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1. 发明申请

US20120282758A1 METHOD FOR MAKING SEMI-CONDUCTOR NANOCRYSTALS 有权
标题翻译：制备半导体纳米晶的方法
公开(公告)号：US20120282758A1
公开(公告)日：2012-11-08
申请号：US13464363
申请日：2012-05-04
申请人： Lukasz BOROWIK , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frédéric Leroy , Denis Mariolle , Pierre Müller
发明人： Lukasz BOROWIK , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frédéric Leroy , Denis Mariolle , Pierre Müller
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L29/7613 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02381 , H01L21/02488 , H01L21/02529 , H01L21/02532 , H01L21/0259 , H01L21/02601 , H01L21/02667 , H01L29/0665 , H01L29/66075
摘要： A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
摘要翻译：一种制备半导体纳米晶体的方法，至少包括以下步骤：在至少一个电介质层上提供的半导体薄层上形成固体碳化学物质，形成在半导体纳米晶体上的碳化学物质的尺寸和密度导体薄层是半导体纳米晶体的所需尺寸和密度的函数; 对半导体薄层进行退火，对半导体进行去湿并在电介质层上形成半导体纳米晶体。

2. 发明授权

US08697548B2 Method for making semi-conductor nanocrystals oriented along a predefined direction 有权
标题翻译：制造沿预定方向取向的半导体纳米晶体的方法
公开(公告)号：US08697548B2
公开(公告)日：2014-04-15
申请号：US13464390
申请日：2012-05-04
申请人： Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frédéric Leroy , Denis Mariolle , Pierre Müller
发明人： Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frédéric Leroy , Denis Mariolle , Pierre Müller
IPC分类号： H01L33/06 , B82Y40/00 , B82Y30/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02381 , H01L21/02488 , H01L21/02529 , H01L21/02532 , H01L21/02538 , H01L21/0259 , H01L21/02667 , H01L29/0665
摘要： A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
摘要翻译：一种制造半导体纳米晶体的方法，其至少包括以下步骤：制备至少一个单轴应力半导体薄层和电介质层的叠层，退火半导体薄层，使得半导体导体在电介质层上形成垂直于应力轴定向的细长形半导体纳米晶体。

3. 发明授权

US08647957B2 Method for making semi-conductor nanocrystals 有权
标题翻译：制造半导体纳米晶体的方法
公开(公告)号：US08647957B2
公开(公告)日：2014-02-11
申请号：US13464363
申请日：2012-05-04
申请人： Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frederic Leroy , Denis Mariolle , Pierre Muller
发明人： Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frederic Leroy , Denis Mariolle , Pierre Muller
IPC分类号： B82Y40/00
CPC分类号： H01L29/7613 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02381 , H01L21/02488 , H01L21/02529 , H01L21/02532 , H01L21/0259 , H01L21/02601 , H01L21/02667 , H01L29/0665 , H01L29/66075
摘要： A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
摘要翻译：一种制备半导体纳米晶体的方法，至少包括以下步骤：在至少一个电介质层上提供的半导体薄层上形成固体碳化学物质，形成在半导体纳米晶体上的碳化学物质的尺寸和密度导体薄层是半导体纳米晶体的所需尺寸和密度的函数; 对半导体薄层进行退火，对半导体进行去湿并在电介质层上形成半导体纳米晶体。

4. 发明申请

US20060225164A1 Scanning probe characterization of surfaces 有权
标题翻译：扫描探针表面表征
公开(公告)号：US20060225164A1
公开(公告)日：2006-10-05
申请号：US11375867
申请日：2006-03-15
申请人： Clayton Williams , Ezra Bussmann
发明人： Clayton Williams , Ezra Bussmann
IPC分类号： G01N23/00
CPC分类号： G01Q60/04 , G01Q60/12 , G01Q60/40 , Y10S977/849 , Y10S977/852 , Y10S977/854 , Y10S977/86 , Y10S977/861 , Y10S977/862 , Y10S977/863 , Y10S977/864
摘要： Characterizing dielectric surfaces by detecting electron tunneling. An apparatus includes an atomic force probe. A mechanical actuator is connected to the atomic force probe. A mechanical modulator is connected to the mechanical actuator. The mechanical modulator modulates the mechanical actuator and the atomic force probe at the resonant frequency of the atomic force probe. An electrical modulator is connected to the atomic force probe. A feedback sensing circuit is connected to the mechanical modulator to detect movement of the atomic force probe and provide information about the movement of the atomic force probe to the mechanical modulator allowing the mechanical modulator to modulate the atomic force probe at the resonant frequency of the atomic force probe as the resonant frequency of the atomic force probe changes. An FM detector is connected to the feedback circuit detects changes in the resonant frequency of the atomic force probe.
摘要翻译：通过检测电子隧道来表征电介质表面。一种装置包括原子力探针。机械致动器连接到原子力探针。机械调节器连接到机械致动器。机械调制器将机械致动器和原子力探针以原子力探针的共振频率进行调制。电调制器连接到原子力探针。反馈感测电路连接到机械调制器以检测原子力探针的移动，并提供关于原子力探针到机械调制器的运动的信息，允许机械调制器以原子的共振频率调制原子力探针力探头作为原子力探头的共振频率发生变化。 FM检测器连接到反馈电路，检测原子力探头的谐振频率的变化。

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