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1. 发明申请

US20120321240A1 ELECTRO-OPTICAL DEVICE AND METHOD FOR PROCESSING AN OPTICAL SIGNAL 审中-公开
标题翻译：电光装置及其处理光信号的方法
公开(公告)号：US20120321240A1
公开(公告)日：2012-12-20
申请号：US13460395
申请日：2012-04-30
申请人： Luca Alloatti , Juerg Leuthold , Wolfgang Freude , Christian Koos , Dietmar Korn , Robert Palmer
发明人： Luca Alloatti , Juerg Leuthold , Wolfgang Freude , Christian Koos , Dietmar Korn , Robert Palmer
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F1/015 , G02F2001/0151 , G02F2001/0155 , G02F2201/06 , G02F2202/02 , G02F2203/50
摘要： An electro-optical device for processing an optical signal, comprises an electrode that is arranged and designed so that the optical signal at least partially intrudes the electrode when the optical signal is processed in the electro-optical device. An insulator is arranged adjacent to the electrode so that one face of the electrode contacts the insulator. A gate is arranged so that a voltage is applicable between the electrode and the gate such that a charge layer is induced on the face of the electrode that is contacting the insulator.
摘要翻译：一种用于处理光信号的电光装置，包括布置和设计的电极，使得当在光电装置中处理光信号时光信号至少部分地侵入电极。绝缘体被布置成与电极相邻，使得电极的一个面接触绝缘体。栅极被布置成使得在电极和栅极之间施加电压，使得在与绝缘体接触的电极的表面上感应电荷层。

2. 发明申请

US20160171149A1 METHODS AND APPARATUS FOR AUTOMATED DESIGN OF SEMICONDUCTOR PHOTONIC DEVICES 审中-公开
标题翻译：半导体光电器件自动设计的方法与装置
公开(公告)号：US20160171149A1
公开(公告)日：2016-06-16
申请号：US14972007
申请日：2015-12-16
申请人： Luca Alloatti
发明人： Luca Alloatti
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F17/5072
摘要： A photonic design automation (PDA) tool to facilitate design of semiconductor photonic devices is described. In one example, the PDA tool includes a process design library including one or more photonics parameterized cells (pCells), a plurality of processor-executable photonics design functions including a design rule check (DRC) violation removal function, and a semiconductor technology-dependent parameter file including a plurality of design rules that define allowed semiconductor design patterns to be converted to a plurality of semiconductor fabrication mask designs in a first semiconductor technology. The PDA tool supports a graphical user interface (GUI) to provide access to the library of photonic pCells to create intuitive physical property layers for a photonic device, and processes the physical property layers using the DRC violation removal function and the design rules to automatically generate a plurality of mask design layers for a “DRC clean” physical layout of the photonics device.
摘要翻译：描述了一种促进半导体光子器件设计的光子设计自动化（PDA）工具。在一个示例中，PDA工具包括包括一个或多个光子参数化单元（pCells）的处理设计库，包括设计规则检查（DRC）违规删除功能的多个处理器可执行光子设计功能以及与半导体技术有关的参数文件包括在第一半导体技术中定义允许的半导体设计图案被转换为多个半导体制造掩模设计的多个设计规则。 PDA工具支持图形用户界面（GUI），以提供对光子pCells库的访问，为光子器件创建直观的物理属性层，并使用DRC违规删除功能和设计规则处理物理属性层，以自动生成用于光子器件的“DRC清洁”物理布局的多个掩模设计层。

