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1. 发明授权

US07108755B2 Simplification of ball attach method using super-saturated fine crystal flux 有权
标题翻译：使用超饱和微晶焊剂简化球贴法
公开(公告)号：US07108755B2
公开(公告)日：2006-09-19
申请号：US10208330
申请日：2002-07-30
申请人： Li Ann Wetz , Lizabeth Ann Keser , Rajiv Bajaj , Treliant Fang
发明人： Li Ann Wetz , Lizabeth Ann Keser , Rajiv Bajaj , Treliant Fang
IPC分类号： B23K1/20 , B23K35/363 , C11D7/26
CPC分类号： B23K35/362 , B23K35/3618
摘要： A method for preparing a metal surface (34) for a soldering operation is provided. In accordance with the method, the metal surface is treated with a solder flux (31) comprising a supersaturated solution of a carboxylic acid.
摘要翻译：提供了一种用于制备用于焊接操作的金属表面（34）的方法。根据该方法，用包含羧酸过饱和溶液的焊剂（31）处理金属表面。

2. 发明授权

US06458622B1 Stress compensation composition and semiconductor component formed using the stress compensation composition 有权
标题翻译：应力补偿组成和使用应力补偿组成形成的半导体部件
公开(公告)号：US06458622B1
公开(公告)日：2002-10-01
申请号：US09348737
申请日：1999-07-06
申请人： Lizabeth Ann Keser , Treliant Fang
发明人： Lizabeth Ann Keser , Treliant Fang
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L21/02118 , H01L21/312 , H01L2224/0231 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/13022 , H01L2224/131 , H01L2924/00013 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2224/13099 , H01L2924/00014
摘要： A semiconductor component (10) having a photodefinable stress compensation layer (21) and composition for the stress compensation material. The photodefinable stress compensation material is formed on a semiconductor wafer (11) and openings (22) are made photolithographically. Conductive bumps (26) are then disposed thereon and additional conductive bumps (28) are formed on the original conductive bumps (26). The photodefinable stress compensation material is composed of a photoinitiator, an epoxy having a first index of refraction, a diluent, and a filler. The indices of refraction of the epoxy-diluent combination and the filler are approximately equal. Alternatively, the photodefinable stress compensation material can be formed on a semiconductor wafer (11) having conductive bumps (46) disposed thereon. Openings (49) are formed in the stress compensation layer (47) to expose the conductive bumps (46). Additional conductive bumps (51) are formed on the original conductive bumps (46).
摘要翻译：具有可光分解应力补偿层（21）的半导体部件（10）和用于应力补偿材料的组合物。可光限定应力补偿材料形成在半导体晶片（11）上，并且光刻地形成开口（22）。然后将导电凸块（26）设置在其上，并且在原始导电凸块（26）上形成附加的导电凸块（28）。光可分解应力补偿材料由光引发剂，具有第一折射率的环氧树脂，稀释剂和填料组成。环氧 - 稀释剂组合和填料的折射率近似相等。或者，光可分解应力补偿材料可以形成在其上设置有导电凸块（46）的半导体晶片（11）上。开口（49）形成在应力补偿层（47）中以露出导电凸块（46）。附加的导电凸块（51）形成在原始导电凸块（46）上。

3. 发明申请

US20100253375A1 ANCHORING CARBON NANOTUBE COLUMNS 有权
标题翻译：固定碳纳米管柱
公开(公告)号：US20100253375A1
公开(公告)日：2010-10-07
申请号：US12418438
申请日：2009-04-03
申请人： Treliant Fang , Michael Harburn , Onnik Yaglioglu
发明人： Treliant Fang , Michael Harburn , Onnik Yaglioglu
IPC分类号： G01R31/02 , H01R13/02 , B32B7/00 , B82B1/00 , B82B3/00
CPC分类号： G01R3/00 , B81C1/00031 , G01R1/0483 , G01R1/06744 , G01R1/07314 , H05K3/4007 , H05K2201/026 , H05K2201/0323 , H05K2201/0367 , H05K2201/10977 , H05K2203/0338 , Y10T29/49147 , Y10T29/49204 , Y10T29/49208 , Y10T29/4921 , Y10T29/49222 , Y10T428/24174
摘要： A technique for anchoring carbon nanotube columns to a substrate can include use of a filler material placed onto the surface of the substrate into area between the columns and surrounding a base portion of each of the columns.
摘要翻译：用于将碳纳米管柱锚定到基底的技术可以包括使用放置在基底表面上的填充材料到列之间的区域并围绕每个柱的基部。

