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1. 发明申请

US20120231578A1 FABRICATING METHOD OF ORGANIC THIN FILM TRANSISTOR HAVING A HYDROPHOBIC LAYER 审中-公开
标题翻译：具有疏水层的有机薄膜晶体管的制造方法
公开(公告)号：US20120231578A1
公开(公告)日：2012-09-13
申请号：US13479285
申请日：2012-05-24
申请人： Liang-Hsiang Chen , Ko-Pin Liao , Jia-Chong Ho
发明人： Liang-Hsiang Chen , Ko-Pin Liao , Jia-Chong Ho
IPC分类号： H01L51/40
CPC分类号： H01L51/0003 , H01L51/0545
摘要： A fabricating method of an organic thin film transistor having a hydrophobic layer is provided. The organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof.
摘要翻译：提供了具有疏水层的有机薄膜晶体管的制造方法。有机薄膜晶体管包括栅极，覆盖栅极的栅极绝缘体，源极，漏极，有机半导体层，疏水层和保护液滴。通过在源极的表面和漏极的表面上分别形成疏水层来形成疏水区域。同时，在由疏水层暴露的有机半导体层上形成亲水区域。在有机半导体层上自组装保护液滴，通过使用其表面张力来保护装置的特性。

2. 发明申请

US20100200844A1 ORGANIC THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：有机薄膜晶体管及其制作方法
公开(公告)号：US20100200844A1
公开(公告)日：2010-08-12
申请号：US12699827
申请日：2010-02-03
申请人： Liang-Hsiang Chen , Ko-Pin Liao , Jia-Chong Ho
发明人： Liang-Hsiang Chen , Ko-Pin Liao , Jia-Chong Ho
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0003 , H01L51/0545
摘要： An organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet is provided. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof. Therefore, an organic thin film transistor having a simple fabricating process is provided. Besides, a fabricating method of an organic thin film transistor is also provided.
摘要翻译：提供了包括栅极，覆盖栅极的栅绝缘体，源极，漏极，有机半导体层，疏水层和保护液滴的有机薄膜晶体管。通过在源极的表面和漏极的表面上分别形成疏水层来形成疏水区域。同时，在由疏水层暴露的有机半导体层上形成亲水区域。在有机半导体层上自组装保护液滴，通过使用其表面张力来保护装置的特性。因此，提供了具有简单制造工艺的有机薄膜晶体管。此外，还提供了有机薄膜晶体管的制造方法。

3. 发明授权

US07919917B2 Reflective liquid crystal display, top-emitting OLED display and fabrication method thereof 有权
标题翻译：反射型液晶显示器，顶部发光OLED显示器及其制造方法
公开(公告)号：US07919917B2
公开(公告)日：2011-04-05
申请号：US12358098
申请日：2009-01-22
申请人： Liang-Hsiang Chen , Jing-Yi Yan , Jia-Chong Ho
发明人： Liang-Hsiang Chen , Jing-Yi Yan , Jia-Chong Ho
IPC分类号： H01J1/62
CPC分类号： H01L51/56 , G02F1/133305 , G02F1/133553 , H01L51/52 , H01L2227/323 , H01L2227/326 , H01L2251/5315 , H01L2251/5338
摘要： A top-emitting OLED display and fabrication method thereof are provided. The top-emitting OLED display includes providing a handling substrate. A composite layer is formed on the handling substrate. An organic light emitting unit is formed on the composite layer. A top electrode is formed on the organic light emitting unit. A reflective type display and fabrication method thereof are provided. The reflective type display includes providing a handling substrate. A composite layer is formed on the handling substrate, a thin film transistor array is formed on the composite layer.
摘要翻译：提供了顶部发光OLED显示器及其制造方法。顶部发射OLED显示器包括提供处理基板。在处理基板上形成复合层。在复合层上形成有机发光单元。顶部电极形成在有机发光单元上。提供了一种反射型显示及其制造方法。反射型显示器包括提供处理基板。在处理基板上形成复合层，在复合层上形成薄膜晶体管阵列。

4. 发明授权

US07741163B2 Method of fabricating thin film transistor and organic electro-luminescent display device 有权
标题翻译：制造薄膜晶体管和有机电致发光显示装置的方法
公开(公告)号：US07741163B2
公开(公告)日：2010-06-22
申请号：US11309735
申请日：2006-09-19
申请人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
发明人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
IPC分类号： H01L21/00
CPC分类号： H01L27/3262 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2227/323 , Y10T428/24802
摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘体以覆盖栅极。源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。在源极/漏极层上形成隔离层，并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。

5. 发明申请

US20090271981A1 METHOD OF FABRICATING A DEVICE WITH FLEXIBLE SUBSTRATE AND METHOD FOR STRIPPING FLEXIBLE-SUBSTRATE 有权
标题翻译：用柔性基板制造器件的方法和用于剥离柔性衬底的方法
公开(公告)号：US20090271981A1
公开(公告)日：2009-11-05
申请号：US12497297
申请日：2009-07-02
申请人： TAMG-SHIANG HU , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
发明人： TAMG-SHIANG HU , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
IPC分类号： B21D39/00
CPC分类号： H01L21/2007 , H01L51/0097 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y10T29/4913
摘要： A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.
摘要翻译：用于制造具有柔性衬底的器件的方法包括首先提供刚性衬底。接下来，可以在刚性基板上形成接合层，然后在接合层上直接形成柔性基板。柔性基底完全接触界面层。然后在柔性基板上形成器件结构。

