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1. 发明授权

US5453325A Nonlinear optical waveguide multilayer structure 失效
标题翻译：非线性光波导多层结构
公开(公告)号：US5453325A
公开(公告)日：1995-09-26
申请号：US164244
申请日：1993-12-09
申请人： Liang-Sun Hung , John A. Agostinelli , Jose M. Mir , Dilip K. Chatterjee
发明人： Liang-Sun Hung , John A. Agostinelli , Jose M. Mir , Dilip K. Chatterjee
IPC分类号： G02B6/132 , G02F1/035 , G02F1/355 , B32B15/04
CPC分类号： G02F1/035 , G02B6/132 , G02F1/3558 , Y10S428/913
摘要： A multilayer structure has an a nonlinear optical film epitaxially grown on an underlying buffer layer of substantially lower refractive index. The buffer layer itself is epitaxially grown on a single crystal substrate with an intermediate epitaxial electrode.
摘要翻译：多层结构具有在基本上较低折射率的下面缓冲层上外延生长的非线性光学膜。缓冲层本身在具有中间外延电极的单晶衬底上外延生长。

2. 发明授权

US5363462A Multilayer waveguide using a nonlinear LiN.sub.b Ta.sub.1-x O.sub.3 optical film 失效
标题翻译：多层波导使用非线性LiNbTa1-xO3光学膜
公开(公告)号：US5363462A
公开(公告)日：1994-11-08
申请号：US85361
申请日：1993-07-02
申请人： Liang-Sun Hung , Jose M. Mir , John A. Agostinelli
发明人： Liang-Sun Hung , Jose M. Mir , John A. Agostinelli
IPC分类号： G02B6/13 , G02F1/355 , G02F1/377 , G02B6/10 , G02F2/02
CPC分类号： G02F1/3551 , G02B6/13 , G02F1/377
摘要： A multilayer waveguide having an optical film of LiN.sub.b Ta.sub.1-x O.sub.3 formed on the surface of a buffer layer or substrate of material having a nearly identical lattice structure and substantially low refractive index.
摘要翻译：在具有几乎相同的晶格结构和基本上低折射率的材料的缓冲层或材料的表面上形成具有LiNbTa 1-x O 3的光学膜的多层波导。

3. 发明授权

US5347157A Multilayer structure having a (111)-oriented buffer layer 失效
标题翻译：具有（111）取向缓冲层的多层结构
公开(公告)号：US5347157A
公开(公告)日：1994-09-13
申请号：US992213
申请日：1992-12-17
申请人： Liang-Sun Hung , John A. Agostinelli , Jose M. Mir
发明人： Liang-Sun Hung , John A. Agostinelli , Jose M. Mir
IPC分类号： G02B6/12 , C30B23/02 , C30B29/16 , G02B6/13 , G02F1/37 , H01L21/28 , H01L29/43 , H01S5/00 , H01L29/04 , H01L29/161
CPC分类号： G02F1/37 , C30B23/02 , C30B29/68 , G02B6/131
摘要： A multilayer structure comprising in order: a (111)-oriented single crystal substrate and an epitaxial metal oxide buffer layer. The substrate is doped or undoped. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb. The substrate defines a substrate superlattice dimension equal to 3 times a sublattice constant of the substrate. The epitaxial metal oxide buffer layer has a three-fold rotation symmetry about the substrate (111) direction. The buffer layer defines a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of the buffer layer. The buffer layer superlattice dimension is within 15 percent of the substrate superlattice dimension.
摘要翻译：一种多层结构，其顺序包括：（111）取向的单晶衬底和外延金属氧化物缓冲层。衬底是掺杂或未掺杂的。衬底是选自Si化合物，Ge化合物和具有选自Al，Ga和In中的至少一种元素的化合物的半导体，以及选自N，P ，As和Sb。衬底限定了等于衬底的次晶格常数的3倍的衬底超晶格尺寸。外延金属氧化物缓冲层围绕基板（111）方向具有三重旋转对称性。缓冲层限定了等于缓冲层的氧 - 氧晶格间距的4倍的缓冲层超晶格尺寸。缓冲层超晶格尺寸在衬底超晶格尺寸的15％以内。

