET for shunting hole current in a second base region to a P.sup.+ diverting region electrically connected to the cathode. The P-channel MOSFET is enabled by the application of a negative gate voltage to form a P-type inversion layer between the second base region and the P.sup.+ diverter region, thus reducing the resistance between the cathode and the second base region and raising the holding current of the emitter switched thyristor to above the operating current level. The formation of an alternative current path to the cathode has the further effect of reducing the forward bias across the base-emitter junction of an adjacent parasitic thyristor to thereby prevent the sustained regenerative action of the parasitic thyristor.
摘要翻译：具有用于防止寄生闩锁的基极电阻控制的发射极开关晶闸管包括具有用于MOS门控控制导通的N +浮置发射极的PNPN主晶闸管和用于在第二基极区中的分流电流的侧向P沟道MOSFET P +转移区电连接到阴极。 P沟道MOSFET通过施加负栅极电压来使能，以在第二基极区域和P +转移区域之间形成P型反型层，从而减小阴极和第二基极区域之间的电阻并且提高保持发射极开关晶闸管的电流高于工作电流电平。形成到阴极的替代电流路径具有减小相邻寄生晶闸管的基极 - 发射极结两端的正向偏压的进一步的效果，从而防止寄生晶闸管的持续再生作用。

2. 发明授权

US5293054A Emitter switched thyristor without parasitic thyristor latch-up susceptibility 失效
标题翻译：发射极开关晶闸管无寄生晶闸管闭锁敏感性
公开(公告)号：US5293054A
公开(公告)日：1994-03-08
申请号：US980466
申请日：1992-11-23
申请人： Mallikarjunaswamy S. Shekar , Bantval J. Baliga
发明人： Mallikarjunaswamy S. Shekar , Bantval J. Baliga
IPC分类号： H01L29/745 , H01L29/749 , H01L29/080 , H01L29/520
CPC分类号： H01L29/7455 , H01L29/749
摘要： An emitter switched thyristor without parasitic thyristor latch-up susceptibility includes a thyristor having an anode region, a first base region, a second base region in the first base region and an emitter region of first conductivity type in the second base region. An electrical connection is provided between the emitter region and the cathode contact by a field effect transistor in the first base region. The transistor is positioned adjacent the second base region and includes a source electrically connected to the emitter region by a metal strap on the surface of the substrate. The drain of the transistor is electrically connected to the cathode contact and has a conductivity type opposite the conductivity type of the first base region. Accordingly, the cathode contact and anode contact are not separated by a four layer parasitic thyristor. Parasitic latch-up operation is thereby eliminated.
摘要翻译：没有寄生晶闸管闩锁敏感性的发射极开关晶闸管包括具有第一基极区域中的阳极区域，第一基极区域，第二基极区域和第二基极区域中的第一导电类型的发射极区域的晶闸管。通过第一基极区域中的场效应晶体管在发射极区域和阴极接触点之间提供电连接。晶体管位于第二基极区域附近，并且包括通过衬底表面上的金属带电连接到发射极区域的源极。晶体管的漏极电连接到阴极接触并且具有与第一基极区域的导电类型相反的导电类型。因此，阴极接触和阳极接触不被四层寄生晶闸管分离。从而消除了寄生闩锁操作。

3. 发明授权

US5319222A MOS gated thyristor having on-state current saturation capability 失效
标题翻译： MOS门控晶闸管具有导通电流饱和能力
公开(公告)号：US5319222A
公开(公告)日：1994-06-07
申请号：US875933
申请日：1992-04-29
申请人： Mallikarjunaswamy S. Shekar , Bantval J. Baliga
发明人： Mallikarjunaswamy S. Shekar , Bantval J. Baliga
IPC分类号： H01L29/74 , H01L29/739 , H01L29/745 , H01L29/749 , H01L29/78 , H01L29/100 , H01L29/600 , H01L29/740
CPC分类号： H01L29/7455 , H01L29/749
摘要： An emitter switched thyristor structure providing on-state current saturation capability is disclosed herein. The thyristor structure includes anode and cathode electrodes, and a remote electrode connected to the cathode electrode. A multi-layer body of semiconductor material has a first surface and includes regenerative and non-regenerative portions each operatively coupled between the anode and cathode electrodes. The regenerative portion includes adjacent first, second, third and fourth regions of alternating conductivity type arranged respectively in series, wherein the remote electrode is in electrical contact with the second region and the anode electrode is in electrical contact with the fourth region. The emitter-switched thyristor is turned on by applying an enabling voltage to an insulated gate electrode disposed adjacent the first surface such that a conductive channel is created in the non-regenerative portion via modulation of the conductivity therein. The device may be operated in a saturation mode by reducing the applied gate voltage such that the conductive channel in the non-regenerative portion becomes pinched off. Termination of regenerative operation is initiated by applying a non-enabling voltage to the gate electrode so as to extinguish channel conductivity within the non-regenerative portion as well as within the third region of the regenerative portion. The remote electrode collects any charges remaining in the second region of the regenerative portion subsequent to application of the non-enabling voltage and thereby expedites turn-off of the thyristor device.
摘要翻译：本文公开了提供导通电流饱和能力的发射极开关晶闸管结构。晶闸管结构包括阳极和阴极电极以及连接到阴极的远程电极。半导体材料的多层体具有第一表面，并且包括各自可操作地耦合在阳极和阴极之间的再生和非再生部分。再生部分包括分别串联布置的相邻的交替导电类型的第一，第二，第三和第四区域，其中远程电极与第二区域电接触，并且阳极电极与第四区域电接触。通过向邻近第一表面设置的绝缘栅电极施加使能电压来使发射极开关晶闸管导通，使得通过其中的电导率的调制在非再生部分中产生导电沟道。该装置可以通过减小所施加的栅极电压而以饱和模式操作，使得非再生部分中的导电通道被夹断。通过向栅电极施加非使能电压，从而消除非再生部分内部以及再生部分的第三区域内的沟道导通性，开始再生操作的终止。远程电极在施加非使能电压之后收集残留在再生部分的第二区域中的任何电荷，从而加速晶闸管器件的关断。

