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1. 发明授权

US5912210A Enhancement of persistent currents in high TC superconductors 失效
标题翻译：在高TC超导体中增强持续电流
公开(公告)号：US5912210A
公开(公告)日：1999-06-15
申请号：US907435
申请日：1997-08-08
申请人： Lia Krusin-Elbaum , Alan David Marwick , Paul William Lisowski , James Russell Thompson, Jr. , James Francis Ziegler
发明人： Lia Krusin-Elbaum , Alan David Marwick , Paul William Lisowski , James Russell Thompson, Jr. , James Francis Ziegler
IPC分类号： C01G1/00 , H01B13/00 , H01L39/24 , H01L39/12
CPC分类号： H01L39/249 , H01L39/2483
摘要： There is disclosed herein an invention for increasing the current carrying capability of high-Tc superconductor materials. The inventive method includes irradiating such superconductors with light particles, such as neutrons, protons and thermal neutrons, having energy sufficient to cause fission of one or more elements in the superconductor material at a dose rate and for a time sufficient to create highly splayed (dispersed in orientation) extended columns of damaged material therein. These splayed tracks significantly enhance the pinning of magnetic vortices thereby effectively reducing the vortex creep at high temperatures resulting in increased current carrying capability.
摘要翻译：这里公开了用于增加高Tc超导体材料的载流能力的发明。本发明的方法包括用诸如中子，质子和热中子的光粒子照射这种超导体，其具有足够的能量以在剂量速率下引起超导体材料中的一种或多种元素的裂变，并且足以产生高度展开的（分散的在方向上）延伸的受损材料列。这些显示的轨迹显着增强了磁旋涡的钉扎，从而有效地降低了高温下的涡流蠕变，从而提高了载流能力。

2. 发明授权

US08466444B2 Three-terminal cascade switch for controlling static power consumption in integrated circuits 有权
标题翻译：用于控制集成电路静态功耗的三端子级联开关
公开(公告)号：US08466444B2
公开(公告)日：2013-06-18
申请号：US13406096
申请日：2012-02-27
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.
摘要翻译：开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。第一个PCM开关器件的第三端子耦合到一个置位/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到一个相邻的PCM开关器件的第二个端子。

3. 发明申请

US20120270353A1 COUPLING PIEZOELECTRIC MATERIAL GENERATED STRESSES TO DEVICES FORMED IN INTEGRATED CIRCUITS 有权
标题翻译：联合压电材料生成的应力到集成电路中形成的器件
公开(公告)号：US20120270353A1
公开(公告)日：2012-10-25
申请号：US13532991
申请日：2012-06-26
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
IPC分类号： H01L21/02
CPC分类号： H01L49/00 , H01C10/103
摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
摘要翻译：用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

4. 发明授权

US08213224B2 High density low power nanowire phase change material memory device 有权
标题翻译：高密度低功率纳米线相变材料存储器件
公开(公告)号：US08213224B2
公开(公告)日：2012-07-03
申请号：US12624141
申请日：2009-11-23
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Dennis M. Newns , Robert L. Sandstrom
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Dennis M. Newns , Robert L. Sandstrom
IPC分类号： G11C11/00
CPC分类号： H01L45/1233 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L45/06 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1666
摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要翻译：存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结，邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。

