会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Treadmill
    • 跑步机
    • US07357758B2
    • 2008-04-15
    • US10215794
    • 2002-08-08
    • Louis F. Polk, IIIPaul M. TheisenRandy WilliamsKenneth V. SchomburgKevin StevensDarrin Swagel
    • Louis F. Polk, IIIPaul M. TheisenRandy WilliamsKenneth V. SchomburgKevin StevensDarrin Swagel
    • A63B22/02
    • A63B22/0023A63B22/0235A63B2210/50
    • A treadmill is provided that has a treadmill drive motor carriage that can pivot relative to a frame of the treadmill such that the incline of the treadmill can be controlled while the carriage can be moved to a position that permits upright storage of the treadmill on the carriage. This arrangement advantageously permits a walk through treadmill design to be used that can be stored uprightly. The treadmill can be equipped with a console and stanchion that can be folded against the deck of the treadmill. One incline arrangement pivots the carriage using an incline drive carried by the carriage that engages a gear grounded to the treadmill frame. Another preferred incline arrangement uses a four bar linkage movable carried by the frame that is driven by a linear actuator to pivot the carriage.
    • 提供了一种跑步机,其具有可相对于跑步机的框架枢转的跑步机驱动电动机滑架,使得可以控制踏车的倾斜度,同时可将滑架移动到允许跑步机直立存放在滑架上的位置 。 这种安排有利地允许通过可以直立地存储的使用的跑步机设计的步行。 跑步机可以配备一个可以与跑步机的甲板折叠的控制台和支柱。 一个倾斜装置使用由托架承载的倾斜驱动器使托架枢转,该斜面驱动器接合到踏板架上的齿轮。 另一个优选的倾斜布置使用可由框架承载的四杆连杆,其由线性致动器驱动以使托架枢转。
    • 2. 发明申请
    • Bipolar transistor with graded base layer
    • 具有分级基极层的双极晶体管
    • US20050139863A1
    • 2005-06-30
    • US10969804
    • 2004-10-20
    • Roger WelserPaul DeLucaCharles LutzKevin StevensNoren Pan
    • Roger WelserPaul DeLucaCharles LutzKevin StevensNoren Pan
    • H01L21/331H01L29/10H01L29/20H01L29/737H01L31/0328
    • H01L29/1004H01L29/2003H01L29/66318H01L29/7371
    • A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.
    • 具有高碳掺杂浓度的半导体材料包括镓,铟,砷和氮。 所公开的半导体材料由于获得的高碳掺杂剂浓度而具有低的薄层电阻率。 该材料可以是基于砷化镓的异质结双极晶体管的基极层,并且可以通过控制基极层中的铟和氮的浓度而与砷化镓发射极和/或集电极层晶格匹配。 基层可以具有渐变带隙,其通过改变用于减少相对于表示该层的主体的不同III-V元素的带隙的III和V添加元素的沉积期间的流速而形成。 III和V添加元素的流速在沉积期间保持基本恒定的掺杂迁移率产物值,并且可以调节以在所得晶体管内的结处获得预选的基极 - 发射极电压。