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1. 发明申请

US20030010974A1 Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials 失效
标题翻译：用于制造使用压电材料的半导体结构和器件的结构和方法
公开(公告)号：US20030010974A1
公开(公告)日：2003-01-16
申请号：US09903784
申请日：2001-07-13
申请人： MOTOROLA, INC.
发明人： Aroon Tungare , Tomasz L. Klosowiak
IPC分类号： H01L021/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , C30B29/48 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L41/0815 , H01L41/319
摘要： High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.
摘要翻译：通过形成用于生长压电单晶层的柔性衬底，可以将压电单晶材料的高质量外延层生长成覆盖在单晶衬底例如大硅晶片上。容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层允许生长高质量的单晶氧化物容纳缓冲层。容纳缓冲层与下面的硅晶片和上覆的压电单晶材料层晶格匹配。

2. 发明申请

US20030218165A1 Organic semiconductor device and method 失效
标题翻译：有机半导体器件及方法
公开(公告)号：US20030218165A1
公开(公告)日：2003-11-27
申请号：US10154013
申请日：2002-05-23
申请人： Motorola, Inc.
发明人： Ke Keryn Lian , Robert T. Croswell , Aroon Tungare , Manes Eliacin
IPC分类号： H01L035/24 , H01L051/00
CPC分类号： H01L51/0537 , H01L21/31691 , H01L25/046 , H01L27/28 , H01L51/0512 , H01L2924/0002 , H01L2924/09701 , H05K1/185 , H01L2924/00
摘要： An organic semiconductor device (11) can be embedded within a printed wiring board (10). In various embodiments, the embedded device (11) can be accompanied by other organic semiconductor devices (31) and/or passive electrical components (26). When so embedded, conductive vias (41, 42, 43) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.
摘要翻译：有机半导体器件（11）可以嵌入印刷线路板（10）内。在各种实施例中，嵌入式设备（11）可以伴随有其他有机半导体器件（31）和/或无源电子部件（26）。当嵌入时，可以使用导电通孔（41,42,43）来促进与嵌入式装置的电连接。在各种实施例中，使用特定类别的材料和/或处理步骤来促进有机半导体和/或嵌入式或其它方式的无源电组件的制造。

3. 发明申请

US20030020082A1 Structure and method for fabricating semiconductor structures and devices for optical switching 审中-公开
标题翻译：制造半导体结构和光开关器件的结构和方法
公开(公告)号：US20030020082A1
公开(公告)日：2003-01-30
申请号：US09911412
申请日：2001-07-25
申请人： MOTOROLA, INC.
发明人： Aroon Tungare
IPC分类号： H01L027/15
CPC分类号： G02B6/29358 , G02B6/29389 , G02B6/29395 , G02F1/0126 , G02F2202/103 , G02F2202/105 , H01L27/15
摘要： An optical system includes a Fabry-Perot type optical resonator for selectively interrupting optical signals traveling along an optical fiber. The optical resonator is placed between ends of two adjoining optical fibers. The resonator includes a bistable photochromatic material that has a refractive index dependent on the intensity of an incident light beam. A light-emitting component provides the incident light. The light-emitting component is formed over and/or using a high quality epitaxial layer of compound semiconductor material grown over a monocrystalline substrate. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. The formation of a compliant substrate includes first growing an accommodating buffer layer on the substrate. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
摘要翻译：光学系统包括用于选择性地中断沿着光纤行进的光信号的法布里 - 珀罗型光谐振器。光谐振器放置在两个邻接的光纤的端部之间。谐振器包括具有取决于入射光束的强度的折射率的双稳态光色材料。发光部件提供入射光。在单晶衬底上生长的化合物半导体材料的高质量外延层上形成和/或使用发光元件。提供了用于生长单晶化合物半导体层的柔性衬底。顺应性衬底的形成包括首先在衬底上生长容纳缓冲层。容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。

4. 发明申请

US20030021520A1 STRUCTURE AND METHOD OF FABRICATION FOR AN OPTICAL SWITCH 有权
标题翻译：光学开关的制造结构和制造方法
公开(公告)号：US20030021520A1
公开(公告)日：2003-01-30
申请号：US09911492
申请日：2001-07-25
申请人： MOTOROLA, INC.
发明人： Aroon Tungare , Keryn Lian , Robert Lempkowski , Barbara Foley Barenburg
IPC分类号： G02B006/35 , G02B006/12
CPC分类号： G02B6/3518 , G02B6/3578 , G02B6/3598 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521
摘要： A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.
摘要翻译：光开关的结构包括在单晶衬底（例如硅晶片）上生长的压电化合物半导体材料的高质量外延层上形成的反射层。可以激活压电层以改变入射在反射层上的光的路径。提供了用于生长单晶化合物半导体层的柔性衬底。容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。容纳缓冲层与下面的硅晶片和上覆的压电单晶材料层晶格匹配。

