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1. 发明申请

US20070007622A1 Method of manufacturing a passive integrated matching network for power amplifiers 有权
公开(公告)号：US20070007622A1
公开(公告)日：2007-01-11
申请号：US11179685
申请日：2005-07-11
申请人： Lianjun Liu , Qiang Li , Melvy Miller , Sergio Pacheco
发明人： Lianjun Liu , Qiang Li , Melvy Miller , Sergio Pacheco
IPC分类号： H01L29/00
CPC分类号： H01L25/16 , H01L23/642 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/18 , H01L28/10 , H01L28/40 , H01L2223/6655 , H01L2224/48091 , H01L2224/48137 , H01L2224/48195 , H01L2224/48472 , H01L2224/49175 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03H7/38 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.

2. 发明申请

US20090195324A1 BALUN TRANSFORMER WITH IMPROVED HARMONIC SUPPRESSION 有权
标题翻译： BALUN变压器具有改进的谐波抑制
公开(公告)号：US20090195324A1
公开(公告)日：2009-08-06
申请号：US12025315
申请日：2008-02-04
申请人： Qiang Li , Jonathan K. Abrokwah , Olin L. Hartin , Lianjun Liu
发明人： Qiang Li , Jonathan K. Abrokwah , Olin L. Hartin , Lianjun Liu
IPC分类号： H03H5/00 , H01F7/06
CPC分类号： H01F19/04 , H03H7/1775 , H03H7/42 , H03H2001/0064 , Y10T29/4902
摘要： An electronic assembly includes a substrate (66), a balun transformer (42) formed on the substrate (66) and including a first winding (50) and a second winding (52), each having respective first and second ends, and a reaction circuit component (48) formed on the substrate (66) and electrically coupled to the second winding (52) between the first and second ends thereof. The balun transformer (42) and the reaction circuit component (48) jointly form a harmonically suppressed balun transformer having a fundamental frequency, and the reaction circuit component (48) is tuned such that the harmonically suppressed balun transformer resonates at a selected harmonic of the fundamental frequency.
摘要翻译：电子组件包括衬底（66），形成在衬底（66）上并包括第一绕组（50）和第二绕组（52）的平衡不平衡变压器（42），每个具有相应的第一和第二端，以及反应电路部件（48），形成在所述基板（66）上并且在所述第一和第二端之间电连接到所述第二绕组（52）。平衡 - 不平衡变压器（42）和反应电路部件（48）共同形成具有基频的谐波抑制平衡不平衡变压器，并且调谐反应电路部件（48），使得谐波抑制的平衡不平衡变压器以所选择的谐波谐振基频

3. 发明授权

US07439606B2 Method for manufacturing a passive integrated matching network for power amplifiers 有权
标题翻译：制造功率放大器无源集成匹配网络的方法
公开(公告)号：US07439606B2
公开(公告)日：2008-10-21
申请号：US11830577
申请日：2007-07-30
申请人： Lianjun Liu , Qiang Li , Melvy F. Miller , Sergio P. Pacheco
发明人： Lianjun Liu , Qiang Li , Melvy F. Miller , Sergio P. Pacheco
IPC分类号： H01L29/00
CPC分类号： H01L25/16 , H01L23/642 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/18 , H01L28/10 , H01L28/40 , H01L2223/6655 , H01L2224/48091 , H01L2224/48137 , H01L2224/48195 , H01L2224/48472 , H01L2224/49175 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03H7/38 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.
摘要翻译：阻抗匹配网络集成在第一裸片上并耦合到第二裸片，第一和第二裸片安装在导电背板上。阻抗匹配网络包括桥接在第一和第二管芯之间的第一电感器，耦合到第一电感器并且设置在第一管芯上的第二电感器和设置在第一管芯上的金属 - 绝缘体 - 金属（MIM）电容器。 MIM电容器具有耦合到第二电感器的第一金属层和接地到导电背板的第二金属层。一种用于制造集成阻抗匹配网络的方法包括以下步骤：在管芯上形成电感器，在管芯上形成电容器，将电容器耦合到电感器，将管芯底表面和电容器耦合到导电板上，电感器到另一个电感器，其在管芯和另一个管芯之间桥接。