4. 发明授权

US06840374B2 Apparatus and method for cleaning test probes 失效
标题翻译：测试探针清洗装置及方法
公开(公告)号：US06840374B2
公开(公告)日：2005-01-11
申请号：US10050908
申请日：2002-01-18
申请人： Igor Y. Khandros , Benjamin N. Eldridge , Treliant Fang , Gaetan L. Mathieu , Gary W. Grube , Michael A. Drush , Christopher C. Buckholtz
发明人： Igor Y. Khandros , Benjamin N. Eldridge , Treliant Fang , Gaetan L. Mathieu , Gary W. Grube , Michael A. Drush , Christopher C. Buckholtz
IPC分类号： A47L25/00 , B08B1/00 , B08B7/00 , C08L83/05 , C08L83/07 , C08L83/08 , G01R1/067 , G01R3/00 , H01L21/304 , H01L21/66 , B65D69/00 , B32B5/00 , B32B9/04
CPC分类号： C08G77/48 , B08B1/00 , B08B7/0028 , G01R1/06711 , G01R3/00 , Y10T428/24388 , Y10T428/31663
摘要： A probe cleaning apparatus for cleaning a probe tip use to test semiconductors dies having an abrasive substrate layer an a tacky gel layer on top of the abrasive surface of the abrasive substrate layer. The probe tip is cleaned by passing it through the tacky gel layer so that it comes in contact with the abrasive surface of the abrasive substrate, moving the probe tip across the abrasive surface of the substrate layer, and then removing the probe tip from the successive layers of the cleaning apparatus. The probe tip emerges from the cleaning apparatus free from debris associated with testing the semiconductor dies.
摘要翻译：用于清洁探针头的探针清洁装置用于测试在磨料基底层的研磨表面的顶部上具有磨料基底层和粘性凝胶层的半导体模具。通过将探针尖端通过粘性凝胶层进行清洁，使其与磨料基材的研磨表面接触，使探针尖端跨过基底层的研磨表面，然后从连续的层的清洁装置。探针尖端从清洁设备中出来，没有与测试半导体管芯相关的碎片。

5. 发明授权

US06664200B1 Method of manufacturing a semiconductor component and polyimide etchant therefor 有权
标题翻译：制造半导体元件的方法和用于其的聚酰亚胺蚀刻剂
公开(公告)号：US06664200B1
公开(公告)日：2003-12-16
申请号：US09560974
申请日：2000-04-28
申请人： Edward R. Prack , Frank W. Fischer , Treliant Fang
发明人： Edward R. Prack , Frank W. Fischer , Treliant Fang
IPC分类号： H01L2131
CPC分类号： C08J7/12 , C08J2379/08 , H01L21/02118 , H01L21/31058 , H01L21/312 , Y10S148/075
摘要： A method of manufacturing a semiconductor component having a layer (240, 340) comprised of polyimide includes using an etchant that is at least partially composed of aminopropanediol to etch the layer comprised of polyimide. The etchant can also include a solvent, a diluent, and water.
摘要翻译：制造具有由聚酰亚胺构成的层（240,340）的半导体部件的方法包括使用至少部分由氨基丙二醇构成的蚀刻剂来蚀刻由聚酰亚胺构成的层。蚀刻剂还可以包括溶剂，稀释剂和水。

