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1. 发明申请

US20110233779A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233779A1
公开(公告)日：2011-09-29
申请号：US13052367
申请日：2011-03-21
申请人： Makoto Wada , Yosuke Akimoto , Yuichi Yamazaki , Masayuki Katagiri , Noriaki Matsunaga , Tadashi Sakai , Naoshi Sakuma
发明人： Makoto Wada , Yosuke Akimoto , Yuichi Yamazaki , Masayuki Katagiri , Noriaki Matsunaga , Tadashi Sakai , Naoshi Sakuma
IPC分类号： H01L23/532 , H01L21/28 , B82Y99/00 , B82Y40/00
CPC分类号： H01L23/5226 , B82Y10/00 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76876 , H01L21/76879 , H01L23/53238 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.
摘要翻译：根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。

2. 发明申请

US20110057322A1 CARBON NANOTUBE INTERCONNECT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：碳纳米管互连及其制造方法
公开(公告)号：US20110057322A1
公开(公告)日：2011-03-10
申请号：US12876669
申请日：2010-09-07
申请人： Noriaki MATSUNAGA , Makoto Wada , Yosuke Akimoto , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
发明人： Noriaki MATSUNAGA , Makoto Wada , Yosuke Akimoto , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76831 , H01L21/76834 , H01L21/7684 , H01L21/76849 , H01L21/76879 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2224/13
摘要： According to one embodiment, a carbon nanotube interconnect includes a first interconnection layer, an interlayer dielectric film, a second interconnection layer, a contact hole, a plurality of carbon nanotubes and a film. The interlayer dielectric film is formed on the first interconnection layer. The second interconnection layer is formed on the interlayer dielectric film. The contact hole is formed in the interlayer dielectric film between the first interconnection layer and the second interconnection layer. The carbon nanotubes are formed in the contact hole. The carbon nanotubes have a first end connected to the first interconnection layer and a second end connected to the second interconnection layer. The film is formed between the interlayer dielectric film and the second interconnection layer. The film has a portion filled between the second ends of the carbon nanotubes.
摘要翻译：根据一个实施例，碳纳米管互连包括第一互连层，层间电介质膜，第二互连层，接触孔，多个碳纳米管和膜。层间绝缘膜形成在第一互连层上。第二互连层形成在层间绝缘膜上。接触孔形成在第一互连层和第二互连层之间的层间绝缘膜中。碳纳米管形成在接触孔中。碳纳米管具有连接到第一互连层的第一端和连接到第二互连层的第二端。该膜形成在层间绝缘膜和第二互连层之间。该膜具有填充在碳纳米管的第二端之间的部分。

3. 发明授权

US08358008B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08358008B2
公开(公告)日：2013-01-22
申请号：US12726520
申请日：2010-03-18
申请人： Makoto Wada , Noriaki Matsunaga , Yosuke Akimoto
发明人： Makoto Wada , Noriaki Matsunaga , Yosuke Akimoto
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/76807 , H01L21/76843 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/528 , H01L23/53276 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to one embodiment includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate and containing a wiring trench; a first catalyst layer provided directly or via another member on side and bottom surfaces of the wiring trench; and a first graphene layer provided in the wiring trench so as to be along the side and bottom surface of the wiring trench, the first graphene layer being provided on the first catalyst layer so as to be in contact with the first catalyst layer.
摘要翻译：根据一个实施例的半导体器件包括：半导体衬底; 绝缘膜，设置在所述半导体基板上并且包含布线沟槽; 第一催化剂层，直接地或经由布线沟槽的侧表面和底表面上的另一个构件提供; 以及设置在所述布线沟槽中以沿着所述布线沟槽的侧面和底面的第一石墨烯层，所述第一石墨烯层设置在所述第一催化剂层上以与所述第一催化剂层接触。

4. 发明申请

US20110006425A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110006425A1
公开(公告)日：2011-01-13
申请号：US12726520
申请日：2010-03-18
申请人： Makoto Wada , Noriaki Matsunaga , Yosuke Akimoto
发明人： Makoto Wada , Noriaki Matsunaga , Yosuke Akimoto
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/76807 , H01L21/76843 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/528 , H01L23/53276 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to one embodiment includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate and containing a wiring trench; a first catalyst layer provided directly or via another member on side and bottom surfaces of the wiring trench; and a first graphene layer provided in the wiring trench so as to be along the side and bottom surface of the wiring trench, the first graphene layer being provided on the first catalyst layer so as to be in contact with the first catalyst layer.
摘要翻译：根据一个实施例的半导体器件包括：半导体衬底; 绝缘膜，设置在所述半导体基板上并且包含布线沟槽; 第一催化剂层，直接地或经由布线沟槽的侧表面和底表面上的另一个构件提供; 以及设置在所述布线沟槽中以沿着所述布线沟槽的侧面和底面的第一石墨烯层，所述第一石墨烯层设置在所述第一催化剂层上以与所述第一催化剂层接触。