5. 发明申请

US20030020091A1 Structure and method for fabricating an optical switch utilizing the formation of a compliant substrate 审中-公开
标题翻译：用于制造光学开关的结构和方法，其利用柔性衬底的形成
公开(公告)号：US20030020091A1
公开(公告)日：2003-01-30
申请号：US09911691
申请日：2001-07-25
申请人： MOTOROLA, INC.
发明人： Aroon Tungare , Daniel Gamota , George Valliath
IPC分类号： H01L029/04
CPC分类号： H01S5/0261 , H01L27/15 , H01L31/1035 , H01S5/021 , H01S5/0262 , H01S5/183 , H01S2301/173
摘要： A system for use as an optical switch is disclosed. The system includes light emitting devices formed using high quality epitaxial layers of compound semiconductor materials overlying an accommodating buffer layer on a silicon wafer. The system also includes a tunable electro-optic substrate over the compound semiconductor material, and a polarization beam splitter over the electro-optic substrate. The tunable electro-optic substrate is used to change the polarization of the light emitted from the light emitting devices. The polarization beam splitter is used to guide the light beam, depending on the polarization, in two different directions. The system, together, acts as an optical switch.
摘要翻译：公开了一种用作光开关的系统。该系统包括使用覆盖硅晶片上的容纳缓冲层的化合物半导体材料的高质量外延层形成的发光器件。该系统还包括在化合物半导体材料上的可调电光基底，以及在电光基底上的偏振分束器。可调谐电光基板用于改变从发光器件发射的光的偏振。偏振分束器用于根据极化在两个不同的方向上引导光束。该系统一起作为光开关。

6. 发明申请

US20030022425A1 Structure and method for fabricating semiconductor structures and devices for optical filtering 审中-公开
标题翻译：用于制造半导体结构的结构和方法以及用于光学滤波的器件
公开(公告)号：US20030022425A1
公开(公告)日：2003-01-30
申请号：US09911628
申请日：2001-07-25
申请人： MOTOROLA, INC.
发明人： Aroon Tungare
IPC分类号： H01L021/336 , H01L021/8234 , H01L021/00 , H01L021/311
CPC分类号： H01L31/02165 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L21/31691 , H01L27/15 , H01L31/02327 , H01S5/021 , H01S5/0261 , H01S5/183 , H01S2301/173
摘要： An optical filter system includes a Fabry-Perot type optical resonator formed over a semiconductor light source or light detector. The optical resonator includes a photochromatic material that has a refractive index dependent on the intensity of incident light beams. The semiconductor light source and detector can be formed over and/or using a high quality epitaxial layer of compound semiconductor material grown over a monocrystalline substrate, such as a silicon wafer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.
摘要翻译：光学滤波器系统包括形成在半导体光源或光检测器上的法布里 - 珀罗型光谐振器。光学谐振器包括具有取决于入射光束的强度的折射率的光色材料。半导体光源和检测器可以在诸如硅晶片的单晶衬底上生长的化合物半导体材料的高质量外延层上形成和/或使用。提供了用于生长单晶化合物半导体层的柔性衬底。容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。

7. 发明申请

US20030015134A1 Semiconductor structure for edge mounting applications and process for fabrication 审中-公开
标题翻译：用于边缘安装应用的半导体结构和制造工艺
公开(公告)号：US20030015134A1
公开(公告)日：2003-01-23
申请号：US09906782
申请日：2001-07-18
申请人： MOTOROLA, INC.
发明人： Aroon Tungare , George Valliath
IPC分类号： C30B028/12 , C30B023/00 , C30B028/14 , C30B025/00
CPC分类号： H01L27/15 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L2924/0002 , H01S5/021 , H01S5/026 , H01S5/0261 , H01S5/183 , H01S2301/173 , H01S2301/176 , H01L2924/00
摘要： Semiconductor structures and a method for fabricating semiconductor structures optimized for use in free space optical interconnect systems are disclosed. The semiconductor structures includes a optical component die edge mounted on a carrier structure. The die is formed using high quality epitaxial layers of monocrystalline compound semiconductor materials grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the compound semiconductor monocrystalline layers. The die is edge mounted to the carrier structure such that light beams emitted or detected by devices on the die are parallel to the surface of the carrier structure.
摘要翻译：公开了半导体结构和用于制造优化用于自由空间光互连系统的半导体结构的方法。半导体结构包括安装在载体结构上的光学元件裸片边缘。使用通过形成用于生长化合物半导体单晶层的柔性衬底生长在诸如大硅晶片的单晶衬底上生长的单晶化合物半导体材料的高质量外延层来形成管芯。模具边缘安装到载体结构，使得由模具上的装置发射或检测的光束平行于载体结构的表面。

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