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    • 1. 发明授权
    • Reference leak
    • 参考泄漏
    • US07353687B2
    • 2008-04-08
    • US11228821
    • 2005-09-16
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • G01F25/00
    • G01M3/007
    • A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
    • 参考泄漏包括由金属材料,玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜,镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。
    • 8. 发明申请
    • Reference leak
    • 参考泄漏
    • US20060144120A1
    • 2006-07-06
    • US11228821
    • 2005-09-16
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • G01F25/00
    • G01M3/007
    • A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
    • 参考泄漏包括由金属材料,玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜,镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。
    • 10. 发明授权
    • Field emitting light source and method for making the same
    • 场发射光源及其制作方法
    • US07728504B2
    • 2010-06-01
    • US11438063
    • 2006-05-18
    • Bing-Chu DuJie TangLiang LiuCai-Lin GuoPi-Jin ChenZhao-Fu HuShou-Shan Fan
    • Bing-Chu DuJie TangLiang LiuCai-Lin GuoPi-Jin ChenZhao-Fu HuShou-Shan Fan
    • H01J17/49
    • H01J63/06B82Y10/00H01J1/304H01J2201/30446H01J2201/30469
    • A CNT field emitting light source (20) is provided. The light source includes an anode (202), an anode substrate (201), a cathode (214), a cathode substrate (208), a fluorescent layer (203) and a sealing means (205). The anode is configured on the anode substrate, and the cathode is configured on the cathode substrate. The anode and the cathode are oppositely configured to produce a spatial electrical field when a voltage is applied therebetween. The cathode includes an emitter layer (206), capable of emitting electrodes bombarding the cathode and matters attached thereupon when activated and controlled by the spatial electric field, and a conductive layer (207), sandwiched between the cathode substrate and the emitter layer for providing an electrically connection therebetween. The fluorescent layer is configured on a surface of the anode oppositely facing the emitter layer, so as to produce fluorescence when bombarded by electrodes emitted from the emitter layer.
    • 提供CNT场发射光源(20)。 光源包括阳极(202),阳极基板(201),阴极(214),阴极基板(208),荧光层(203)和密封装置(205)。 阳极构造在阳极基板上,阴极构造在阴极基板上。 阳极和阴极相反地构造成当在其之间施加电压时产生空间电场。 阴极包括发射极层(206),其能够在由空间电场激活和控制时发射轰击阴极的电极和附着于其上的物质;以及夹在阴极衬底和发射极层之间的导电层(207),用于提供 它们之间的电连接。 荧光层配置在阳极的与发射极层相对的表面上,以便在从发射极层发射的电极轰击时产生荧光。