5. 发明授权

US09699738B2 Wireless communication system, base station apparatus, mobile station apparatus, control method of wireless communication system, control program of base station apparatus, and control program of mobile station apparatus 有权
公开(公告)号：US09699738B2
公开(公告)日：2017-07-04
申请号：US13504897
申请日：2010-10-04
申请人： Wataru Ouchi , Shoichi Suzuki , Yosuke Akimoto
发明人： Wataru Ouchi , Shoichi Suzuki , Yosuke Akimoto
IPC分类号： H04W52/04 , H04W72/04 , H04L5/00 , H04W52/34 , H04L27/26
CPC分类号： H04W52/04 , H04L5/001 , H04L5/0051 , H04L5/0053 , H04L27/2614 , H04W52/34 , H04W72/0473
摘要： A base station apparatus communicates with a mobile station apparatus transmitting a data signal and a reference signal for channel estimation. The base station includes: a simultaneous transmission setting part which sets simultaneous transmission control information indicating whether or not to enable simultaneous transmission of the data signal and the reference signal, a transmission section which transmits the set simultaneous transmission control information to the mobile station apparatus; and a radio resource control section which determines whether or not to enable simultaneous transmission of the data signal and the reference signal on the basis of a power headroom which is notified from the mobile station apparatus, the headroom being a difference between the maximum transmit power value of the mobile station apparatus and a prescribed power value estimated for uplink transmission.

6. 发明授权

US09553708B2 Communication system, terminal, and base station 有权
标题翻译：通信系统，终端和基站
公开(公告)号：US09553708B2
公开(公告)日：2017-01-24
申请号：US14236472
申请日：2012-08-02
申请人： Kimihiko Imamura , Wataru Ouchi , Yosuke Akimoto , Toshizo Nogami , Daiichiro Nakashima , Kazuyuki Shimezawa , Shoichi Suzuki , Yasuyuki Kato , Katsunari Uemura
发明人： Kimihiko Imamura , Wataru Ouchi , Yosuke Akimoto , Toshizo Nogami , Daiichiro Nakashima , Kazuyuki Shimezawa , Shoichi Suzuki , Yasuyuki Kato , Katsunari Uemura
IPC分类号： H04L5/00 , H04W24/10 , H04B17/24 , H04B17/382 , H04W52/12 , H04W52/14 , H04W52/24 , H04B17/318
CPC分类号： H04L5/0057 , H04B17/24 , H04B17/318 , H04B17/382 , H04W24/10 , H04W52/12 , H04W52/146 , H04W52/246
摘要： A terminal that performs a reference signal received power (RSRP) measurement of a channel-state information reference signal, on the basis of a second measurement target configuration in a case where the second measurement target configuration is contained in a measurement object configuration, where the second measurement target configuration containing at least a first index. In addition, the terminal transmits a first measurement result with a second index, where the first measurement result includes a reference signal received power of a channel-state information reference signal based on the second measurement target configuration.
摘要翻译：在第二测量对象配置被包含在测量对象配置中的情况下，基于第二测量目标配置来执行信道状态信息参考信号的参考信号接收功率（RSRP）测量的终端，其中第二测量目标配置包含至少第一索引。此外，终端以第二指标发送第一测量结果，其中第一测量结果包括基于第二测量目标配置的信道状态信息参考信号的参考信号接收功率。

