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1. 发明申请

US20080063700A1 Support Accumulating In Injured Part In Vascular Channel 审中-公开
标题翻译：支持血管通道受累部位累积
公开(公告)号：US20080063700A1
公开(公告)日：2008-03-13
申请号：US10586688
申请日：2005-01-24
申请人： Makoto Suematsu , Shinji Takeoka
发明人： Makoto Suematsu , Shinji Takeoka
IPC分类号： A61K9/127
CPC分类号： A61K9/1272
摘要： The present invention provides a carrier that accumulates on a damaged tissue and that functions as a drug for controlling a platelet function, a drug delivery method using the carrier and a pharmaceutical composition comprising the carrier. The present invention also provides a carrier with a non-cationic surface, a drug transporter and a pharmaceutical composition comprising the carrier.
摘要翻译：本发明提供了一种载体，其累积在损伤的组织上，并且起到控制血小板功能的药物的作用，使用载体的药物递送方法和包含载体的药物组合物。本发明还提供了具有非阳离子表面的载体，药物转运蛋白和包含载体的药物组合物。

2. 发明申请

US20180179352A1 ULTRA-THIN POLYMER FILM AND POROUS ULTRA-THIN POLYMER FILM 审中-公开
公开(公告)号：US20180179352A1
公开(公告)日：2018-06-28
申请号：US15902501
申请日：2018-02-22
申请人： Shinji Takeoka , Nanotheta Co, Ltd. , Toray Industries, Inc.
发明人： Shinji Takeoka , Akihiro Saito , Hong Zhang , Natsuki Takamizawa
IPC分类号： C08J5/18 , B29C67/20 , B01D67/00 , B01D69/02 , B01D69/14 , B29C41/12 , B82Y40/00
CPC分类号： C08J5/18 , B01D67/003 , B01D67/009 , B01D69/02 , B01D69/141 , B01D2323/18 , B01D2325/02 , B01D2325/04 , B01D2325/06 , B29C41/12 , B29C67/202 , B82Y40/00 , C08J2201/04 , C08J2201/0542 , C08J2205/044 , C08J2333/12 , C08J2367/04 , C08J2425/06 , Y10T428/21 , Y10T428/249979
摘要： A porous ultra-thin polymer film has a film thickness of 10 nm-1000 nm. A method of producing the porous ultra-thin polymer film includes dissolving two types of mutually-immiscible polymers in a first solvent in an arbitrary proportion to obtain a solution; applying the solution onto a substrate and then removing the first solvent from the solution applied onto the substrate to obtain a phase-separated ultra-thin polymer film that has been phase-separated into a sea-island structure; and immersing the ultra-thin polymer film in a second solvent which is a good solvent for the polymer of the island parts but a poor solvent for a polymer other than the island parts to remove the island parts, thereby obtaining a porous ultra-thin polymer film.

3. 发明授权

US08647613B2 Drug carrier 失效
标题翻译：药物载体
公开(公告)号：US08647613B2
公开(公告)日：2014-02-11
申请号：US11886319
申请日：2006-03-10
申请人： Shinji Takeoka , Yosuke Okamura , Hideo Kanazawa , Shuji Hisamoto , Kohei Kubota , Yosuke Obata
发明人： Shinji Takeoka , Yosuke Okamura , Hideo Kanazawa , Shuji Hisamoto , Kohei Kubota , Yosuke Obata
IPC分类号： A61K31/787
CPC分类号： A61K9/1272 , A61K47/6911
摘要： The present invention has an object of providing a drug carrier capable of controlling in vivo pharmacokinetics. The present invention is directed to a drug carrier comprising a molecular assembly having a drug incorporated therein, and the above object can be achieved by a part of the amphiphilic molecules included in the molecular assembly being released from the molecular assembly by an external environmental change. The present invention utilizes a phenomenon that the hydrophilic-hydrophobic balance of the amphiphilic molecules is shifted toward hydrophilicity by an external environmental change and thus the amphiphilic molecules are freed from the molecular assembly.
摘要翻译：本发明的目的是提供能够控制体内药代动力学的药物载体。本发明涉及包含其中并入药物的分子组合物的药物载体，并且上述目的可以通过外部环境变化从分子组合中包含的一部分包含在分子组合中的两亲分子来实现。本发明利用两亲性分子的亲水疏水性平衡通过外部环境变化向亲水性转移的现象，从而使两亲分子脱离分子组装。

