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1. 发明授权

US4978412A Plasma processing device 失效
标题翻译：等离子处理装置
公开(公告)号：US4978412A
公开(公告)日：1990-12-18
申请号：US505453
申请日：1990-04-06
申请人： Makoto Aoki , Yoshifumi Tahara , Izumi Arai
发明人： Makoto Aoki , Yoshifumi Tahara , Izumi Arai
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31 , H01L21/687
CPC分类号： H01L21/68721 , H01L21/68728
摘要： A plasma processing device intended to plasma-process a wafer which is mounted on a mount in the plasma process vessel and clamped at the peripheral rim thereof between a clamping member and the mount. The wafer thus processed can be then handled when it is released from its clamped state. A plate spring is housed like a cantilever in a part of that portion of the clamping member which clamps the wafer relative to the mount, and a free end of the plate spring is projected from a recess which is formed on the underside of the clamping member to house the free end. When the wafer is clamped between the clamping member and the mount, the free end is housed in the recess, but when the wafer is released from its clamped state, the free end is projected from the recess to separate it from the clamping member. The wafer can therefore be left on the mount without adhering to the clamping member.

2. 发明授权

US6110287A Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US6110287A
公开(公告)日：2000-08-29
申请号：US843129
申请日：1997-04-28
申请人： Izumi Arai , Yoshifumi Tahara , Hiroshi Nishikawa , Yoshinobu Mitano , Shunichi Iimuro , Kazuo Fukasawa , Yutaka Miura , Shozo Hosoda
发明人： Izumi Arai , Yoshifumi Tahara , Hiroshi Nishikawa , Yoshinobu Mitano , Shunichi Iimuro , Kazuo Fukasawa , Yutaka Miura , Shozo Hosoda
IPC分类号： C23C16/509 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , C23C16/5096 , H01J37/3244
摘要： A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.
摘要翻译：一种等离子体处理方法，其中将高频电力供应到其中安装有被处理物体的处理室，从而在处理室中产生等离子体，并且在等离子体的气氛中对物体进行处理，其中高频功率受到低频功率的调制。在一个实施例中，通过使用具有随时间变化的电流方向的电力在处理室中产生等离子体，并且待处理物体在等离子体的气氛中被处理，其中具有基本频率的功率为以频率等于基本频率的n倍（n =整数）的频率进行频率调制。在本发明的等离子体处理装置中，当通过形成在电极中的第一气体导入孔将处理气体供给到处理室时，对被保持在对置电极上的被处理物进行等离子体处理。提供了一种电阻，其应用[施加装置]对来自气体导入装置的气体导入孔流向处理室的工艺气体施加阻力，使得当气体导入装置中的过程压力在处理室中设定为0.5乇以下。

3. 发明授权

US5155331A Method for cooling a plasma electrode system for an etching apparatus 失效
标题翻译：用于冷却用于蚀刻装置的等离子体电极系统的方法
公开(公告)号：US5155331A
公开(公告)日：1992-10-13
申请号：US553316
申请日：1990-07-17
申请人： Takao Horiuchi , Izumi Arai , Yoshifumi Tahara
发明人： Takao Horiuchi , Izumi Arai , Yoshifumi Tahara
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32935
摘要： An etching method comprises the steps of setting a substrate to be processed above the surface of a first electrode opposed to a second electrode within a vacuum container, with a clearance formed between the surface of the first electrode and the substrate, supplying a cooling gas to the electrodes with a predetermined flow rate and a pressure, supplying a process gas into the vacuum container, changing the process gas to a plasma, by applying a predetermined electric power across the electrodes, and etching the substrate by means of the plasma of the process gas.
摘要翻译：蚀刻方法包括以下步骤：在真空容器内的与第二电极相对的第一电极的表面之上设置待处理的基板，在第一电极的表面和基板之间形成间隙，将冷却气体供应到电极具有预定的流量和压力，将处理气体供应到真空容器中，通过在电极之间施加预定的电力将处理气体改变为等离子体，并通过该方法的等离子体蚀刻基板加油站。

4. 发明授权

US4963713A Cooling of a plasma electrode system for an etching apparatus 失效
标题翻译：用于蚀刻装置的等离子体电极系统的冷却
公开(公告)号：US4963713A
公开(公告)日：1990-10-16
申请号：US298892
申请日：1989-01-19
申请人： Takao Horiuchi , Izumi Arai , Yoshifumi Tahara
发明人： Takao Horiuchi , Izumi Arai , Yoshifumi Tahara
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32935
摘要： An etching apparatus has a method for stopping the generation of plasma responsive to the detection of poor cooling of a block electrode, which is provided with an electrode, to prevent the electrode from being cracked because of the thermal expansion of both electrodes so as to reduce the times of electrode exchange. The present invention also provides an etching method including a process of controlling the flow rate and pressure of a cooling gas supplied to a clearance between a substrate to be processed and a block electrode on which the substrate is mounted, so as to enable uniform etching to be applied to the substrate.

5. 发明授权

US5203958A Processing method and apparatus 失效
标题翻译：处理方法和装置
公开(公告)号：US5203958A
公开(公告)日：1993-04-20
申请号：US735277
申请日：1991-07-24
申请人： Izumi Arai , Yoshifumi Tahara
发明人： Izumi Arai , Yoshifumi Tahara
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L21/68721 , H01L21/67069 , H01L21/67109
摘要： A processing method includes the steps of placing an object to be processed on a susceptor arranged in a hermetic container, preliminarily introducing a small amount of heat transfer medium gas to a gap between the object to be processed and the susceptor while evacuating the gap, introducing the heat transfer medium gas to the gap until a pressure thereof reaches a predetermined value while controlling the pressure thereof by controlling an evacuation amount from the gap, and processing the object to be processed.