4. 发明授权

US07276420B2 Method of manufacturing a passive integrated matching network for power amplifiers 有权
标题翻译：制造功率放大器无源集成匹配网络的方法
公开(公告)号：US07276420B2
公开(公告)日：2007-10-02
申请号：US11179685
申请日：2005-07-11
申请人： Lianjun Liu , Qiang Li , Melvy F. Miller , Sergio P. Pacheco
发明人： Lianjun Liu , Qiang Li , Melvy F. Miller , Sergio P. Pacheco
IPC分类号： H01L21/338 , H01L21/337 , H01L21/8222 , H01L21/20
CPC分类号： H01L25/16 , H01L23/642 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/18 , H01L28/10 , H01L28/40 , H01L2223/6655 , H01L2224/48091 , H01L2224/48137 , H01L2224/48195 , H01L2224/48472 , H01L2224/49175 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03H7/38 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.
摘要翻译：阻抗匹配网络集成在第一裸片上并耦合到第二裸片，第一和第二裸片安装在导电背板上。阻抗匹配网络包括桥接在第一和第二管芯之间的第一电感器，耦合到第一电感器并且设置在第一管芯上的第二电感器和设置在第一管芯上的金属 - 绝缘体 - 金属（MIM）电容器。 MIM电容器具有耦合到第二电感器的第一金属层和接地到导电背板的第二金属层。一种用于制造集成阻抗匹配网络的方法包括以下步骤：在管芯上形成电感器，在管芯上形成电容器，将电容器耦合到电感器，将管芯底表面和电容器耦合到导电板上，电感器到另一个电感器，其在管芯和另一个管芯之间桥接。

5. 发明授权

US07961063B2 Balun signal transformer and method of forming 有权
标题翻译：平衡变压器信号变压器及其成型方法
公开(公告)号：US07961063B2
公开(公告)日：2011-06-14
申请号：US12183755
申请日：2008-07-31
申请人： Lianjun Liu , Jonathan K. Abrokwah , Olin L. Hartin , Qiang Li
发明人： Lianjun Liu , Jonathan K. Abrokwah , Olin L. Hartin , Qiang Li
IPC分类号： H03H7/42 , H01P5/12
CPC分类号： H03H7/42 , H01F19/08 , H01F2017/0046 , H03H7/1758 , H03H7/1766 , H03H7/1775
摘要： A balanced-unbalanced (balun) signal transformer includes an unbalanced port, a balanced port coupled to the unbalanced port, the balanced port comprising a first terminal and a second terminal, a first capacitor coupled to the first terminal, a first inductor coupled to ground and the first capacitor, a second capacitor coupled to the second terminal, and a second inductor coupled to ground and the second capacitor. The transformer may also include a third capacitor coupled to a terminal of the unbalanced port; and a third inductor coupled to the third capacitor and the third terminal.
摘要翻译：平衡不平衡（balun）信号变压器包括不平衡端口，耦合到不平衡端口的平衡端口，平衡端口包括第一端子和第二端子，耦合到第一端子的第一电容器，耦合到地的第一电感器并且第一电容器，耦合到第二端子的第二电容器和耦合到地的第二电感器和第二电容器。变压器还可以包括耦合到不平衡端口的端子的第三电容器; 以及耦合到所述第三电容器和所述第三端子的第三电感器。

