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1. 发明授权

US06317642B1 Apparatus and methods for uniform scan dispensing of spin-on materials 有权
标题翻译：用于均匀扫描分配旋涂材料的装置和方法
公开(公告)号：US06317642B1
公开(公告)日：2001-11-13
申请号：US09191438
申请日：1998-11-12
申请人： Lu You , Dawn Hopper , Christof Streck , John Pellerin , Richard J. Huang
发明人： Lu You , Dawn Hopper , Christof Streck , John Pellerin , Richard J. Huang
IPC分类号： G06F1900
CPC分类号： H01L21/6715 , B05D1/005
摘要： This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of deposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films. The methods of this invention enable the production of spin-on thin films, which have more even film thickness and uniformity. The semiconductor thin films produced by the methods of this invention are useful for the manufacture of semiconductor devices comprising interlevel dielectric materials.
摘要翻译：本发明描述了用于半导体薄膜的旋涂沉积的改进的装置和方法。改进的装置提供沉积室内的受控温度，压力和气体组成。改进的方法包括通过可移动的分配装置分配含有薄膜前体的溶液，以及仔细调节前体溶液沉积在晶片上的图案。本发明还包括仔细调节沉积变量，包括分配时间，晶片转速，停止时间和晶片旋转速率。在一个实施方案中，前体溶液从晶片的外边缘向中心分配。在替代实施例中，处理器调节分配臂和前驱泵的运动，以提供均匀分配的前体溶液层。本发明还描述了用于蒸发溶剂和固化薄膜的改进方法。本发明的方法能够生产具有更均匀的膜厚度和均匀性的旋涂薄膜。通过本发明的方法生产的半导体薄膜可用于制造包括层间电介质材料的半导体器件。

2. 发明授权

US6066574A Hot plate cure process for BCB low k interlevel dielectric 有权
标题翻译： BCB低k层间电介质的热板固化工艺
公开(公告)号：US6066574A
公开(公告)日：2000-05-23
申请号：US187429
申请日：1998-11-06
申请人： Lu You , Dawn Hopper , Christof Streck
发明人： Lu You , Dawn Hopper , Christof Streck
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/768 , H01L21/31
CPC分类号： H01L21/31058 , H01L21/312
摘要： A dielectric layer comprising a benzocyclobutene (BCB)-based low dielectric constant (low k) material is formed on a surface of a semiconductor wafer substrate by (a) spin coating a layer of a fluid material comprising BCB in a liquid solvent or dispersant vehicle on the substrate; (b) baking the coated substrate at a first temperature and for a first time interval to remove the solvent; (c) curing the baked coating by heating at a second temperature higher than the first temperature, and for a second time interval; and (d) subjecting the substrate with cured coating thereon to a cool-down treatment at a third temperature and for a third time interval. Embodiments include performing steps (a)-(d) consecutively and in the same apparatus. Other embodiments include processing in an "on track" type automated semiconductor processing apparatus.
摘要翻译：通过以下步骤，在半导体晶片衬底的表面上形成包含基于苯并环丁烯（BCB）的低介电常数（低k）材料的电介质层：（a）在液体溶剂或分散剂载体中旋涂包含BCB的流体材料层在基材上（b）在第一温度和第一时间间隔烘烤涂覆的基材以除去溶剂; （c）通过在高于第一温度的第二温度下加热固化烘烤的涂层，并且持续第二时间间隔; 和（d）在其上固化的涂层对基板进行第三温度和第三时间间隔的冷却处理。实施例包括在相同的装置中连续执行步骤（a） - （d）。其他实施例包括在“轨道”型自动半导体处理装置中的处理。

