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    • 1. 发明授权
    • Ceramic ferrite/ferroelectric composite material
    • 陶瓷铁氧体/铁电复合材料
    • US6063719A
    • 2000-05-16
    • US144982
    • 1998-09-01
    • Louise C. SenguptaSomnath Sengupta
    • Louise C. SenguptaSomnath Sengupta
    • C04B35/26H01F1/03C04B35/468C04B35/47
    • H01F1/0315C04B35/2683
    • A novel ceramic ferrite/ferroelectric composite material having a low dissipation factor, voltage tunability, and proper impedance matching for the incident medium. The material comprises ferrites doped with the ferroelectric Barium Strontium Titanate (BSTO) or ferrites doped with the ferroelectric Barium Strontium Titanate (BSTO)/MgO. Preferred composites are magnesium ferrites doped with BSTO and magnesium ferrites doped with BSTO/MgO. Most particularly, the inventive composites are comprised of magnesium ferrites doped with Ba.sub.1-x Sr.sub.x TiO.sub.3 and magnesium ferrites doped with Ba.sub.1-x Sr.sub.x TiO.sub.3 /MgO, wherein x is greater than 0.00, but less than or equal to 0.75, and wherein the percent weight ratio of magnesium ferrite to BSTO or BSTO/MgO is 60 to 95 percent ferrite to 40 to 5 percent BSTO or 60 to 95 percent ferrite to 40 to 5 percent BSTO/MgO ferroelectric. A particularly well suited composite, i.e., one having a .mu./.di-elect cons. ratio close to unity, comprises 80 weight percent magnesium ferrite and 20 weight percent BSTO/MgO, wherein said BSTO/MgO comprises 80 weight percent Ba.sub.0.6 Sr.sub.0.4 TiO.sub.3 combined with 20 weight percent MgO.
    • 一种新颖的陶瓷铁氧体/铁电复合材料,具有低的损耗因子,电压可调性和对入射介质的适当阻抗匹配。 该材料包括掺杂有铁电的钛酸钡锶(BSTO)的铁氧体或掺有铁电的锶钡(BSTO)/ MgO的铁氧体。 优选的复合材料是掺杂有BSTO的镁铁氧体和掺杂有BSTO / MgO的镁铁氧体。 最具体地,本发明的复合材料包括掺杂有Ba1-xSrxTiO3的镁铁氧体和掺杂有Ba1-xSrxTiO3 / MgO的镁铁氧体,其中x大于0.00,但小于或等于0.75,并且其中镁的百分比重量比 BSTO或BSTO / MgO的铁素体为铁素体为60〜95%,BSTO为40〜5%,铁素体为60〜95%,BSTO / MgO铁电体为40〜5%。 一种特别适合的复合材料,即一种接近一致的μ/ + 531比率的复合材料,包含80重量%的铁素体和20重量%的BSTO / MgO,其中所述BSTO / MgO包括80重量百分比的Ba0.6Sr0.4TiO3与 20重量%MgO。
    • 3. 发明授权
    • Ceramic ferroelectric composite materials with enhanced electronic
properties BSTO-Mg based compound-rare earth oxide
    • 具有增强电子性能的陶瓷铁电复合材料BSTO-Mg基复合稀土氧化物
    • US6074971A
    • 2000-06-13
    • US191546
    • 1998-11-13
    • Luna H. ChiuLouise C. SenguptaSteven StowellSomnath SenguptaJennifer Synowczynski
    • Luna H. ChiuLouise C. SenguptaSteven StowellSomnath SenguptaJennifer Synowczynski
    • C04B35/053C04B35/465C04B35/468C04B35/47
    • C04B35/053C04B35/465
    • Ceramic ferroelectric composite materials comprising barium strontium titte/magnesium and oxygen-containing compound composite further doped with rare earth (lanthanide) oxides. More particularly, these inventive composites are comprised of Ba.sub.1-x Sr.sub.x TiO.sub.3 /Mg--O based compound/rare earth oxide composite, wherein x is greater than or equal to 0.0 but less than or equal to 1.0, and wherein the weight ratio of BSTO to Mg compound may range from 99.75-20 wt. % BSTO to 0.25-80 wt. % Mg compound, and wherein said rare earth oxide additive comprises less than about 10 mole percent of the composite. The rare earth oxides of the composite include all oxides of the lanthanide series elements including scandium and yttrium, as well as combinations thereof. The magnesium-based compound may be selected from the group consisting of MgO, MgZrO.sub.3, MgZrSrTiO.sub.3, MgTiO.sub.3, and MgCO.sub.3. This new class of composite materials has enhanced electronic properties including: low dielectric constants; substantially decreased electronic loss (low loss tangents); increased tunability; increased temperature stability; decreased sintering temperatures; and low curie temperatures. The electronic properties of these new materials can be tailored for various applications including phased array antenna systems, capacitors, transmission wire, wireless communication, and pyroelectric guidance devices.