6. 发明申请

US20080036035A1 METHOD FOR MANUFACTURING A PASSIVE INTEGRATED MATCHING NETWORK FOR POWER AMPLIFIERS 有权
标题翻译：用于功率放大器的被动集成匹配网络的制造方法
公开(公告)号：US20080036035A1
公开(公告)日：2008-02-14
申请号：US11830577
申请日：2007-07-30
申请人： Lianjun Liu , Qiang Li , Melvy Miller , Sergio Pacheco
发明人： Lianjun Liu , Qiang Li , Melvy Miller , Sergio Pacheco
IPC分类号： H01L29/00
CPC分类号： H01L25/16 , H01L23/642 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/18 , H01L28/10 , H01L28/40 , H01L2223/6655 , H01L2224/48091 , H01L2224/48137 , H01L2224/48195 , H01L2224/48472 , H01L2224/49175 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03H7/38 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.
摘要翻译：阻抗匹配网络集成在第一裸片上并耦合到第二裸片，第一和第二裸片安装在导电背板上。阻抗匹配网络包括桥接在第一和第二管芯之间的第一电感器，耦合到第一电感器并且设置在第一管芯上的第二电感器和设置在第一管芯上的金属 - 绝缘体 - 金属（MIM）电容器。 MIM电容器具有耦合到第二电感器的第一金属层和接地到导电背板的第二金属层。一种用于制造集成阻抗匹配网络的方法包括以下步骤：在管芯上形成电感器，在管芯上形成电容器，将电容器耦合到电感器，将管芯底表面和电容器耦合到导电板上，电感器到另一个电感器，其在管芯和另一个管芯之间桥接。

7. 发明授权

US07683733B2 Balun transformer with improved harmonic suppression 有权
标题翻译：平衡变压器具有改进的谐波抑制
公开(公告)号：US07683733B2
公开(公告)日：2010-03-23
申请号：US12025315
申请日：2008-02-04
申请人： Qiang Li , Jonathan K. Abrokwah , Olin L. Hartin , Lianjun Liu
发明人： Qiang Li , Jonathan K. Abrokwah , Olin L. Hartin , Lianjun Liu
IPC分类号： H03H7/42 , H01P5/00
CPC分类号： H01F19/04 , H03H7/1775 , H03H7/42 , H03H2001/0064 , Y10T29/4902
摘要： An electronic assembly includes a substrate (66), a balun transformer (42) formed on the substrate (66) and including a first winding (50) and a second winding (52), each having respective first and second ends, and a reaction circuit component (48) formed on the substrate (66) and electrically coupled to the second winding (52) between the first and second ends thereof. The balun transformer (42) and the reaction circuit component (48) jointly form a harmonically suppressed balun transformer having a fundamental frequency, and the reaction circuit component (48) is tuned such that the harmonically suppressed balun transformer resonates at a selected harmonic of the fundamental frequency.
摘要翻译：电子组件包括衬底（66），形成在衬底（66）上并包括第一绕组（50）和第二绕组（52）的平衡不平衡变压器（42），每个具有相应的第一和第二端，以及反应电路部件（48），形成在所述基板（66）上并且在所述第一和第二端之间电连接到所述第二绕组（52）。平衡 - 不平衡变压器（42）和反应电路部件（48）共同形成具有基频的谐波抑制平衡不平衡变压器，并且调谐反应电路部件（48），使得谐波抑制的平衡不平衡变压器以所选择的谐波谐振基频

8. 发明申请

US20080258837A1 BALUN SIGNAL TRANSFORMER 审中-公开
标题翻译： BALUN信号变压器
公开(公告)号：US20080258837A1
公开(公告)日：2008-10-23
申请号：US11737270
申请日：2007-04-19
申请人： Lianjun Liu , Qiang Li
发明人： Lianjun Liu , Qiang Li
IPC分类号： H03H7/42
CPC分类号： H03H7/42 , H03H7/1775 , H03H2001/0078
摘要： A system 20 includes an unbalanced device 22, a balanced device 24, and a balun (balanced-unbalanced) signal transformer 26 interposed between devices 22 and 24. The balun signal transformer 26 includes a balanced external port section 32 formed by ports 40 and 42. The balun signal transformer 26 includes a symmetric transformer 48 having a balanced port 50 formed by terminals 52 and 54. Terminal 52 is electrically interconnected with port 40, and an inductor 64 is interposed between terminal 54 and port 42. The inductor 64 shifts a phase of a signal component 72 at terminal 54 to balance substantially one hundred eighty degrees out-of-phase with a signal component 70 at terminal 52.
摘要翻译：系统20包括不平衡装置22，平衡装置24和插入在装置22和24之间的平衡 - 不平衡转换器（平衡 - 不平衡）信号变压器26.平衡不平衡变换器信号变压器26包括由端口40和42形成的平衡外部端口部分32 平衡不平衡变压器信号变压器26包括具有由端子52和54形成的平衡端口50的对称变压器48.端子52与端口40电互连，并且电感器64插入在端子54和端口42之间。电感器64移位在端子54处的信号部件72的相位相平衡，以平衡与端子52处的信号部件70基本上相差180度的异相。