4. 发明授权

US4994434A Method of forming a barrier layer arrangement for conductive layers on silicon substrates 失效
标题翻译：在硅衬底上形成用于导电层的阻挡层布置的方法
公开(公告)号：US4994434A
公开(公告)日：1991-02-19
申请号：US326813
申请日：1989-03-21
申请人： Liang-Sun Hung , John A. Agostinelli
发明人： Liang-Sun Hung , John A. Agostinelli
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/73 , Y10S505/739 , Y10S505/817 , Y10S505/818 , Y10S505/826 , Y10S505/832 , Y10S505/92
摘要： A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.
摘要翻译：公开了一种在晶体硅衬底上制备能够保护稀土类碱土铜氧化物导电涂层与衬底直接相互作用的阻挡层三元组的方法。将厚度至少为2000的二氧化硅层沉积在硅衬底上，随后沉积在第4组重金属的二氧化硅层上，以形成厚度在1500至3000范围内的层。在没有反应气氛的情况下加热层以允许氧从二氧化硅层迁移形成由位于硅衬底附近的二氧化硅第一三元组构成的阻挡层三元组，远离硅衬底的重的第4族金属氧化物第三三电极层以及插入在第一和第三三单层之间的第4族重金属硅化物第二三单元组层。

5. 发明授权

US4950643A Metalorganic deposition process for preparing heavy pnictide superconducting oxide films 失效
标题翻译：用于制备重型超导氧化物膜的金属有机沉积工艺
公开(公告)号：US4950643A
公开(公告)日：1990-08-21
申请号：US359306
申请日：1989-05-31
申请人： John A. Agostinelli , Gustavo R. Paz-Pujalt , Arun K. Mehrotra , Liang-Sun Hung
发明人： John A. Agostinelli , Gustavo R. Paz-Pujalt , Arun K. Mehrotra , Liang-Sun Hung
IPC分类号： B32B18/00 , C04B35/45 , C30B13/00 , H01L39/12 , H01L39/24
CPC分类号： C30B29/225 , C04B35/4521 , C30B13/00 , H01L39/126 , H01L39/2425 , H01L39/2454 , H01L39/2458 , H01L39/2464 , Y10S505/725 , Y10S505/734
摘要： A metalorganic deposition method is disclosed for manufacturing a heavy pnictide superconducting oxide film on a substrate, in which a mixed metalorganic precursor is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then converted to a crystalline coating by further heating followed by cooling in the presence of oxygen.
摘要翻译：公开了一种金属有机沉积方法，用于在衬底上制造重的pnictide超导氧化物膜，其中将混合的金属有机前体涂覆并加热至其热分解温度以产生无定形混合金属氧化物层。然后通过进一步加热然后在氧气存在下冷却将非晶层转化为结晶涂层。

6. 发明授权

US4908348A Barrier layer arrangement for conductive layers on silicon substrates 失效
标题翻译：阻挡层布置用于硅衬底上的导电层
公开(公告)号：US4908348A
公开(公告)日：1990-03-13
申请号：US153699
申请日：1988-02-08
申请人： Liang-Sun Hung , John A. Agostinelli
发明人： Liang-Sun Hung , John A. Agostinelli
IPC分类号： H01L39/06 , H01B12/06 , H01B13/00 , H01L21/3205 , H01L23/52 , H01L39/24
CPC分类号： H01L39/2461 , Y10S428/901 , Y10S505/701 , Y10S505/702 , Y10S505/704 , Y10T428/24917 , Y10T428/26 , Y10T428/261 , Y10T428/263 , Y10T428/273 , Y10T428/31678
摘要： A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.

7. 发明授权

US06208075B1 Conductive fluorocarbon polymer and method of making same 有权
标题翻译：导电氟碳聚合物及其制备方法
公开(公告)号：US06208075B1
公开(公告)日：2001-03-27
申请号：US09186829
申请日：1998-11-05
申请人： Liang-Sun Hung , Longru Zheng , Joseph K. Madathil
发明人： Liang-Sun Hung , Longru Zheng , Joseph K. Madathil
IPC分类号： H01J162
CPC分类号： H01L51/5056 , B05D1/62 , C08F2/52 , H01B1/12 , H01L21/3127 , H01L51/0059 , H01L51/5012
摘要： A fluorocarbon based conductive polymer and method of making such polymer are disclosed. The conductive polymer is advantageously used in electroluminescent devices.
摘要翻译：公开了一种氟碳系导电聚合物及其制造方法。导电聚合物有利地用于电致发光器件中。