6. 发明授权

US5208892A Triazine optical waveguides 失效
标题翻译：三嗪光波导
公开(公告)号：US5208892A
公开(公告)日：1993-05-04
申请号：US859758
申请日：1992-03-30
申请人： John J. Burack , Treliant Fang , Jane D. LeGrange , Jose A. Ors
发明人： John J. Burack , Treliant Fang , Jane D. LeGrange , Jose A. Ors
IPC分类号： C07D251/34 , C08G73/06 , G02F1/361
CPC分类号： G02F1/3612 , C07D251/34 , C08G73/0655 , G02F1/3616
摘要： An optical waveguide (11) is composed substantially entirely of triazine.
摘要翻译：光波导（11）基本上完全由三嗪组成。

7. 发明授权

US5119228A Nonlinear optical devices 失效
标题翻译：非线性光学器件
公开(公告)号：US5119228A
公开(公告)日：1992-06-02
申请号：US708575
申请日：1991-05-31
申请人： Treliant Fang
发明人： Treliant Fang
IPC分类号： C07D251/34 , C08G73/06 , G02F1/361
CPC分类号： C08G73/0655 , C07D251/34 , G02F1/3612 , G02F1/3616 , Y10T428/31504
摘要： Optically nonlinear device elements such as directional couplers, switches, frequency stabilizers, optical parametric devices and modulators use as an optically nonlinear element a cross-linked triazine polymer containing a covalently bonded optically nonlinear dye moiety. A specific cross-linked triazine with this dye moiety may be made by cyclotrimerizing a p-(N,N-bis(4'-cyanatobenzyl)amino)-p'-(2,2-dicyanovinyl)azobenzene monomer. During polycyclotrimmerization or cure, the element is subjected to a poling voltage which aligns the dipoles of the dye moiety to give a large useful nonlinear susceptibility.
摘要翻译：诸如定向耦合器，开关，频率稳定器，光学参数装置和调制器之类的光学非线性器件元件用作含有共价键合的光学非线性染料部分的交联三嗪聚合物作为光学非线性元件。具有该染料部分的具体的交联三嗪可以通过对p-（N，N-双（4'-氰基苄基）氨基）-p' - （2,2-二氰基乙烯基）偶氮苯单体进行环化三聚体来制备。在多环多胺化或固化过程中，该元件经受极化电压，其使染料部分的偶极子对准以产生大的有用的非线性磁化率。

8. 发明授权

US09944829B2 Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer 有权
公开(公告)号：US09944829B2
公开(公告)日：2018-04-17
申请号：US15332966
申请日：2016-10-24
申请人： Treliant Fang
发明人： Treliant Fang
IPC分类号： B44C1/22 , C23F1/00 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461 , C09K13/00 , C09G1/02 , B24C11/00 , H01L21/321 , C09G1/00 , C09G1/04 , H01L21/02 , H01L21/306
CPC分类号： C09G1/02 , B24C11/00 , C09G1/00 , C09G1/04 , C09K3/1409 , C09K3/1463 , C09K3/1472 , H01L21/02013 , H01L21/02024 , H01L21/30625 , H01L21/3212
摘要： Silicon carbide (SiC) etchants with a generic formula of MXO2, where M is an alkali metal, X is a halogen, O is oxygen are disclosed. When mixed with an abrasive powder in an aqueous slurry form, this MXO2 etchant acts as tribochemical reactant in enhancing the SiC material removal rate during chemical mechanical polishing (CMP). The material removal rates can sometimes go up to a few order of magnitudes, as compared to the slurry without this MXO2 etchant. Typical metal in the formula MXO2 are K (potassium) and Na (sodium), X includes Cl (chlorine), Br (bromine) and I (iodine). The whole series of MXO2 compounds belong to the chemical family of metal halites or ammonium halites. Sodium chlorite, NaClO2, the simplest and most available member of the halite family, is a typical example. The enhanced polishing rate can be utilized to significantly increase the throughput of CMP operation for non-oxide wafer polishing. The polishing waste water from the CMP process can be treated with ease in the waste water treatment facilities because of the absence of toxic heavy metal ions in the polishing formulations.

