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1. 发明授权

US07731801B2 Semiconductor wafer treatment method and apparatus therefor 有权
标题翻译：半导体晶片处理方法及其装置
公开(公告)号：US07731801B2
公开(公告)日：2010-06-08
申请号：US11213809
申请日：2005-08-30
申请人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
发明人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
IPC分类号： B08B6/00 , C25F1/00 , C25F3/30
CPC分类号： H01L21/02052 , B08B3/04 , B08B2203/005 , H01L21/304
摘要： In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.
摘要翻译：在臭氧水处理工艺中，用包含臭氧的第一超纯水处理硅晶片。第一超纯水通过紫外线灭菌法精制。第一超纯水的总有机碳含量大于1μg/升且不大于20μg/升，从而获得预定清洁度的硅晶片。在超纯水冲洗过程（包括所需的化学溶液清洗过程）中，使用具有比第一超纯水低的TOC值的第二超纯水处理硅晶片。第二超纯水通过紫外线氧化法精制，其总有机碳含量为1μg/升以下。因此，获得了预定清洁度的硅晶片。

2. 发明申请

US20060042654A1 Semiconductor wafer treatment method and apparatus therefor 有权
标题翻译：半导体晶片处理方法及其装置
公开(公告)号：US20060042654A1
公开(公告)日：2006-03-02
申请号：US11213809
申请日：2005-08-30
申请人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
发明人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
IPC分类号： C23G1/00 , B08B3/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B2203/005 , H01L21/304
摘要： In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.
摘要翻译：在臭氧水处理工艺中，用包含臭氧的第一超纯水处理硅晶片。第一超纯水通过紫外线灭菌法精制。第一超纯水的总有机碳含量大于1mug /升且不超过20mug /升，从而获得了预定清洁度的硅晶片。在超纯水冲洗过程（包括所需的化学溶液清洗过程）中，使用具有比第一超纯水低的TOC值的第二超纯水处理硅晶片。第二超纯水通过紫外线氧化法精制，并且包括浓度为1杯/升或更低的总有机碳含量。因此，获得了预定清洁度的硅晶片。

3. 发明授权

US07678200B2 Technique on ozone water for use in cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的臭氧水技术
公开(公告)号：US07678200B2
公开(公告)日：2010-03-16
申请号：US10522717
申请日：2003-08-11
申请人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
发明人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
IPC分类号： B08B3/00
CPC分类号： C11D7/5022 , B08B3/02 , B08B3/08 , B08B2203/005 , C02F1/68 , C02F1/78 , C02F2103/04 , C02F2103/346 , C11D3/3942 , C11D11/0047 , H01L21/02052
摘要： An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a trace amount of the organic carbon. The above ultra-pure ozone water exhibits an increased half-life period of ozone, and thus, when used in cleaning a semiconductor substrate, allows the cleaning with an ozone water having an enhanced content of ozone, which results in exhibiting an enhanced cleaning capability and cleaning efficiency for an organic impurities, metallic impurities and the like adhered to the substrate, due to enhanced oxidizing action of ozone.
摘要翻译：一种超纯臭氧水，其包含能够抑制臭氧半衰期降低的有机碳的量的增加; 以及生产超纯臭氧水的方法，其包括将含有上述有机碳的有机溶剂加入到含微量有机碳的超纯臭氧水中。上述超纯臭氧水的臭氧的半衰期延长，因此，当用于清洗半导体衬底时，可以用臭氧含量较高的臭氧水进行清洁，从而表现出增强的清洁能力以及由于臭氧的氧化作用增强而附着在基板上的有机杂质，金属杂质等的清洗效率。