3. 发明申请

US20170040487A1 CLOSED-LOOP RESONATOR SILICON GERMANIUM PHOTODETECTOR APPARATUS AND OTHER SEMICONDUCTOR DEVICES INCLUDING CURVED-SHAPE SILICONE GERMANIUM STRUCTURES 审中-公开
标题翻译：闭环谐振器硅锗光电设备及其他半导体器件，其中包括弯曲形状的硅胶锗结构
公开(公告)号：US20170040487A1
公开(公告)日：2017-02-09
申请号：US15332877
申请日：2016-10-24
申请人： Luca Alloatti
发明人： Luca Alloatti
IPC分类号： H01L31/18 , H01L31/0312 , G02B6/12 , H01L31/0224 , H01L31/11 , G02B6/293 , H01L31/0232 , H01L31/0352
CPC分类号： H01L31/1812 , G02B6/12004 , G02B6/29338 , G02B2006/12123 , H01L31/022408 , H01L31/0232 , H01L31/02327 , H01L31/0312 , H01L31/03529 , H01L31/103 , H01L31/1037 , H01L31/1105 , Y02E10/50
摘要： Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure. Electric fields arising from the respective p-n silicon junctions significantly facilitate a flow of the generated photocarriers between electric contact regions of the photodetector.
摘要翻译：诸如光子器件的半导体器件采用基本上为弧形的硅锗（SiGe）结构，并使用零变CMOS制造工艺技术制造。在一个示例中，闭环谐振器波导耦合光电检测器包括形成在硅衬底中的硅谐振器结构，交错的n掺杂阱注入区域和在p型掺杂阱注入区域上形成多个硅pn结的硅谐振器结构以及形成在叉指n掺杂和p掺杂阱注入区域内的凹穴中的闭环SiGe光载流子产生区域。当存在于硅谐振器结构中时，闭环SiGe区域被定位成基本上与光学模式重叠，并穿过硅谐振器结构周围的多个硅p-n结。由各个p-n硅结点引起的电场显着促进了所产生的光载流子在光电检测器的电接触区域之间的流动。

4. 发明申请

US20170040469A1 WAVEGUIDE-COUPLED SILICON-GERMANIUM PHOTODETECTORS AND FABRICATION METHODS FOR SAME 审中-公开
标题翻译：波导耦合硅锗光电转换器及其制造方法
公开(公告)号：US20170040469A1
公开(公告)日：2017-02-09
申请号：US15332872
申请日：2016-10-24
申请人： Luca Alloatti
发明人： Luca Alloatti
IPC分类号： H01L31/0232 , G02B6/12 , H01L31/103
CPC分类号： G02B6/12 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/1347 , G02B6/30 , G02B2006/12097 , G02B2006/12123 , H01L21/823807 , H01L21/823828 , H01L29/4916 , H01L29/7849 , H01L31/103
摘要： A waveguide-coupled Silicon Germanium (SiGe) photodetector. A p-n silicon junction is formed in a silicon substrate by an n-doped silicon region and a p-doped silicon region, a polysilicon rib is formed on the silicon substrate to provide a waveguide core for an optical mode of radiation, and an SiGe pocket is formed in the silicon substrate along a length of the polysilicon rib and contiguous with the p-n silicon junction. An optical mode of radiation, when present, substantially overlaps with the SiGe pocket so as to generate photocarriers in the SiGe pocket. An electric field arising from the p-n silicon junction significantly facilitates a flow of the generated photocarriers through the SiGe pocket. In one example, such photodetectors have been fabricated using a standard CMOS semiconductor process technology without requiring changes to the process flow (i.e., “zero-change CMOS”).
摘要翻译：波导耦合硅锗（SiGe）光电探测器。通过n掺杂硅区域和p掺杂硅区域在硅衬底中形成pn硅结，在硅衬底上形成多晶硅肋，以提供用于光学辐射模式的波导芯，以及SiGe口袋沿着多晶硅肋条的长度形成在硅衬底中并与pn硅结连续。当存在时，辐射的光学模式基本上与SiGe袋重叠，以便在SiGe袋中产生光载流子。由p-n硅结点产生的电场显着促进所产生的光载流子流过SiGe口袋。在一个示例中，这种光电检测器已经使用标准CMOS半导体工艺技术制造而不需要改变工艺流程（即，“零变换CMOS”）。

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