7. 发明授权

US09232535B2 Wireless communication system, base station apparatus, mobile station apparatus, wireless communication method and integrated circuit 有权
标题翻译：无线通信系统，基站装置，移动台装置，无线通信方式及集成电路
公开(公告)号：US09232535B2
公开(公告)日：2016-01-05
申请号：US13702620
申请日：2011-05-30
申请人： Wataru Ouchi , Tatsushi Aiba , Yosuke Akimoto , Shoichi Suzuki
发明人： Wataru Ouchi , Tatsushi Aiba , Yosuke Akimoto , Shoichi Suzuki
IPC分类号： H04J3/12 , H04W72/14 , H04L5/00 , H04L25/02
CPC分类号： H04L5/0048 , H04B7/208 , H04L1/1671 , H04L5/001 , H04L5/0044 , H04L5/0053 , H04L25/0204 , H04L25/0224 , H04W72/042 , H04W72/14
摘要： It is possible to perform effective communication based on an A-SRS transmitted from a mobile station apparatus. A base station apparatus: notifies the mobile station apparatus of control information for setting, to the mobile station apparatus, whether to transmit a first sounding reference signal assigned in a physical uplink shared channel resource or to transmit a second sounding reference signal assigned in a resource different from the physical uplink shared channel resource; and notifies the mobile station apparatus of an uplink grant including an indication of transmission of a sounding reference signal. When receiving the indication of transmission of the sounding reference signal included in the uplink grant, the mobile station apparatus transmits the first sounding reference signal to the base station apparatus when the transmission of the first sounding reference signal is set by transmission control information, and transmits the second sounding reference signal to the base station apparatus when the transmission of the second sounding reference signal is set by the transmission control information.
摘要翻译：可以基于从移动站装置发送的A-SRS进行有效的通信。基站装置：向移动台装置通知控制信息，向移动台装置发送是否发送分配在物理上行链路共享信道资源中的第一探测参考信号，或者发送分配给资源的第二探测参考信号与物理上行链路共享信道资源不同; 并且向移动台装置通知包括发声参照信号的发送指示的上行链路许可。当接收到上行链路授权中包含的探测参考信号的发送指示时，移动站装置在通过发送控制信息设定第一探测参考信号的发送时，向基站装置发送第一探测参考信号，当通过发送控制信息设定第二探测参考信号的发送时，向基站装置发送第二探测参考信号。

8. 发明授权

US08963189B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08963189B2
公开(公告)日：2015-02-24
申请号：US13052250
申请日：2011-03-21
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
IPC分类号： H01L33/00 , H01L33/62 , H01L27/15 , H01L33/48
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱绝缘层。半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。

9. 发明授权

US08934429B2 Wireless communication system, base station apparatus, mobile station apparatus, wireless communication method and integrated circuit 有权
标题翻译：无线通信系统，基站装置，移动台装置，无线通信方式及集成电路
公开(公告)号：US08934429B2
公开(公告)日：2015-01-13
申请号：US13458831
申请日：2012-04-27
申请人： Shoichi Suzuki , Yosuke Akimoto
发明人： Shoichi Suzuki , Yosuke Akimoto
IPC分类号： H04W72/04 , H04L5/00 , H04B7/04 , H04B7/06
CPC分类号： H04W72/048 , H04B7/0413 , H04B7/0697 , H04L5/0023 , H04L5/0048 , H04L5/0053 , H04L5/0091 , H04W72/042
摘要： In a wireless communication system a base station apparatus and a mobile station apparatus communicate with each other. The base station sets the number of spatial multiplexing sequences (rank) of data being used by the mobile station when transmitting a PUSCH, further sets orthogonal resources used by the mobile station for the same number of reference signals as the set number of spatial multiplexing sequences which are transmitted together with the PUSCH, and transmits downlink control information indicating the number of spatial multiplexing sequences and information indicating the orthogonal resources for the reference signals. The mobile station receives the downlink control information, selects orthogonal resources to respectively apply to the reference signals, applies the selected orthogonal resources to generate the reference signals, and transmits the generated reference signals to the base station apparatus.
摘要翻译：在无线通信系统中，基站装置和移动站装置进行通信。基站设置发送PUSCH时由移动台使用的数据的空间复用序列（秩）的数量，进一步设置移动台使用与正常资源相同数量的参考信号的正交资源作为设定数量的空间多路复用序列与PUSCH一起发送，并且发送指示空间复用序列的数量的下行链路控制信息和指示用于参考信号的正交资源的信息。移动站接收下行链路控制信息，选择正交资源分别应用于参考信号，应用所选择的正交资源生成参考信号，并将生成的参考信号发送到基站装置。

10. 发明授权

US08772810B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08772810B2
公开(公告)日：2014-07-08
申请号：US13601487
申请日：2012-08-31
申请人： Yoshiaki Sugizaki , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
发明人： Yoshiaki Sugizaki , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/647 , H01L25/0753 , H01L33/0095 , H01L33/20 , H01L33/385 , H01L33/502 , H01L33/505 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一面，第二面，侧面和发光层的半导体层; 设置在所述第二面上的p侧电极; 设置在所述侧面上的n侧电极; 设置在p侧电极上的第一p侧金属层; 设置在n侧电极的周围的第一n侧金属层; 设置在第一n侧金属层的第二面侧的面上的第一绝缘层; 第二p侧金属层，与第一p侧金属层上的第一p侧金属层连接，并且从第一p侧金属层延伸到第一绝缘层; 以及设置在半导体层的周边区域中的第一n侧金属层的第二面侧的面上的第二n侧金属层。

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