    • 包含钛酸锶钡/镁的陶瓷铁电复合材料和进一步掺杂稀土(镧系元素)氧化物的含氧化合物复合材料。 更具体地说,这些本发明的复合材料包括Ba1-xSrxTiO3 / Mg-O基化合物/稀土氧化物复合材料,其中x大于或等于0.0但小于或等于1.0,并且其中BSTO与Mg的重量比 化合物可以为99.75-20wt。 %BSTO为0.25-80wt。 %Mg化合物,并且其中所述稀土氧化物添加剂包含小于约10摩尔%的复合材料。 复合材料的稀土氧化物包括镧系元素的所有氧化物,包括钪和钇,以及它们的组合。 镁基化合物可以选自MgO,MgZrO3,MgZrSrTiO3,MgTiO3和MgCO3。 这种新型复合材料具有增强的电子性能,包括:低介电常数; 电子损失大幅减少(低损耗切线); 增加可调性; 提高温度稳定性; 降低烧结温度; 和低居里温度。 这些新材料的电子特性可以适用于各种应用,包括相控阵天线系统,电容器,传输线,无线通信和热释电引导装置。
    • 5. 发明授权
    • Ferroelectric varactor with built-in DC blocks
    • 铁电变容二极管内置直流电阻
    • US06727535B1
    • 2004-04-27
    • US09434433
    • 1999-11-04
    • Louise C. SenguptaSteven C. StowellYongfei ZhuSomnath Sengupta
    • Louise C. SenguptaSteven C. StowellYongfei ZhuSomnath Sengupta
    • H01L2976
    • H01L27/016H01G7/06H01L29/93
    • A voltage tunable dielectric varactor includes a tunable ferroelectric layer and first and second non-tunable dielectric layers. First and second electrodes positioned adjacent to the tunable ferroelectric layer form a tunable capacitor. A third electrode is positioned adjacent to the first non-tunable dielectric layer such that the third and first electrodes and the first non-tunable dielectric layer form a first blocking capacitor. A fourth electrode is positioned adjacent to the second non-tunable dielectric layer such that the fourth and second electrodes and the second non-tunable dielectric layer form a second blocking capacitor. The first and second electrodes can be positioned on a surface of the tunable ferroelectric layer opposite the generally planar surface of the substrate, with the first and second electrodes being separated to form a gap. The first and second non-tunable dielectric layers can also be positioned on the generally planar surface of the substrate. The third electrode can be positioned on the surface of the first non-tunable dielectric layer opposite the generally planar surface of the substrate such that the third and first electrodes form a second gap. The fourth electrode can be positioned on the surface of the second non-tunable dielectric layer opposite the generally planar surface of the substrate such that the fourth and second electrodes form a third gap.
    • 电压可调介质变容二极管包括可调谐铁电层和第一和第二不可调电介质层。 位于与可调谐铁电体层相邻的第一和第二电极形成可调电容器。 第三电极定位成与第一非可调电介质层相邻,使得第三电极和第一电极和第一非可调电介质层形成第一阻塞电容器。 第四电极定位成与第二非可调电介质层相邻,使得第四和第二电极和第二非可调电介质层形成第二阻塞电容器。 第一和第二电极可以位于与基板的大致平坦的表面相对的可调谐铁电层的表面上,其中第一和第二电极被分离以形成间隙。 第一和第二非可调电介质层也可以位于基底的大致平坦的表面上。 第三电极可以位于与基板的大致平坦的表面相对的第一非可调电介质层的表面上,使得第三和第一电极形成第二间隙。 第四电极可以位于与基板的大致平坦的表面相对的第二非可调电介质层的表面上,使得第四和第二电极形成第三间隙。