5. 发明授权

US07888164B2 Programmable via structure and method of fabricating same 有权
标题翻译：可编程通孔结构及其制造方法
公开(公告)号：US07888164B2
公开(公告)日：2011-02-15
申请号：US12538120
申请日：2009-08-08
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Chung H. Lam , Albert M. Young
IPC分类号： H01L21/02
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A method of fabricating a programmable via structure is provided. The method includes providing a patterned heating material on a surface of an oxide layer. The oxide layer is located above a semiconductor substrate. A patterned dielectric material is formed having a least one via on a surface of the patterned heating material. The at least one via is filled with a phase change material such that a lower surface of the phase change material is in direct contact with a portion of the patterned heating material. A patterned diffusion barrier is formed on an exposed surface of the at least one via filled with the phase change material. A method of programmable a programmable via structure made by the method is also disclosed.
摘要翻译：提供一种制造可编程通孔结构的方法。该方法包括在氧化物层的表面上提供图案化的加热材料。氧化物层位于半导体衬底之上。在图案化加热材料的表面上形成具有至少一个通孔的图案化电介质材料。至少一个通孔填充有相变材料，使得相变材料的下表面与图案化加热材料的一部分直接接触。图案化的扩散阻挡层形成在填充有相变材料的至少一个通孔的暴露表面上。还公开了一种通过该方法制成的可编程通孔结构的方法。

6. 发明申请

US20090321710A1 THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS 有权
标题翻译：用于控制集成电路中静态功耗的三端子开关
公开(公告)号：US20090321710A1
公开(公告)日：2009-12-31
申请号：US12551643
申请日：2009-09-01
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.
摘要翻译：开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。

7. 发明授权

US07633079B2 Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material 有权
标题翻译：使用外部加热相变材料的BEOL区域可编程保险丝/非易失性存储器结构
公开(公告)号：US07633079B2
公开(公告)日：2009-12-15
申请号：US11850742
申请日：2007-09-06
申请人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
发明人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
IPC分类号： H01L47/00
CPC分类号： H01L23/5256 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.
摘要翻译：可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

8. 发明申请

US20090039331A1 PHASE CHANGE MATERIAL STRUCTURES 审中-公开
标题翻译：相变材料结构
公开(公告)号：US20090039331A1
公开(公告)日：2009-02-12
申请号：US11834851
申请日：2007-08-07
申请人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
发明人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
IPC分类号： H01L47/00 , G11C11/00
CPC分类号： G11C17/165 , G11C13/0004 , G11C13/0069 , G11C17/16 , G11C2013/0078 , G11C2013/008 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
摘要翻译：公开了包括相变材料的结构。该结构可以包括第一电极; 第二电极; 电连接第一电极和第二电极以使电流通过的相变材料; 以及围绕所述相变材料的氮化钽加热器层，用于通过向所述相变材料施加第二电流来将所述相变材料转换成非晶态绝缘状态和结晶导电状态。该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

9. 发明申请

US20080285335A1 PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES USING EXTERNALLY HEATED PHASE CHANGE MATERIAL 审中-公开
标题翻译：可编程保险丝/非易失性存储器结构使用外部加热相变材料
公开(公告)号：US20080285335A1
公开(公告)日：2008-11-20
申请号：US12127909
申请日：2008-05-28
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-Kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-Kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
IPC分类号： G11C11/00
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
摘要翻译：可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。

10. 发明授权

US5288456A Compound with room temperature electrical resistivity comparable to that of elemental copper 失效
标题翻译：具有与元素铜相当的室温电阻率的化合物
公开(公告)号：US5288456A
公开(公告)日：1994-02-22
申请号：US021146
申请日：1993-02-23
申请人： Mohamed O. Aboelfotoh , Michael J. Brady , Lia Krusin-Elbaum
发明人： Mohamed O. Aboelfotoh , Michael J. Brady , Lia Krusin-Elbaum
IPC分类号： C22C1/00 , C22C9/00 , C23C14/06
CPC分类号： C22C9/00 , H01L23/53233 , H01L2924/0002
摘要： The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.
摘要翻译：本发明涉及在室温下表现出非常低的电阻率的新型化合物。更具体地，已经发现，将至少1至15原子％的镓和/或至少1至15原子％的金掺入化学计量的锗化锗（Cu 3 Ge）化合物中导致与元素铜相当的室温电阻率，但在高温下暴露于空气或氧气时具有优异的化学和电子稳定性。此外，本发明的化合物没有与铜扩散到元素和化合物半导体中的任何问题，这常常导致半导体器件特性的劣化。另外，本发明涉及一种制备上述前述新颖化合物的方法。

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