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    • 1. 发明申请
    • Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures
    • 具有自对准掺杂区域的半导体器件结构和用于形成这种半导体器件结构的方法
    • US20070235833A1
    • 2007-10-11
    • US11393142
    • 2006-03-30
    • Kangguo ChengLouis HsuJack Mandelman
    • Kangguo ChengLouis HsuJack Mandelman
    • H01L29/00
    • H01L27/10841H01L27/10864
    • Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures. The semiconductor structure comprises first and second doped regions of a first conductivity type defined in the semiconductor material of a substrate bordering a sidewall of a trench. An intervening region of the semiconductor material separates the first and second doped regions. A third doped region is defined in the semiconductor material bordering the sidewall of the trench and disposed between the first and second doped regions. The third doped region is doped to have a second conductivity type opposite to the first conductivity type. Methods for forming the doped regions involve depositing either a layer of a material doped with both dopants or different layers each doped with one of the dopants in the trench and, then, diffusing the dopants from the layer or layers into the semiconductor material bordering the trench sidewall.
    • 具有自对准掺杂区域的半导体器件结构和用于形成这种半导体器件结构的方法。 半导体结构包括限定在与沟槽的侧壁相邻的衬底的半导体材料中的第一导电类型的第一和第二掺杂区域。 半导体材料的中间区域分离第一和第二掺杂区域。 第三掺杂区域限定在与沟槽的侧壁接壤并且设置在第一和第二掺杂区域之间的半导体材料中。 第三掺杂区被掺杂以具有与第一导电类型相反的第二导电类型。 用于形成掺杂区域的方法包括沉积掺杂有掺杂剂或不同层的材料的层,每个掺杂剂或不同的层在沟槽中掺杂有一种掺杂剂,然后将掺杂剂从层或层扩散到与沟槽接壤的半导体材料 侧壁。
    • 2. 发明申请
    • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
    • 具有保形熔丝元件的电子保险丝,形成在独立电介质垫片上
    • US20070210890A1
    • 2007-09-13
    • US11372387
    • 2006-03-09
    • Louis HsuJack MandelmanWilliam TontiChih-Chao Yang
    • Louis HsuJack MandelmanWilliam TontiChih-Chao Yang
    • H01H85/04
    • H01L23/5256H01L2924/0002Y10T29/49107H01L2924/00
    • An electronic fuse for an integrated circuit and a method of fabrication thereof are presented. The electronic fuse has a first terminal portion and a second terminal portion interconnected by a fuse element. The fuse element has a convex upper surface and a lower surface with a radius of curvature at a smallest surface area of curvature less than or equal to 100 nanometers. Fabricating the electronic fuse includes forming an at least partially freestanding dielectric spacer above a supporting structure, and then conformably forming the fuse element of the fuse over at least a portion of the freestanding dielectric spacer, with the fuse element characterized as noted above. The dielectric spacer may remain in place as a thermally insulating layer underneath the fuse element, or may be removed to form a void underneath the fuse element.
    • 本发明提供一种用于集成电路的电子熔断器及其制造方法。 电子熔断器具有由熔丝元件互连的第一端子部分和第二端子部分。 保险丝元件具有凸起的上表面和具有小于或等于100纳米的曲率的最小表面积的曲率半径的下表面。 制造电子熔断器包括在支撑结构之上形成至少部分独立的介电隔离物,然后在独立电介质隔离物的至少一部分上顺应地形成熔丝的熔丝元件,其中熔丝元件的特征如上所述。 电介质间隔物可以保留在熔丝元件下面的绝热层的适当位置,或者可以被去除以在熔丝元件下面形成空隙。