6. 发明申请

US20090075437A1 THIN FILM TRANSISTOR MANUFACTURING METHOD AND SUBSTRATE STRUCTURE 审中-公开
标题翻译：薄膜晶体管制造方法和基板结构
公开(公告)号：US20090075437A1
公开(公告)日：2009-03-19
申请号：US12323834
申请日：2008-11-26
申请人： Liang-Yin Huang , Yi-Kai Wang , Tarng-Shiang Hu , Jia-Chong Ho
发明人： Liang-Yin Huang , Yi-Kai Wang , Tarng-Shiang Hu , Jia-Chong Ho
IPC分类号： H01L21/84
CPC分类号： H01L51/0021 , H01L27/1288 , H01L27/1292 , H01L29/66765 , H01L51/0545 , H01L51/105
摘要： A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.
摘要翻译：提供了TFT（薄膜晶体管）制造方法和基板结构。该结构包括基板和自对准掩模。首先制造衬底上的自对准掩模，然后在热处理期间自对准掩模可以与衬底同步延伸。当在不形成TFT的一侧设置曝光光源时，自对准掩模可以克服当塑料基板延伸时要在塑料基板上形成的源极和漏极的位置不正确的问题，对准准确性有很大的影响。结果，可以精确地定义源极和漏极的位置。

7. 发明授权

US07297576B2 Method for fabricating thin film transistor (TFT) display 有权
标题翻译：制造薄膜晶体管（TFT）显示器的方法
公开(公告)号：US07297576B2
公开(公告)日：2007-11-20
申请号：US11195791
申请日：2005-08-03
申请人： Liang-Yin Huang , Jia-Chong Ho , Cheng-Chung Lee , Chi-Chang Liao
发明人： Liang-Yin Huang , Jia-Chong Ho , Cheng-Chung Lee , Chi-Chang Liao
IPC分类号： H01L21/84
CPC分类号： H01L51/0545 , G02F1/1334 , G02F1/1341 , G02F1/1362 , H01L51/107
摘要： A method for fabricating a thin film transistor (TFT) display is provided, wherein the processes of a liquid crystal substrate and an organic thin film transistor (OTFT) substrate are separated. The fabrication of liquid crystal substrate employs the technology of polymer encapsulated liquid crystal molecule, and leaves the polymeric layer as a substrate using a sacrificial layer, so as to improve the flexibility. And the TFT substrate has a high adhesive polymeric protective layer provided on its surface, so as to combine the fabricated TFT substrate and the liquid crystal substrate by laminating. Thereby, the processes of the liquid crystal substrate and the TFT substrate will not affect each other, to improve the process yield and meet the demand for the variety of products.
摘要翻译：提供一种用于制造薄膜晶体管（TFT）显示器的方法，其中分离液晶衬底和有机薄膜晶体管（OTFT）衬底的工艺。液晶基板的制造采用聚合物封装液晶分子的技术，并使用牺牲层离开聚合物层作为基板，从而提高柔性。并且TFT基板在其表面上具有高粘合性聚合物保护层，以便通过层压将所制造的TFT基板和液晶基板组合在一起。因此，液晶基板和TFT基板的处理不会相互影响，提高工艺成品率并满足各种产品的需求。

8. 发明授权

US07264989B2 Organic thin-film transistor and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07264989B2
公开(公告)日：2007-09-04
申请号：US10840637
申请日：2004-05-07
申请人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
发明人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
IPC分类号： H01L51/40 , H01L21/84
CPC分类号： H01L51/0022 , H01L51/0545 , H01L51/055 , H01L51/0558
摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.
摘要翻译：对有机薄膜晶体管及其制造方法进行说明。该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。在半导体层上丝网印刷电极层，在电极层上涂布钝化层。通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

9. 发明授权

US07211463B2 Process to improve carrier mobility of organic semiconductor 有权
标题翻译：改善有机半导体载流子迁移率的方法
公开(公告)号：US07211463B2
公开(公告)日：2007-05-01
申请号：US10948341
申请日：2004-09-24
申请人： Tarng-Shiang Hu , Jia-Chong Ho , Liang-Ying Huang , Wei-Ling Lin
发明人： Tarng-Shiang Hu , Jia-Chong Ho , Liang-Ying Huang , Wei-Ling Lin
IPC分类号： H01L51/40 , H01L21/84
CPC分类号： H01L51/0533 , H01L51/0545
摘要： The invention related to a process for improving carrier mobility of organic semiconductor, comprising the steps of: forming a gate on a substrate; forming an insulator layer on the substrate and the gate; coating polyimide on the insulator layer to form an interlayer; forming an active layer on the interlayer; and forming a source and a drain.
摘要翻译：本发明涉及一种改善有机半导体载流子迁移率的方法，包括以下步骤：在衬底上形成栅极; 在基板和栅极上形成绝缘体层; 在绝缘体层上涂覆聚酰亚胺以形成中间层; 在中间层上形成活性层; 并形成源极和漏极。

10. 发明申请

US20070054440A1 Method for fabricating a device with flexible substrate and method for stripping flexible-substrate 有权
标题翻译：用于制造具有柔性基板的装置的方法和用于剥离柔性基板的方法
公开(公告)号：US20070054440A1
公开(公告)日：2007-03-08
申请号：US11256399
申请日：2005-10-19
申请人： Tarng-Shiang Hu , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
发明人： Tarng-Shiang Hu , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
IPC分类号： H01L21/8232 , H01L21/335
CPC分类号： H01L21/2007 , H01L51/0097 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y10T29/4913
摘要： A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.
摘要翻译：用于制造具有柔性衬底的器件的方法包括提供刚性衬底。然后，柔性衬底层直接形成在刚性衬底上，其中柔性衬底层完全接触刚性衬底并形成接触界面。在柔性基板层上形成器件结构。或者，可以在刚性衬底上形成界面层，然后在界面层上直接形成柔性衬底层。因此，可以在基本上没有应力的条件下从刚性基板剥离柔性基板层。

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