9. 发明授权

US08872176B2 Elastic encapsulated carbon nanotube based electrical contacts 有权
标题翻译：弹性封装碳纳米管基电触点
公开(公告)号：US08872176B2
公开(公告)日：2014-10-28
申请号：US13253665
申请日：2011-10-05
申请人： Treliant Fang , John K. Gritters , Onnik Yaglioglu
发明人： Treliant Fang , John K. Gritters , Onnik Yaglioglu
IPC分类号： H01L23/58 , H01L29/10 , B82Y10/00 , G01R1/067 , G01R31/28
CPC分类号： G01R1/06744 , B82Y10/00 , G01R31/2886 , H01L2224/13 , H01L2924/00013 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： Contacts of an electrical device can be made of carbon nanotube columns. Contact tips can be disposed at ends of the columns. The contact tips can be made of an electrically conductive paste applied to the ends of the columns and cured (e.g., hardened). The paste can be applied, cured, and/or otherwise treated to make the contact tips in desired shapes. The carbon nanotube columns can be encapsulated in an elastic material that can impart the dominant mechanical characteristics, such as spring characteristics, to the contacts. The contacts can be electrically conductive and can be utilized to make pressure-based electrical connections with electrical terminals or other contact structures of another device.
摘要翻译：电气装置的触点可以由碳纳米管柱制成。接触尖端可以放在柱的末端。接触尖端可以由施加到柱的端部并被固化（例如硬化）的导电浆料制成。可以施加，固化和/或以其他方式处理糊状物以使接触尖端成为所需形状。碳纳米管柱可以被包封在弹性材料中，该弹性材料可以赋予触点更大的机械特性，例如弹簧特性。触点可以是导电的，并且可以用于与电端子或另一器件的其它接触结构进行基于压力的电连接。

10. 发明申请

US20090197484A1 CARBON NANOTUBE SPRING CONTACT STRUCTURES WITH MECHANICAL AND ELECTRICAL COMPONENTS 有权
标题翻译：碳纳米管弹簧接触结构与机械和电气部件
公开(公告)号：US20090197484A1
公开(公告)日：2009-08-06
申请号：US12421805
申请日：2009-04-10
申请人： Jimmy K. Chen , Treliant Fang , Michael Harburn , Igor Y. Khandros , Rodney I. Martens , Gaetan L. Mathieu , Alexander Slocum , Onnik Yaglioglu
发明人： Jimmy K. Chen , Treliant Fang , Michael Harburn , Igor Y. Khandros , Rodney I. Martens , Gaetan L. Mathieu , Alexander Slocum , Onnik Yaglioglu
IPC分类号： H01R13/02 , H01R43/16
CPC分类号： G01R1/06716 , G01R1/06744 , G01R1/06755 , G01R1/07357 , H01L23/49811 , H01L24/72 , H01L2924/01078 , H01L2924/01079 , H01L2924/19107 , Y10T29/49204
摘要： A composite spring contact structure includes a structural component and a conduction component distinct from each other and having differing mechanical and electrical characteristics. The structural component can include a group of carbon nanotubes. A mechanical characteristic of the composite spring contact structure can be dominated by a mechanical characteristic of the structural component, and an electrical characteristic of the composite spring contact structure can be dominated by an electrical characteristic of the conduction component. Composite spring contact structures can be used in probe cards and other electronic devices. Various ways of making contact structures are also disclosed.
摘要翻译：复合弹簧接触结构包括彼此不同的并具有不同机械和电特性的结构部件和导电部件。结构组分可以包括一组碳纳米管。复合弹簧接触结构的机械特性可以由结构部件的机械特性主导，并且复合弹簧接触结构的电特性可以由导电部件的电特性来支配。复合弹簧接触结构可用于探针卡和其他电子设备。还公开了制备接触结构的各种方式。

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