6. 发明授权

US5164034A Apparatus and method for processing substrate 失效
标题翻译：装置和处理基板的方法
公开(公告)号：US5164034A
公开(公告)日：1992-11-17
申请号：US762087
申请日：1991-09-19
申请人： Izumi Arai , Yoshifumi Tahara , Yoshio Ishikawa
发明人： Izumi Arai , Yoshifumi Tahara , Yoshio Ishikawa
IPC分类号： H01L21/00 , H01L21/308 , H01L21/311
CPC分类号： H01L21/67207 , H01L21/3081 , H01L21/31138 , H01L21/67069
摘要： A substrate processing apparatus comprising a housing section for housing substrates to be processed, a first chamber for performing anisotropic etching treatment, conveyor means for conveying the substrates from the housing section to the first chamber, and a second chamber for performing at least one of isotropic etching treatment and ashing treatment with respect to a substrate which has been subjected to the anisotropic etching treatment in the first chamber. And a method of processing substrates, comprising the steps of performing anisotropic etching treatment in a first chamber with respect to the substrates, and performing at least one of isotropic etching treatment and ashing treatment in a second chamber with respect to the substrates which have been subjected to the anisotropic etching treatment in the first chamber and have been kept unexposed to the atmosphere, the isotropic etching treatment and the ashing treatment being performed simultaneously or in succession.

7. 发明授权

US4931135A Etching method and etching apparatus 失效
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US4931135A
公开(公告)日：1990-06-05
申请号：US287156
申请日：1988-12-21
申请人： Takao Horiuchi , Izumi Arai , Yoshifumi Tahara
发明人： Takao Horiuchi , Izumi Arai , Yoshifumi Tahara
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32541 , H01J37/32724 , H01J2237/2001 , H01J2237/334 , H01L2924/0002
摘要： A mounting surface of an electrode for mounting an object to be processed thereon is projected to be a curved surface identical to a curved surface obtained by deforming the object to be processed by a uniform load, and etching of the object to be processed is performed. Etching of the object to be processed can be easily and stably performed, thereby improving yield and productivity.

8. 发明授权

US5858258A Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US5858258A
公开(公告)日：1999-01-12
申请号：US817961
申请日：1992-01-08
申请人： Hiroshi Kojima , Yoshifumi Tahara , Izumi Arai
发明人： Hiroshi Kojima , Yoshifumi Tahara , Izumi Arai
IPC分类号： C23F4/00 , H01J37/32 , H01L21/3065 , H01L21/311 , H05H1/00 , B05D5/00
CPC分类号： H01J37/3244 , C23F4/00 , H01J37/32862 , H01L21/3065 , H01L21/31116 , H01J2237/334
摘要： A method of plasma-processing which includes the step of plasma-processing a matter mounted on a component in a plasma processing vessel by using plasma gases, and the step of introducing an inactive gas into the plasma processing vessel when no plasma process is conducted in the vessel and gases resulted from the previous plasma process remain therein.
摘要翻译：一种等离子体处理方法，包括通过使用等离子体气体对安装在等离子体处理容器中的部件上的物质进行等离子体处理的步骤，以及在不进行等离子体处理时将惰性气体引入等离子体处理容器的步骤由先前的等离子体处理产生的容器和气体保留在其中。

9. 发明授权

US5382311A Stage having electrostatic chuck and plasma processing apparatus using same 失效
标题翻译：具有静电卡盘和使用其的等离子体处理装置的阶段
公开(公告)号：US5382311A
公开(公告)日：1995-01-17
申请号：US168367
申请日：1993-12-17
申请人： Kenji Ishikawa , Mitsuaki Komino , Tadashi Mitui , Teruo Iwata , Izumi Arai , Yoshifumi Tahara
发明人： Kenji Ishikawa , Mitsuaki Komino , Tadashi Mitui , Teruo Iwata , Izumi Arai , Yoshifumi Tahara
IPC分类号： C23C16/458 , H01L21/683 , H01L21/00
CPC分类号： C23C16/466 , C23C16/4586 , H01L21/6831
摘要： A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.
摘要翻译：用于半导体晶片的等离子体蚀刻装置包括设置在真空处理室中的基座。在基座的安装面形成有用于使传热气体流动的槽。该槽包括沿着安装表面的周边边缘形成的环形槽部分，并且垂直延伸穿过基座的气体路径连接到环形槽部分。片状静电卡盘气密地粘附在基座的安装面上以覆盖凹槽。在静电卡盘中形成有多个通孔，这些孔沿着槽的上方配置。传热气体通过气路，凹槽和通孔供应在静电卡盘和半导体晶片之间。传热气体有助于从布置在基座下方的液氮源将冷转移到晶片。

10. 发明授权

US5089083A Plasma etching method 失效
标题翻译：等离子体蚀刻法
公开(公告)号：US5089083A
公开(公告)日：1992-02-18
申请号：US512151
申请日：1990-04-20
申请人： Hiroshi Kojima , Yoshifumi Tahara , Izumi Arai
发明人： Hiroshi Kojima , Yoshifumi Tahara , Izumi Arai
IPC分类号： H01L21/311 , H01L21/3213
CPC分类号： H01L21/31116 , H01L21/32137
摘要： A plasma etching method including the steps of mounting an object to be processed in a region formed between one electrode and an other electrode, introducing an etching gas into the region, setting an area of the contact surface of the other electrode, which is in contact with the etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching the object, generating plasma of the etching gas by applying a predetermined electric power between the electrodes after setting the area of the contact surface of the other electrode, which is in contact with the etching gas, to the predetermined value, and etching the object by the plasma.

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