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    • 6. 发明授权
    • Thin film transistor
    • 薄膜晶体管
    • US07812344B2
    • 2010-10-12
    • US12372700
    • 2009-02-17
    • Jing-Yi YanLiang-Hsiang Chen
    • Jing-Yi YanLiang-Hsiang Chen
    • H01L51/00
    • H01L29/4908H01L29/6675H01L29/7869H01L51/0545
    • A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.
    • 提供薄膜晶体管。 薄膜晶体管包括栅极,至少一个无机材料层,至少一个电介质层,源极,漏极和有源层。 栅极设置在基板上。 无机材料层覆盖门。 包括至少一种有机材料的电介质层覆盖基板,并且具有露出栅极上的无机材料层的开口。 源极和漏极分别设置在电介质层上,并且部分无机层分别由开口露出。 在源极和漏极之间存在沟道区。 有源层设置在沟道区上。
    • 9. 发明申请
    • THIN FILM TRANSISTOR
    • 薄膜晶体管
    • US20100127270A1
    • 2010-05-27
    • US12372700
    • 2009-02-17
    • Jing-Yi YanLiang-Hsiang Chen
    • Jing-Yi YanLiang-Hsiang Chen
    • H01L29/786
    • H01L29/4908H01L29/6675H01L29/7869H01L51/0545
    • A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.
    • 提供薄膜晶体管。 薄膜晶体管包括栅极,至少一个无机材料层,至少一个电介质层,源极,漏极和有源层。 栅极设置在基板上。 无机材料层覆盖门。 包括至少一种有机材料的电介质层覆盖基板,并且具有露出栅极上的无机材料层的开口。 源极和漏极分别设置在电介质层上,并且部分无机层分别由开口露出。 在源极和漏极之间存在沟道区。 有源层设置在沟道区上。