4. 发明申请

US20060154837A1 Technique on ozone water for use in cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的臭氧水技术
公开(公告)号：US20060154837A1
公开(公告)日：2006-07-13
申请号：US10522717
申请日：2003-08-11
申请人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
发明人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
IPC分类号： C23G1/00 , C11D7/32
CPC分类号： C11D7/5022 , B08B3/02 , B08B3/08 , B08B2203/005 , C02F1/68 , C02F1/78 , C02F2103/04 , C02F2103/346 , C11D3/3942 , C11D11/0047 , H01L21/02052
摘要： An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a trace amount of the organic carbon. The above ultra-pure ozone water exhibits an increased half-life period of ozone, and thus, when used in cleaning a semiconductor substrate, allows the cleaning with an ozone water having an enhanced content of ozone, which results in exhibiting an enhanced cleaning capability and cleaning efficiency for an organic impurities, metallic impurities and the like adhered to the substrate, due to enhanced oxidizing action of ozone.
摘要翻译：一种超纯臭氧水，其包含能够抑制臭氧半衰期降低的有机碳的量的增加; 以及生产超纯臭氧水的方法，其包括将含有上述有机碳的有机溶剂加入到含微量有机碳的超纯臭氧水中。上述超纯臭氧水的臭氧的半衰期延长，因此，当用于清洗半导体衬底时，可以用臭氧含量较高的臭氧水进行清洁，从而表现出增强的清洁能力以及由于臭氧的氧化作用增强而附着在基板上的有机杂质，金属杂质等的清洗效率。

5. 发明授权

US07648576B2 Epitaxial wafer and method for producing same 有权
标题翻译：外延晶片及其制造方法
公开(公告)号：US07648576B2
公开(公告)日：2010-01-19
申请号：US10596280
申请日：2004-12-10
申请人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
发明人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
IPC分类号： C30B5/00 , H01L21/311
CPC分类号： H01L21/02052 , H01L21/02008 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/302 , Y10S438/905 , Y10S438/913
摘要： After cleaning the front and back sides of a silicon wafer with a liquid SC-1 and liquid SC-2, the front and back sides of the silicon wafer are cleaned with an HF solution to be water-repellent surfaces. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced stacking faults after formation of the epitaxial layer and occurrence of cloud on the back side. Alternatively, the front and back sides of a silicon wafer are cleaned with the liquid SC-1 and liquid SC-2, and then the back side of the silicon wafer is cleaned with an HF solution to be a water-repellent surface while the front side is cleaned with purified water to be a hydrophilic surf ace. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced mounds on the front side and occurrence of cloud on the back side.
摘要翻译：用液体SC-1和液体SC-2清洗硅晶片的正面和背面后，用HF溶液清洗硅晶片的正面和背面以防水表面。之后，在正面形成硅外延层。因此，在形成外延层之后可以减少堆垛层错，并且在背面发生云。或者，用液体SC-1和液体SC-2清洗硅晶片的正面和背面，然后用HF溶液将硅晶片的背面清洗成防水表面，而前面侧面用净化水清洗成亲水冲浪。之后，在正面形成硅外延层。因此，前侧可能有减少的土堆和背面出现云。

6. 发明申请

US20070093072A1 Epitaxial wafer and method for producing same 有权
标题翻译：外延晶片及其制造方法
公开(公告)号：US20070093072A1
公开(公告)日：2007-04-26
申请号：US10596280
申请日：2004-12-10
申请人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
发明人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
IPC分类号： C23G1/00 , H01L21/31
CPC分类号： H01L21/02052 , H01L21/02008 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/302 , Y10S438/905 , Y10S438/913
摘要： After cleaning the front and back sides of a silicon wafer with a liquid SC-1 and liquid SC-2, the front and back sides of the silicon wafer are cleaned with an HF solution to be water-repellent surfaces. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced stacking faults after formation of the epitaxial layer and occurrence of cloud on the back side. Alternatively, the front and back sides of a silicon wafer are cleaned with the liquid SC-1 and liquid SC-2, and then the back side of the silicon wafer is cleaned with an HF solution to be a water-repellent surface while the front side is cleaned with purified water to be a hydrophilic surf ace. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced mounds on the front side and occurrence of cloud on the back side.
摘要翻译：用液体SC-1和液体SC-2清洗硅晶片的正面和背面后，用HF溶液清洗硅晶片的正面和背面以防水表面。之后，在正面形成硅外延层。因此，在形成外延层之后可以减少堆垛层错，并且在背面发生云。或者，用液体SC-1和液体SC-2清洗硅晶片的正面和背面，然后用HF溶液将硅晶片的背面清洗成防水表面，而前面侧面用净化水清洗成亲水冲浪。之后，在正面形成硅外延层。因此，前侧可能有减少的土堆和背面出现云。