4. 发明授权

US5317171A MOS gated thyristor with remote turn-off electrode 失效
标题翻译： MOS门控晶闸管与远端关断电极
公开(公告)号：US5317171A
公开(公告)日：1994-05-31
申请号：US875742
申请日：1992-04-29
申请人： Mallikarjunaswamy S. Shekar , Bantval J. Baliga
发明人： Mallikarjunaswamy S. Shekar , Bantval J. Baliga
IPC分类号： H01L29/74 , H01L29/739 , H01L29/745 , H01L29/749 , H01L29/78 , H01L29/100 , H01L29/600 , H01L29/740
CPC分类号： H01L29/7455
摘要： An emitter-switched thyristor structure includes a remote turn-off electrode for reducing turn-off time and increasing maximum controllable operating current. The switched thyristor structure further includes anode and cathode electrodes, with the remote electrode being connected to the cathode electrode. A multi-layer body of semiconductor material has a first surface, as well as regenerative and non-regenerative portions each operatively coupled between the anode and cathode electrodes. The regenerative portion includes adjacent first, second, third and fourth regions of alternating conductivity type arranged respectively in series. Electrical contacts exist between the remote electrode and the second region, as well as between the anode electrode and the fourth region. The thyristor is turned on by applying an enabling voltage to an insulated gate electrode disposed adjacent the first surface such that a conductive channel is created in the regenerative portion via modulation of the conductivity therein. Similarly, the termination of regenerative operation is initiated by applying a non-enabling voltage to the gate electrode. The remote electrode collects any charges remaining in the second region of the regenerative portion subsequent to application of the non-enabling voltage and thereby expedites turn off of the emitter-switched thyristor.
摘要翻译：发射极开关晶闸管结构包括用于减少关断时间并增加最大可控工作电流的远程关断电极。开关晶闸管结构还包括阳极和阴极电极，远程电极连接到阴极电极。半导体材料的多层体具有第一表面，以及每个可操作地耦合在阳极和阴极之间的再生和非再生部分。再生部分包括分别串联设置的相邻的交替导电类型的第一，第二，第三和第四区域。在远程电极和第二区域之间以及阳极电极和第四区域之间存在电接触。通过对邻近第一表面设置的绝缘栅电极施加使能电压来使晶闸管导通，从而通过调节其中的导电率在再生部分中产生导电通道。类似地，通过向栅电极施加非使能电压来启动再生操作的终止。远程电极在施加非使能电压之后收集残留在再生部分的第二区域中的任何电荷，从而加速关闭发射极开关晶闸管。

5. 发明授权

US5471075A Dual-channel emitter switched thyristor with trench gate 失效
标题翻译：双沟道发射极开关晶闸管与沟槽栅极
公开(公告)号：US5471075A
公开(公告)日：1995-11-28
申请号：US249898
申请日：1994-05-26
申请人： Mallikarjunaswamy S. Shekar , B. Jayant Baliga , Jacek Korec
发明人： Mallikarjunaswamy S. Shekar , B. Jayant Baliga , Jacek Korec
IPC分类号： H01L29/08 , H01L29/745 , H01L29/749 , H01L29/74 , H01L31/111
CPC分类号： H01L29/749 , H01L29/0839 , H01L29/7455
摘要： A semiconductor switching device includes a plurality of adjacent and parallel-connected switching cells in a semiconductor substrate. Each cell includes a thyristor having a floating emitter region and a trench-gate field effect transistor (TFET) for providing turn-on and turn-off control of the thyristor. In one embodiment of the switching device, parasitic thyristor latch-up is suppressed by using a dual-channel TFET which forms both inversion-layer and accumulation-layer channel connections in series between respective floating emitter regions and the cathode contact. In another embodiment, parasitic thyristor latch-up is prevented by joining floating emitter regions of a pair of adjacent cells to thereby eliminate a parasitic P-N-P-N path between the anode and cathode contacts. According to this second embodiment, a dual-channel TFET is preferably used to form a separate first conductivity type inversion-layer channel adjacent a first sidewall of the trench and a second conductivity type inversion-layer channel adjacent a second opposing sidewall of the trench. These channels provide the necessary electrical connections for both gated turn-on and turn-off control.
摘要翻译：半导体开关器件包括在半导体衬底中的多个相邻和并联连接的开关单元。每个单元包括具有浮动发射极区域的晶闸管和用于提供晶闸管的导通和截止控制的沟槽栅极场效应晶体管（TFET）。在开关器件的一个实施例中，通过使用在相应的浮置发射极区域和阴极触点之间串联形成反转层和堆叠层沟道连接的双沟道TFET来抑制寄生晶闸管闩锁。在另一个实施例中，通过连接一对相邻单元的浮置发射极区域来防止寄生晶闸管闩锁，从而消除阳极和阴极触点之间的寄生P-N-P-N路径。根据该第二实施例，优选地使用双沟道TFET来形成与沟槽的第一侧壁相邻的单独的第一导电类型反型层沟道和与沟槽的第二相对侧壁相邻的第二导电类型反型层沟道。这些通道为门控开启和关断控制提供必要的电气连接。

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