3. 发明授权

US06530340B2 Apparatus for manufacturing planar spin-on films 有权
标题翻译：平面旋涂薄膜制造装置
公开(公告)号：US06530340B2
公开(公告)日：2003-03-11
申请号：US09190721
申请日：1998-11-12
申请人： Lu You , Dawn Hopper , Richard J. Huang
发明人： Lu You , Dawn Hopper , Richard J. Huang
IPC分类号： B05C1108
CPC分类号： H01L21/76801 , G03F7/16 , H01L21/6715
摘要： This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of deposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films. The methods of this invention enable the production of spin-on thin films, which have more even film thickness and uniformity. The semiconductor thin films produced by the methods of this invention are useful for the manufacture of semiconductor devices comprising interlevel dielectric materials.
摘要翻译：本发明描述了用于半导体薄膜的旋涂沉积的改进的装置和方法。改进的装置提供沉积室内的受控温度，压力和气体组成。改进的方法包括通过可移动的分配装置分配含有薄膜前体的溶液，以及仔细调节前体溶液沉积在晶片上的图案。本发明还包括仔细调节沉积变量，包括分配时间，晶片转速，停止时间和晶片旋转速率。在一个实施方案中，前体溶液从晶片的外边缘向中心分配。在替代实施例中，处理器调节分配臂和前驱泵的运动，以提供均匀分配的前体溶液层。本发明还描述了用于蒸发溶剂和固化薄膜的改进方法。本发明的方法能够生产具有更均匀的膜厚度和均匀性的旋涂薄膜。通过本发明的方法生产的半导体薄膜可用于制造包括层间电介质材料的半导体器件。

4. 发明授权

US06407009B1 Methods of manufacture of uniform spin-on films 有权
标题翻译：均匀旋涂膜的制造方法
公开(公告)号：US06407009B1
公开(公告)日：2002-06-18
申请号：US09190722
申请日：1998-11-12
申请人： Lu You , Dawn Hopper , Richard J. Huang
发明人： Lu You , Dawn Hopper , Richard J. Huang
IPC分类号： H01L2130
CPC分类号： H01L21/02134 , B05D1/005 , H01L21/02282 , H01L21/3124
摘要： This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of deposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films. The methods of this invention enable the production of spin-on thin films, which have more even film thickness and uniformity. The semiconductor thin films produced by the methods of this invention are useful for the manufacture of semiconductor devices comprising interlevel dielectric materials.
摘要翻译：本发明描述了用于半导体薄膜的旋涂沉积的改进的装置和方法。改进的装置提供沉积室内的受控温度，压力和气体组成。改进的方法包括通过可移动的分配装置分配含有薄膜前体的溶液，以及仔细调节前体溶液沉积在晶片上的图案。本发明还包括仔细调节沉积变量，包括分配时间，晶片转速，停止时间和晶片旋转速率。在一个实施方案中，前体溶液从晶片的外边缘向中心分配。在替代实施例中，处理器调节分配臂和前驱泵的运动，以提供均匀分配的前体溶液层。本发明还描述了用于蒸发溶剂和固化薄膜的改进方法。本发明的方法能够生产具有更均匀的膜厚度和均匀性的旋涂薄膜。通过本发明的方法生产的半导体薄膜可用于制造包括层间电介质材料的半导体器件。

5. 发明授权

US06387825B2 Solution flow-in for uniform deposition of spin-on films 有权
标题翻译：溶液流入用于均匀沉积旋涂膜
公开(公告)号：US06387825B2
公开(公告)日：2002-05-14
申请号：US09191435
申请日：1998-11-12
申请人： Lu You , Dawn Hopper , Richard J. Huang
发明人： Lu You , Dawn Hopper , Richard J. Huang
IPC分类号： H01L2131
CPC分类号： H01L21/02134 , B05D1/005 , H01L21/02282 , H01L21/312 , H01L21/3124
摘要： This invention describes improved apparatus and methods for spin-on deposition of thin films applicable to the manufacture of semiconductor devices. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of deposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films. The methods of this invention enable the production of spin-on thin films, which have more even film thickness and uniformity. The thin films produced by the methods of this invention are useful for the manufacture of semiconductor devices comprising interlevel dielectric materials.
摘要翻译：本发明描述了适用于制造半导体器件的薄膜的旋涂沉积的改进的装置和方法。改进的装置提供沉积室内的受控温度，压力和气体组成。改进的方法包括通过可移动的分配装置分配含有薄膜前体的溶液，以及仔细调节前体溶液沉积在晶片上的图案。本发明还包括仔细调节沉积变量，包括分配时间，晶片转速，停止时间和晶片旋转速率。在一个实施方案中，前体溶液从晶片的外边缘向中心分配。在替代实施例中，处理器调节分配臂和前驱泵的运动，以提供均匀分配的前体溶液层。本发明还描述了用于蒸发溶剂和固化薄膜的改进方法。本发明的方法能够生产具有更均匀的膜厚度和均匀性的旋涂薄膜。通过本发明的方法生产的薄膜可用于制造包括层间电介质材料的半导体器件。

