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    • 4. 发明授权
    • SiGe HBT and method of manufacturing the same
    • SiGe HBT及其制造方法
    • US09012279B2
    • 2015-04-21
    • US13613236
    • 2012-09-13
    • Donghua LiuWenting DuanWensheng QianJun HuJing Shi
    • Donghua LiuWenting DuanWensheng QianJun HuJing Shi
    • H01L21/8238H01L29/66H01L29/737H01L29/08
    • H01L29/66242H01L29/0821H01L29/7371
    • A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.
    • 公开了一种SiGe HBT,其包括:硅衬底; 形成在硅衬底中的浅沟槽场氧化物; 形成在每个浅沟槽场氧化物的底部的伪掩埋层; 形成在所述硅衬底的表面下方的集电极区域,所述集电极区域夹在所述浅沟槽场氧化物之间和所述伪埋层之间; 形成在每个浅沟槽场氧化物上方的多晶硅栅极,其厚度大于150nm; 多晶硅栅极和集电极区域上的基极区域; 发射极区隔离氧化物; 并且发射极区域上的发射极区域隔离氧化物和基极区域的一部分。 多晶硅栅极通过CMOS工艺中的MOSFET的栅极多晶硅工艺形成。 还公开了制造SiGe HBT的方法。
    • 7. 发明申请
    • METHOD AND DEVICE FOR CONTROLLING INFORMATION CHANNEL FLOW
    • 用于控制信息通道流的方法和装置
    • US20120099431A1
    • 2012-04-26
    • US13274653
    • 2011-10-17
    • Zhongming HOUJun Hu
    • Zhongming HOUJun Hu
    • H04L12/26
    • H04L47/266H04L47/30H04L69/14Y02D50/30
    • A method for controlling information channel flow is provided according to the present invention, and includes: receiving information from multiple information channels of a data sending device, where the multiple information channels are divided into at least two channel groups, and a group number is set for the at least two channel groups respectively; determining an information channel requiring flow adjustment in the multiple information channels, and obtaining a group number of a channel group including the information channel requiring flow adjustment; generating flow operation information; and sending the flow operation information to the data sending device.
    • 根据本发明提供一种用于控制信息信道流的方法,包括:从数据发送设备的多个信息信道接收信息,其中将多个信息信道划分为至少两个信道组,并且设置组号 分别用于至少两个信道组; 确定需要在多个信息信道中进行流量调整的信息信道,以及获得包括需要流量调整的信息信道的信道组的组号; 产生流动操作信息; 并将流程操作信息发送到数据发送装置。
    • 9. 发明授权
    • 7-ethynyl-2,4,9-trithiaadamantane and related methods
    • 7-乙炔基-2,4,9-三硫杂金刚烷及相关方法
    • US08066914B2
    • 2011-11-29
    • US12262871
    • 2008-10-31
    • Jun Hu
    • Jun Hu
    • H01B1/10H01L29/04H01L29/12
    • C07F1/005C07D495/14H01B1/125H01B1/128
    • 7-ethynyl-2,4,9-trithiaadamantane and related methods are presented. Manufacturing 7-ethynyl-2,4,9-trithiaadamantane includes the steps of: (1) reducing alkyl 2,4,9-trithiaadamantane-7-carboxylate to produce 7-hydroxymethyl-2,4,9-trithiaadamantane; (2) oxidizing 7-hydroxymethyl-2,4,9-trithiaadamantane to produces 7-carbonyl-2,4,9-trithiaadamantane; and (3) reacting 7-carbonyl-2,4,9-trithiaadamantane with Ohira-Bestmann reagent to produces 7-ethynyl-2,4,9-trithiaadamantane. Molecular wires having 2,4,9-trithiaadamantane surface anchors are also disclosed.
    • 提出了7-乙炔基-2,4,9-三硫杂金刚烷及相关方法。 制备7-乙炔基-2,4,9-三噻二聚金刚烷包括以下步骤:(1)还原2,4,9-三硫代金刚烷-7-羧酸烷基酯以产生7-羟甲基-2,4,9-三硫杂环丁烷; (2)氧化7-羟甲基-2,4,9-三硫杂多金刚烷以产生7-羰基-2,4,9-三硫杂金刚烷; 和(3)使7-羰基-2,4,9-三硫杂金刚烷与Ohira-Bestmann试剂反应以产生7-乙炔基-2,4,9-三硫代金刚烷。 还公开了具有2,4,9-三硫杂金刚烷表面锚的分子线。
    • 10. 发明授权
    • Power conversion architecture with zero common mode voltage
    • 具有零共模电压的电源转换架构
    • US07952896B2
    • 2011-05-31
    • US12229124
    • 2008-08-20
    • Jun HuVietson M. NguyenWaleed M. Said
    • Jun HuVietson M. NguyenWaleed M. Said
    • H02M5/452H02M1/12
    • H02M5/4585H02M7/487H02M2001/123H02M2007/53876Y10T307/406
    • A controller for a power conversion system reduces common-mode voltage generated by the power conversion system by imposing a constraint on the control signals applied to the power conversion system. The power conversion system includes a plurality of switching devices that are responsive to control signals provided by the controller to selectively connect each output of the power conversion system to one of a plurality of inputs. The controller generates control signals based on a desired output of the power conversion system. In addition, the controller imposes a constraint on the control signals to reduce the common-mode voltage. The constraint is defined by assigning an integer value to each input of the power conversion system, and requiring that the selective connection of outputs to inputs must result in a sum of integer values equal to zero.
    • 用于功率转换系统的控制器通过对施加到功率转换系统的控制信号施加约束来降低由电力转换系统产生的共模电压。 电力转换系统包括多个开关装置,其响应于由控制器提供的控制信号,以选择性地将电力转换系统的每个输出连接到多个输入中的一个。 控制器基于电力转换系统的期望输出产生控制信号。 此外,控制器对控制信号施加约束以降低共模电压。 通过为功率转换系统的每个输入分配一个整数值来定义约束,并且要求将输出与输入的选择性连接必须导致等于零的整数值之和。