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    • 1. 发明授权
    • Method for making a highly stable diamond film on a substrate
    • 在基材上制备高度稳定的金刚石膜的方法
    • US07833581B2
    • 2010-11-16
    • US11898112
    • 2007-09-10
    • Liang GuoGuohua Chen
    • Liang GuoGuohua Chen
    • C23C16/00
    • C23C16/0272C02F2001/46147C23C16/27C23C16/272C23C16/278C23C16/279C25B11/0478Y10T428/31678
    • A method of depositing a stable diamond film on a metal substrate includes pretreating a surface of the substrate and depositing a diamond film on the substrate by way of a multi-stage chemical vapor deposition, in which each subsequent stage is performed at progressively higher temperature. The deposited diamond may be doped with boron. The substrate may be titanium, a titanium alloy, iron, an iron alloy, or any other valve metal. The diamond deposition may be a high temperature chemical vapor deposition. The first deposition stage may optionally create a carbide of diamond and substrate, and an optional mixture of diamond and amorphous carbon may be deposited to bond this carbide layer to a subsequently applied layer. The resulting product may be used as an electrode, as a tooth or blade in a cutting tool, or may have many other uses.
    • 在金属基底上沉积稳定的金刚石薄膜的方法包括预处理基片的表面,并通过多级化学气相沉积在基片上沉积金刚石薄膜,其中每个后续阶段都在逐渐升高的温度下进行。 沉积的金刚石可以掺杂硼。 基底可以是钛,钛合金,铁,铁合金或任何其它阀金属。 金刚石沉积可以是高温化学气相沉积。 第一沉积阶段可以任选地产生金刚石和衬底的碳化物,并且可以沉积金刚石和无定形碳的任选混合物以将该碳化物层结合到随后施加的层。 所得到的产品可以用作切割工具中的电极,作为牙齿或刀片,或者可以具有许多其它用途。
    • 2. 发明申请
    • Method for making a highly stable diamond film on a subtrate
    • 制备高度稳定的金刚石薄膜的方法
    • US20080070049A1
    • 2008-03-20
    • US11898112
    • 2007-09-10
    • Liang GuoGuohua Chen
    • Liang GuoGuohua Chen
    • B32B15/04C23C16/00
    • C23C16/0272C02F2001/46147C23C16/27C23C16/272C23C16/278C23C16/279C25B11/0478Y10T428/31678
    • A method of depositing a stable diamond film on a metal substrate includes pretreating a surface of the substrate and depositing a diamond film on the substrate by way of a multi-stage chemical vapor deposition, in which each subsequent stage is performed at progressively higher temperature. The deposited diamond may be doped with boron. The substrate may be titanium, a titanium alloy, iron, an iron alloy, or any other valve metal. The diamond deposition may be a high temperature chemical vapor deposition. The first deposition stage may optionally create a carbide of diamond and substrate, and an optional mixture of diamond and amorphous carbon may be deposited to bond this carbide layer to a subsequently applied layer. The resulting product may be used as an electrode, as a tooth or blade in a cutting tool, or may have many other uses.
    • 在金属基底上沉积稳定的金刚石薄膜的方法包括预处理基片的表面,并通过多级化学气相沉积在基片上沉积金刚石薄膜,其中每个后续阶段都在逐渐升高的温度下进行。 沉积的金刚石可以掺杂硼。 基底可以是钛,钛合金,铁,铁合金或任何其它阀金属。 金刚石沉积可以是高温化学气相沉积。 第一沉积阶段可以任选地产生金刚石和衬底的碳化物,并且可以沉积金刚石和无定形碳的任选混合物以将该碳化物层结合到随后施加的层。 所得到的产品可以用作切割工具中的电极,作为牙齿或刀片,或者可以具有许多其它用途。