6. 发明授权

US6030901A Photoresist stripping without degrading low dielectric constant materials 有权
标题翻译：光阻胶剥离而不降低低介电常数材料
公开(公告)号：US6030901A
公开(公告)日：2000-02-29
申请号：US339381
申请日：1999-06-24
申请人： Dawn Hopper , Richard J. Huang , Jacques Bertrand , Lu You
发明人： Dawn Hopper , Richard J. Huang , Jacques Bertrand , Lu You
IPC分类号： H01L21/311 , H01L21/312 , H01L21/768 , H01L21/3065
CPC分类号： H01L21/31138 , H01L21/31116 , H01L21/312 , H01L21/3124 , H01L21/76807
摘要： Photoresist masks are stripped using a H.sub.2 -N.sub.2 plasma to prevent increasing the dielectric constant of an exposed carbon-containing dielectric material. Embodiments of the present invention include forming a low dielectric constant, carbon-containing layer, e.g., a polymeric layer, on an exposed metal feature overlying a wafer, forming a photoresist mask on the dielectric layer, forming an opening in the dielectric layer exposing the metal feature and a portion of the dielectric layer, preheating the wafer and stripping the photoresist mask using the H.sub.2 -N.sub.2 plasma.
摘要翻译：使用H 2 -N 2等离子体剥离光刻胶掩模，以防止暴露的含碳介电材料的介电常数增加。本发明的实施例包括在覆盖在晶片上的暴露的金属特征上形成低介电常数的含碳层，例如聚合物层，在电介质层上形成光致抗蚀剂掩模，在电介质层中形成露出暴露于金属特征和电介质层的一部分，预热晶片并使用H 2 -N 2等离子体剥离光致抗蚀剂掩模。

7. 发明授权

US06225240B1 Rapid acceleration methods for global planarization of spin-on films 有权
标题翻译：用于旋涂膜全局平面化的快速加速方法
公开(公告)号：US06225240B1
公开(公告)日：2001-05-01
申请号：US09191101
申请日：1998-11-12
申请人： Lu You , Dawn Hopper , Richard J. Huang
发明人： Lu You , Dawn Hopper , Richard J. Huang
IPC分类号： H01L2131
CPC分类号： H01L21/02134 , B05D1/005 , H01L21/02282 , H01L21/31051 , H01L21/312 , H01L21/3124 , H01L21/3127
摘要： This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of desposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films. The methods of this invention enable the production of spin-on thin films, which have more even film thickness and uniformity. The semiconductor thin films produced by the methods of this invention are useful for the manufacture of semiconductor devices comprising interlevel dielectric materials.
摘要翻译：本发明描述了用于半导体薄膜的旋涂沉积的改进的装置和方法。改进的装置提供沉积室内的受控温度，压力和气体组成。改进的方法包括通过可移动分配装置分配含有薄膜前体的溶液，以及仔细调节前体溶液在晶片上的排列方式。本发明还包括仔细调节沉积变量，包括分配时间，晶片转速，停止时间和晶片旋转速率。在一个实施方案中，前体溶液从晶片的外边缘向中心分配。在替代实施例中，处理器调节分配臂和前驱泵的运动，以提供均匀分配的前体溶液层。本发明还描述了用于蒸发溶剂和固化薄膜的改进方法。本发明的方法能够生产具有更均匀的膜厚度和均匀性的旋涂薄膜。通过本发明的方法生产的半导体薄膜可用于制造包括层间电介质材料的半导体器件。

