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    • 8. 发明授权
    • Dry etching system
    • 干蚀刻系统
    • US5718796A
    • 1998-02-17
    • US638470
    • 1996-04-26
    • Tetsuya Yamane
    • Tetsuya Yamane
    • C23F4/00H01J37/32H01L21/302H01L21/3065H01L21/00
    • H01J37/32467H01J37/32935H01J37/32963
    • An etching system including a chamber, lower and upper electrodes provided in the chamber, a plasma light monitoring window provided in a side wall of the chamber, and an endpoint detecting device mounted outside the plasma light monitoring window. The plasma light monitoring window may be formed of high-purity aluminum oxide (Al.sub.2 O.sub.3) as a transparent ceramic, so that plasma light generated in the chamber can be efficiently transmitted through the plasma light monitoring window to the endpoint detecting device. Accordingly, even when the plasma light monitoring window is etched, its transparency is not lost. Furthermore, since the content of impurity in the window is low, contamination of an object to be etched with the impurity can be suppressed.
    • 一种蚀刻系统,包括设置在室中的室,下电极和上电极,设置在室的侧壁中的等离子体光监测窗口,以及安装在等离子体光监测窗口外部的端点检测装置。 等离子体光监测窗口可以由作为透明陶瓷的高纯度氧化铝(Al 2 O 3)形成,使得在室中产生的等离子体光可以有效地通过等离子体光监测窗口传输到端点检测装置。 因此,即使蚀刻等离子体光监视窗,也不会损失其透明性。 此外,由于窗口中的杂质含量低,可以抑制用杂质腐蚀的物体的污染。