9. 发明授权

US09343242B2 Method of making contact posts for a microelectromechanical device 有权
标题翻译：制造微机电装置接触柱的方法
公开(公告)号：US09343242B2
公开(公告)日：2016-05-17
申请号：US11767413
申请日：2007-06-22
申请人： Lianjun Liu
发明人： Lianjun Liu
IPC分类号： H01H1/00 , B81C1/00 , H01H1/06 , H01H1/20 , H01H11/04
CPC分类号： H01H1/0036 , B81B2201/016 , B81C1/00103 , H01H1/06 , H01H1/20 , H01H11/04 , Y10T29/49105 , Y10T29/49174
摘要： A device 20 includes a substrate 22 coupled with a substrate 24 such that a volume 32 is formed between the substrates 22, 24. Contact posts 48, 50 on the substrate 22 and a cantilever beam structure 36 on the substrate 24 are located within the volume 32. The cantilever beam structure has a conductive trace 38 that is selectively contactable with the contact posts 48, 50 to yield a microelectromechanical (MEMS) switch within the volume 32. Fabrication methodology for making the contact posts 48, 50 entails forming post protrusions 68, 70 on the substrate 22 and shaping post protrusions 68, 70 so that they acquire a rounded shape. Input and output signal lines 42, 44 are constructed such that respective portions of input and output signal lines 42, 44 overly corresponding post protrusions 68, 70 and take on the shape of post protrusions 68, 70.
摘要翻译：器件20包括与衬底24耦合的衬底22，使得在衬底22,24之间形成体积32.衬底22上的接触柱48,50和衬底24上的悬臂梁结构36位于体积悬臂梁结构具有能够与接触柱48,50选择性地接触的导电迹线38，以在体积32内产生微机电（MEMS）开关。用于制造接触柱48,50的制造方法需要形成后突起68 ，70在基板22上，并且成形柱突起68,70，使得它们获得圆形。输入和输出信号线42,44被构造成使得输入和输出信号线42,44的相应部分过度对应的柱形突起68,70并且呈立柱形突起68,70的形状。

10. 发明申请

US20140048910A1 SUBSTRATE STRUCTURE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：基板结构及其制造方法
公开(公告)号：US20140048910A1
公开(公告)日：2014-02-20
申请号：US14111093
申请日：2012-02-23
申请人： Lianjun Liu
发明人： Lianjun Liu
IPC分类号： H01L23/00 , H01L23/522 , H01L21/30 , H01L23/528
CPC分类号： H01L23/562 , B81C1/00182 , B81C1/00365 , B81C2201/019 , H01L21/30 , H01L21/76283 , H01L21/76898 , H01L21/84 , H01L23/5226 , H01L23/528 , H01L23/544 , H01L25/50 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： Provided is a substrate structure, including: a first substrate and a second substrate arranged correspondingly. A first surface of the first substrate faces a second surface of the second substrate, wherein the first surface is successively arranged with a conductor interconnection layer and a bonding layer, with the bonding layer connecting the first substrate and the conductor interconnection layer to the second substrate. The substrate structure and a method for manufacturing the same. The second substrate can serve as a support substrate and the first substrate as a substrate for directly manufacturing a device. However, the first substrate is formed by the growth of a crystal without the problem of thickness and stress thereof, thereby avoiding unnecessary stress and further improving the performance of the device formed in the first substrate.
摘要翻译：提供了一种基板结构，包括：相应地布置的第一基板和第二基板。第一衬底的第一表面面对第二衬底的第二表面，其中第一表面依次布置有导体互连层和接合层，其中接合层将第一衬底和导体互连层连接到第二衬底。基板结构及其制造方法。第二基板可以用作支撑基板，第一基板用作用于直接制造装置的基板。然而，第一衬底通过晶体生长而形成，而没有其厚度和应力的问题，从而避免了不必要的应力，并进一步提高了形成在第一衬底中的器件的性能。

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