8. 发明授权

US06335533B1 Electron microscopy sample having silicon nitride passivation layer 失效
标题翻译：具有氮化硅钝化层的电子显微镜样品
公开(公告)号：US06335533B1
公开(公告)日：2002-01-01
申请号：US09206674
申请日：1998-12-07
申请人： Guarionex Morales , Dawn Hopper , Lu You
发明人： Guarionex Morales , Dawn Hopper , Lu You
IPC分类号： H01J3700
CPC分类号： G01N1/32 , H01J2237/28
摘要： A transmission electron microscopy (TEM) or scanning electron microscopy (SEM) sample preparation method includes the steps of depositing a metal layer on top of a substrate, depositing a silicon nitride passivation layer on top of the metal layer, and cutting the substrate and the metal and passivation layers to expose their cross-sections for examination by electron microscopy. As a result, a TEM/SEM sample having sharp, well-defined boundaries is produced.
摘要翻译：透射电子显微镜（TEM）或扫描电子显微镜（SEM）样品制备方法包括以下步骤：在衬底的顶部上沉积金属层，在金属层的顶部上沉积氮化硅钝化层，以及切割衬底和金属和钝化层以暴露其横截面以通过电子显微镜检查。结果，产生具有清晰明确界限的TEM / SEM样品。

9. 发明授权

US06784095B1 Phosphine treatment of low dielectric constant materials in semiconductor device manufacturing 有权
标题翻译：半导体器件制造中低介电常数材料的磷化处理
公开(公告)号：US06784095B1
公开(公告)日：2004-08-31
申请号：US10073066
申请日：2002-02-12
申请人： Suzette K. Pangrle , Minh Van Ngo , Dawn Hopper , Lu You
发明人： Suzette K. Pangrle , Minh Van Ngo , Dawn Hopper , Lu You
IPC分类号： H01L214767
CPC分类号： H01L21/76831 , H01L21/76826 , H01L21/76829
摘要： Improved dielectric layers are formed by surface treating the dielectric layer with a phosphine plasma prior to forming a barrier layer thereon. Embodiments include forming a trench in a low k dielectric layer and modifying the side surfaces of the trench by subjecting the dielectric to a phosphine plasma produced in PECVD chamber. A conductive feature is formed by depositing a conformal barrier layer on the low k dielectric including the treated side surfaces of the dielectric and depositing a copper containing layer within the trench.
摘要翻译：通过在其上形成阻挡层之前用磷化氢等离子体表面处理电介质层来形成改进的电介质层。实施例包括在低k电介质层中形成沟槽，并通过对PECVD室中产生的磷化氢等离子体进行电介质修饰沟槽的侧表面。通过在包括电介质处理的侧表面的低k电介质上沉积共形阻挡层并在沟槽内沉积含铜层来形成导电特征。

10. 发明授权

US06566283B1 Silane treatment of low dielectric constant materials in semiconductor device manufacturing 有权
标题翻译：半导体器件制造中低介电常数材料的硅烷处理
公开(公告)号：US06566283B1
公开(公告)日：2003-05-20
申请号：US10073068
申请日：2002-02-12
申请人： Suzette K. Pangrle , Minh Van Ngo , Dawn Hopper , Lu You
发明人： Suzette K. Pangrle , Minh Van Ngo , Dawn Hopper , Lu You
IPC分类号： H01L2131
CPC分类号： H01L21/76831 , H01L21/31058 , H01L21/76802 , H01L21/76826
摘要： Improved dielectric layers are formed by surface treating the dielectric layer with a silane plasma prior to forming a subsequent layer thereon. Embodiments include forming a trench in a low k dielectric layer and modifying the side surfaces of the trench by subjecting the dielectric to a silane plasma produced in a PECVD chamber. A conductive feature is formed by depositing a conformal barrier layer on the low k dielectric including the treated side surfaces of the dielectric and depositing a conductive layer within the trench.
摘要翻译：通过在形成其之后的层之前用硅烷等离子体表面处理电介质层来形成改进的电介质层。实施例包括在低k电介质层中形成沟槽，并通过对电介质进行在PECVD室中产生的硅烷等离子体来修饰沟槽的侧表面。通过在包括电介质处理的侧表面的低k电介质上沉积共形阻挡层并在沟槽内沉积导电层来形成导电特征。

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