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    • 9. 发明授权
    • Process for fabricating a nanowire-based vertical transistor structure
    • 用于制造基于纳米线的垂直晶体管结构的工艺
    • US08138046B2
    • 2012-03-20
    • US12278173
    • 2007-02-05
    • Didier PribatCostel-Sorin Cojocaru
    • Didier PribatCostel-Sorin Cojocaru
    • H01L21/336
    • H01L51/0512B82Y10/00H01L29/0665H01L29/0673H01L29/0676H01L29/7827H01L29/78642H01L51/0048
    • The invention relates to a process for fabricating a vertical transistor structure. On a substrate (10), is a first conductive layer (11), providing the source or drain electrode function, and an upper conductive layer (17), providing the drain or source electrode function. The production of a membrane includes a stack of porous layers including a first insulating layer (20), a second conductive layer (12), providing the gate electrode function, and an upper insulating layer (13′) on the surface of the substrate covered with the first conductive layer (11) providing the drain or source electrode function. The porous layers having substantially stacked pores. The production of filaments made of a semiconductor material is inside some of the stacked pores of the porous layers. The production of the upper conductive layer provides the source or drain electrode function on the surface of the stack of porous layers filled with filaments made of semiconductor material.
    • 本发明涉及制造垂直晶体管结构的方法。 在基板(10)上,提供源极或漏极功能的第一导电层(11)和提供漏极或源极功能的上导电层(17)。 膜的制造包括一堆多孔层,包括提供栅电极功能的第一绝缘层(20),第二导电层(12)和覆盖在衬底的表面上的上绝缘层(13') 其中第一导电层(11)提供漏极或源极电极功能。 多孔层具有基本上层叠的孔。 由半导体材料制成的细丝的制造在多孔层的一些堆叠的孔内。 上导电层的制造在填充有由半导体材料制成的细丝的多孔层的堆叠的表面上提供源极或漏极功能。
    • 10. 发明授权
    • Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier
    • 包含NiSi合金扩散阻挡层的纳米管或纳米纤维的催化生长方法
    • US07491269B2
    • 2009-02-17
    • US10497079
    • 2002-12-03
    • Pierre LegagneuxDidier PribatYannig Nedellec
    • Pierre LegagneuxDidier PribatYannig Nedellec
    • C30B29/62
    • B82Y30/00B82Y40/00C01B32/162C30B11/00C30B11/12C30B29/36C30B29/52C30B29/605D01F9/127
    • The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of the upper layer, of a barrier layer made of an alloy of the first material and of a second material, said alloy being stable at a first temperature; the formation of spots of catalyst that are made of the second material, on the surface of the alloy layer; and the growth of nanotubes or nanofibers at a second temperature below said first temperature. The alloy layer allows effective growth of nanotubes/nanofibers from catalyst spots on the surface of said alloy layer. This is because the alloy layer constitutes a diffusion barrier preventing the catalyst from diffusing into the growth substrate, which barrier is stable at the catalytic nanotube/nanofiber growth temperature.
    • 本发明涉及一种用于在基材上生长纳米管或纳米纤维的方法,该方法至少包括由第一材料制成的上层,其中:在上层的表面上形成由合金形成的阻挡层 所述第一材料和第二材料,所述合金在第一温度下是稳定的; 在合金层的表面上形成由第二材料制成的催化剂斑点; 以及在低于所述第一温度的第二温度下纳米管或纳米纤维的生长。 合金层允许纳米管/纳米纤维从所述合金层表面上的催化剂点有效生长。 这是因为合金层构成阻止催化剂扩散到生长衬底中的扩散阻挡层,该阻挡层在催化纳米管/纳米纤维生长温度下是稳定的。