4. 发明授权

US08587076B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08587076B2
公开(公告)日：2013-11-19
申请号：US13547913
申请日：2012-07-12
申请人： Junji Hirase , Akio Sebe , Naoki Kotani , Gen Okazaki , Kazuhiko Aida , Shinji Takeoka
发明人： Junji Hirase , Akio Sebe , Naoki Kotani , Gen Okazaki , Kazuhiko Aida , Shinji Takeoka
IPC分类号： H01L29/76 , H01L29/94 , H01L27/108 , H01L31/119 , H01L31/062
CPC分类号： H01L29/4983 , H01L29/42368 , H01L29/42376 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.
摘要翻译：半导体器件包括：形成在衬底的有源区上的高介电常数栅极绝缘膜; 形成在高介电常数栅极绝缘膜上的栅电极; 以及形成在栅电极的每个侧表面上的绝缘侧壁。高介电常数栅极绝缘膜连续地形成为从栅极下方延伸到绝缘侧壁下方。位于绝缘侧壁下方的高介电常数栅极绝缘膜的至少一部分的厚度比位于栅电极下方的高介电常数栅极绝缘膜的厚度的厚度小。

5. 发明授权

US08253180B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08253180B2
公开(公告)日：2012-08-28
申请号：US13037831
申请日：2011-03-01
申请人： Junji Hirase , Akio Sebe , Naoki Kotani , Gen Okazaki , Kazuhiko Aida , Shinji Takeoka
发明人： Junji Hirase , Akio Sebe , Naoki Kotani , Gen Okazaki , Kazuhiko Aida , Shinji Takeoka
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/4983 , H01L29/42368 , H01L29/42376 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.
摘要翻译：半导体器件包括：形成在衬底的有源区上的高介电常数栅极绝缘膜; 形成在高介电常数栅极绝缘膜上的栅电极; 以及形成在栅电极的每个侧表面上的绝缘侧壁。高介电常数栅极绝缘膜连续地形成为从栅极下方延伸到绝缘侧壁下方。位于绝缘侧壁下方的高介电常数栅极绝缘膜的至少一部分的厚度比位于栅电极下方的高介电常数栅极绝缘膜的厚度的厚度小。

6. 发明授权

US08247873B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08247873B2
公开(公告)日：2012-08-21
申请号：US12621965
申请日：2009-11-19
申请人： Shinji Takeoka
发明人： Shinji Takeoka
IPC分类号： H01L29/76
CPC分类号： H01L21/823468 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a first MISFET and a second MISFET, wherein the first MISFET includes a semiconductor substrate 100, a first gate insulating film 101a and a first gate electrode 102a formed on the first region of the semiconductor substrate, and first side walls (103a, 120a) formed on the side surface of the first gate electrode 102a, and the second MISFET includes a second gate insulating film 101b and a second gate electrode 102b formed on the second region of the semiconductor substrate 100, and second side walls (103b, 120b) formed on the side surface of the second gate electrode 102b. The width of the first side wall is smaller than the width of the second side wall, and the second side wall includes the second spacer 103b containing a higher concentration of hydrogen than the first spacer 103a.
摘要翻译：半导体器件包括第一MISFET和第二MISFET，其中第一MISFET包括形成在半导体衬底的第一区域上的半导体衬底100，第一栅极绝缘膜101a和第一栅电极102a以及第一侧壁（103a ，120a），并且第二MISFET包括形成在半导体衬底100的第二区域上的第二栅极绝缘膜101b和第二栅极电极102b，以及第二侧壁（103b， 120b）形成在第二栅电极102b的侧表面上。第一侧壁的宽度小于第二侧壁的宽度，并且第二侧壁包括含有比第一间隔件103a更高浓度的氢的第二间隔件103b。

7. 发明申请

US20110147857A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110147857A1
公开(公告)日：2011-06-23
申请号：US13037831
申请日：2011-03-01
申请人： Junji HIRASE , Akio Sebe , Naoki Kotani , Gen Okazaki , Kazuhiko Aida , Shinji Takeoka
发明人： Junji HIRASE , Akio Sebe , Naoki Kotani , Gen Okazaki , Kazuhiko Aida , Shinji Takeoka
IPC分类号： H01L29/772
CPC分类号： H01L29/4983 , H01L29/42368 , H01L29/42376 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.
摘要翻译：半导体器件包括：形成在衬底的有源区上的高介电常数栅极绝缘膜; 形成在高介电常数栅极绝缘膜上的栅电极; 以及形成在栅电极的每个侧表面上的绝缘侧壁。高介电常数栅极绝缘膜连续地形成为从栅极下方延伸到绝缘侧壁下方。位于绝缘侧壁下方的高介电常数栅极绝缘膜的至少一部分的厚度比位于栅电极下方的高介电常数栅极绝缘膜的厚度的厚度小。