8. 发明授权

US5492776A Highly oriented metal fluoride thin film waveguide articles on a substrate 失效
标题翻译：基板上的高取向金属氟化物薄膜波导制品
公开(公告)号：US5492776A
公开(公告)日：1996-02-20
申请号：US186415
申请日：1994-01-25
申请人： Gustavo R. Paz-Pujalt , Liang-Sun Hung , James M. Chwalek , Anna L. Hrycin , Dilip K. Chatterjee , Duncan A. Richards
发明人： Gustavo R. Paz-Pujalt , Liang-Sun Hung , James M. Chwalek , Anna L. Hrycin , Dilip K. Chatterjee , Duncan A. Richards
IPC分类号： C01F17/00 , C09K11/85 , C30B23/02 , G02B6/10 , G02F2/02 , H01S3/06 , H01S3/063 , H01S3/07 , H01S3/094 , H01S3/16 , H01S3/17 , B32B5/16
CPC分类号： G02F2/02 , C30B23/02 , C30B29/12 , G02B6/102 , H01S3/063 , H01S3/094092 , H01S3/1603 , Y10S428/913
摘要： A highly oriented thin film of specific barium fluoride materials deposited at low temperatures are useful as Upconversion waveguides.
摘要翻译：在低温下沉积的特定氟化钡材料的高取向薄膜可用作上转换波导。

9. 发明授权

US5086035A Electrically conductive article (I) 失效
标题翻译：电导体文章（一）
公开(公告)号：US5086035A
公开(公告)日：1992-02-04
申请号：US475527
申请日：1990-02-06
申请人： Liang-Sun Hung , Dilip K. Chatterjee
发明人： Liang-Sun Hung , Dilip K. Chatterjee
IPC分类号： C01G1/00 , C01G29/00 , C22C38/00 , C22C38/40 , C30B29/22 , H01B12/00 , H01B13/00 , H01L39/24
CPC分类号： H01L39/2461 , Y10S428/901 , Y10T428/29 , Y10T428/31678
摘要： An electrically conductive article is disclosed comprised of a support, a barrier and a heavy pnictide mixed alkaline earth copper oxide crystalline coating. The support is an austenitic metal alloy of chromium and one or more group VIII period 4 metals, and the barrier is comprised of a high density hafnia layer.

10. 发明授权

US07037600B2 Red-emitting organic electroluminescent elements 失效
标题翻译：红色发光有机电致发光元件
公开(公告)号：US07037600B2
公开(公告)日：2006-05-02
申请号：US10391265
申请日：2003-03-18
申请人： Shuit-Tong Lee , Chun-Sing Lee , Liang-Sun Hung , Baoxiu Mi , Zhi-Qiang Gao
发明人： Shuit-Tong Lee , Chun-Sing Lee , Liang-Sun Hung , Baoxiu Mi , Zhi-Qiang Gao
IPC分类号： H05B33/14 , C09K11/08
CPC分类号： C09K11/06 , C07C15/20 , C07C25/22 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , H01L51/0056 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/0081 , H05B33/14 , Y10S428/917
摘要： Compounds of formula [I] wherein each R1 to R8 is independently selected from the group consisting of halogen atoms, cyano, isocyano, mercapto, amino, carbonyl, carboxy, sulfone, nitro and hydroxy groups, and optionally substituted alkyl, alkenyl, alkynyl, haloalkyl, hydroxyalkyl, aryl, alkoxy, aryloxy, alkylamino, arylamino, alkylarylamino, amide, alkylthio, arylthio, alkoxy carbonyl, siloxy, cyclic hydrocarbon or heterocyclic groups; each x is independently zero, one, two or three; each y is independently zero or one; and each z is independently zero, one, two or three are useful in organic electroluminescence devices. Such compounds are disclosed herein, as well as organic electroluminescence devices using the compounds in the emissive layer.
摘要翻译：其中每个R 1至R 8的式[I]化合物独立地选自卤素原子，氰基，异氰基，巯基，氨基，羰基，羧基，砜，硝基和羟基，以及任选取代的烷基，烯基，炔基，卤代烷基，羟基烷基，芳基，烷氧基，芳氧基，烷基氨基，芳基氨基，烷基芳基氨基，酰胺，烷硫基，芳硫基，烷氧基羰基，甲硅烷氧基，环状烃或杂环基。每个x独立为零，一，二或三; 每个y独立为零或一个; 并且每个z独立地为零，一个，二个或三个在有机电致发光器件中是有用的。这些化合物在本文中公开，以及在发光层中使用化合物的有机电致发光器件。

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