7. 发明授权

US08273623B2 Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor 有权
标题翻译：具有电容均匀性结构的集成高压电容器及其制造方法
公开(公告)号：US08273623B2
公开(公告)日：2012-09-25
申请号：US13396159
申请日：2012-02-14
申请人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
发明人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
IPC分类号： H01L21/8242
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
摘要翻译：本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。集成的高压电容器以及其它特征包括位于半导体衬底（105）上方或半导体衬底（105）中的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分绝缘体（130）包括层间介电层（135,138,143或148）。集成高压电容器还包括至少部分位于绝缘体（130）内的电容均匀性结构（910）和位于绝缘体（130）上方的第二电容器板（160）。

8. 发明授权

US08114731B2 Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor 有权
公开(公告)号：US08114731B2
公开(公告)日：2012-02-14
申请号：US12276507
申请日：2008-11-24
申请人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
发明人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
IPC分类号： H01L21/8244
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).

9. 发明申请

US20110166131A1 SUBSTITUTED PYRROLIDINE DERIVATIVE 失效
标题翻译：取代吡咯烷衍生物
公开(公告)号：US20110166131A1
公开(公告)日：2011-07-07
申请号：US13045567
申请日：2011-03-11
申请人： Hisashi TAKAHASHI , Junichi Kuroyanagi , Rie Miyauchi , Masatoshi Nagamochi , Makoto Takemura , Isao Hayakawa
发明人： Hisashi TAKAHASHI , Junichi Kuroyanagi , Rie Miyauchi , Masatoshi Nagamochi , Makoto Takemura , Isao Hayakawa
IPC分类号： A61K31/5383 , C07D498/06 , A61P31/04
CPC分类号： C07D401/04 , C07D498/06
摘要： A quinolone antibacterial compound, or a salt or hydrate of the compound, for the treatment of infectious diseases, which exhibit potent antibacterial activity and higher selective toxicity against Gram-positive and Gram-negative bacteria, which do not cause side effects (e.g., convulsion), which exhibit higher safety, and which has a structure of formula (I):
摘要翻译：用于治疗感染性疾病的喹诺酮类抗菌化合物或化合物的盐或水合物，其对革兰氏阳性和革兰氏阴性菌具有强力的抗菌活性和较高的选择性毒性，其不引起副作用（例如惊厥），其具有更高的安全性，并且具有式（I）的结构：

10. 发明授权

US07960254B2 Manufacturing method for epitaxial wafer 有权
标题翻译：外延晶圆的制造方法
公开(公告)号：US07960254B2
公开(公告)日：2011-06-14
申请号：US12645744
申请日：2009-12-23
申请人： Naoyuki Wada , Makoto Takemura
发明人： Naoyuki Wada , Makoto Takemura
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/4411 , C23C16/481 , C23C24/082 , H01L21/02532 , H01L21/02579
摘要： To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion.
摘要翻译：为了提供一种外延晶片的制造方法，其能够缓和由于晶片和基座之间的粘附而引起的背面的变形，从而防止由于升降销引起的平坦度的降低。根据本发明的外延晶片的制造方法包括：在其背面形成有氧化膜的氧化膜形成工序; 通过部分去除氧化膜来提供暴露半导体晶片的背面的疏水部分的蚀刻步骤; 放置半导体晶片的晶片放置步骤; 以及在半导体晶片的主表面上生长外延层的外延生长步骤; 并且设置在基座的底面上的圆上的提升销安装圈的直径小于疏水部分的直径。

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