8. 发明授权

US07838685B2 Cationic amino acid type lipid 有权
标题翻译：阳离子型氨基酸型脂质
公开(公告)号：US07838685B2
公开(公告)日：2010-11-23
申请号：US11919286
申请日：2006-04-27
申请人： Shinji Takeoka , Yosuke Obata
发明人： Shinji Takeoka , Yosuke Obata
IPC分类号： C07D233/61
CPC分类号： A61K8/44 , A61K8/43 , A61K8/4946 , A61K9/127 , A61K9/1272 , A61K47/183 , A61Q19/00 , C07D233/64 , C07K5/06086 , C07K5/06095 , C07K5/06147
摘要： The present invention provides a novel complex lipid having a cationic functional group derived from an amino acid. Namely, the present invention provides a cationic acid amino acid type lipid represented by the following formula: wherein, R1 is a hydrocarbon group having a cationic functional group derived from an amino acid, R2 and R3 are each independently a chain hydrocarbon group, A1 and A2 are each independently a linkage group selected from the group consisting of —COO—, —OCO—, —CONH— and NHCO—, and n is an integer of 2 to 4.
摘要翻译：本发明提供具有衍生自氨基酸的阳离子官能团的新型复合脂质。即，本发明提供由下式表示的阳离子酸性氨基酸型脂质：其中，R1为具有来自氨基酸的阳离子官能团的烃基，R2和R3各自独立地为链状烃基，A1和 A2各自独立地为选自-COO-，-OCO-，-CONH-和NHCO-的连接基团，n为2〜4的整数。

9. 发明申请

US20100291672A1 REAGENT FOR INTRODUCTION OF PROTEIN OR GENE 有权
标题翻译：蛋白质或基因介绍试剂
公开(公告)号：US20100291672A1
公开(公告)日：2010-11-18
申请号：US12312648
申请日：2007-11-26
申请人： Shinji Takeoka , Naoya Takeda , Hitoshi Kurumizaka , Isao Sakane , Namiko Ikegaya , Yosuke Obata , Syunsuke Saito
发明人： Shinji Takeoka , Naoya Takeda , Hitoshi Kurumizaka , Isao Sakane , Namiko Ikegaya , Yosuke Obata , Syunsuke Saito
IPC分类号： C12N5/07 , C07C229/26
CPC分类号： C07C237/22 , C07C237/08 , C07C237/12 , C07K5/021 , C07K5/06086 , C07K5/0815
摘要： The present invention provides a reagent for introducing a protein or gene into a cell. The reagent of the present invention is, for example, a reagent for introducing a protein or gene into a cell, which comprises a composition comprising a cationic amino acid type lipid represented by the following formula (I)-1: (wherein in formula (I)-1: L is a single bond, —CONH—, or —S—S—; M1 is —(CH2)k— or —(CH2CH2O)k— (wherein k is an integer between 0 and 14); and m1 and m2 are each independently an integer between 11 and 21 (in this regard, when providing a reagent for introducing a gene into a cell, the case where both m1 and m2 are 15 is excluded)).
摘要翻译：本发明提供了将蛋白质或基因导入细胞的试剂。本发明的试剂是例如将蛋白质或基因导入细胞的试剂，其包含含有下式（I）-1表示的阳离子型氨基酸型脂质的组合物（式中，式 I）-1：L是单键，-CONH-或-S-S-; M 1是 - （CH 2）k - 或 - （CH 2 CH 2 O）k-（其中k是0和14之间的整数）;和 m1和m2各自独立地为11-21之间的整数（在这方面，当提供用于将基因导入细胞的试剂时，m1和m2均为15的情况除外））。

10. 发明授权

US07732839B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07732839B2
公开(公告)日：2010-06-08
申请号：US11525011
申请日：2006-09-22
申请人： Akio Sebe , Naoki Kotani , Shinji Takeoka , Gen Okazaki , Junji Hirase , Kazuhiko Aida
发明人： Akio Sebe , Naoki Kotani , Shinji Takeoka , Gen Okazaki , Junji Hirase , Kazuhiko Aida
IPC分类号： H01L27/10
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A MIS transistor includes a gate electrode portion, insulating sidewalls formed on side surfaces of the gate electrode portion, source/drain regions and a stress film formed so as to cover the gate electrode portion and the source/drain regions. A height of an upper surface of the gate electrode portion is smaller than a height of an upper edge of each of the insulating sidewalls. A thickness of first part of the stress film located on the gate electrode portion is larger than a thickness of second part of the stress film located on the source/drain regions.
摘要翻译： MIS晶体管包括栅电极部分，形成在栅电极部分的侧表面上的绝缘侧壁，源极/漏极区域和形成为覆盖栅电极部分和源极/漏极区域的应力膜。栅电极部分的上表面的高度小于每个绝缘侧壁的上边缘的高度。位于栅电极部分的应力膜的第一部分的厚度大于位于源/漏区上的应力膜的第二部分的厚度。

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