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1. 发明授权

US08846535B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08846535B2
公开(公告)日：2014-09-30
申请号：US13315143
申请日：2011-12-08
申请人： Li Jiang , Mingqi Li , Pulei Zhu
发明人： Li Jiang , Mingqi Li , Pulei Zhu
IPC分类号： H01L21/302 , H01L21/461 , H01L21/02 , H01L29/49 , H01L21/321 , H01L21/28
CPC分类号： H01L29/495 , H01L21/02074 , H01L21/02244 , H01L21/28079 , H01L21/3212
摘要： The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminum gates are oxidized with H2O2 solution to form a film of alumina, and the semiconductor device is cleaned.
摘要翻译：本发明公开了半导体器件的制造方法。在通过化学机械平坦化（CMP）工艺除去过量的铝以形成铝门之后，用H 2 O 2溶液氧化铝门的暴露表面以形成氧化铝膜，并清洁半导体器件。

2. 发明授权

US08815728B2 Semiconductor device having metal alloy gate and method for manufacturing the same 有权
标题翻译：具有金属合金栅极的半导体器件及其制造方法
公开(公告)号：US08815728B2
公开(公告)日：2014-08-26
申请号：US13486994
申请日：2012-06-01
申请人： Li Jiang , Mingqi Li , Pulei Zhu
发明人： Li Jiang , Mingqi Li , Pulei Zhu
IPC分类号： H01L21/3205
CPC分类号： H01L29/4966 , H01L21/28088 , H01L29/401 , H01L29/495 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.
摘要翻译：提供半导体器件和制造半导体器件的方法。半导体器件使用铝合金而不是铝合金作为金属栅极。因此，CMP后的高k金属栅极的表面是铝合金而不是纯铝，这可以大大减少金属栅极中的腐蚀，凹坑和损伤等缺陷，提高半导体器件的可靠性。

3. 发明申请

US20120164923A1 POLISHING METHOD 审中-公开
标题翻译：抛光方法
公开(公告)号：US20120164923A1
公开(公告)日：2012-06-28
申请号：US13178968
申请日：2011-07-08
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： B24B1/00
CPC分类号： B24B53/017
摘要： A polishing method is disclosed, which includes: conditioning a polishing pad, after polishing metal material of a previous wafer; spraying organic acid solution to the polishing pad; spraying deionized water to the polishing pad; performing a water-removing treatment on the polishing pad; and spraying polishing liquid to the polishing pad and polishing metal material of a next wafer. The method can prevent scratches on the surface of metal material of wafers and improve yield rate.
摘要翻译：公开了一种抛光方法，其包括：在抛光前一晶片的金属材料之后调节抛光垫; 将有机酸溶液喷洒到抛光垫上; 将去离子水喷在抛光垫上; 对抛光垫进行除水处理; 并将抛光液喷射到抛光垫上并抛光下一个晶片的金属材料。该方法可以防止晶片金属材料表面划伤，提高成品率。

4. 发明授权

US08748279B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08748279B2
公开(公告)日：2014-06-10
申请号：US13323489
申请日：2011-12-12
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： H01L21/336 , H01L21/00
CPC分类号： H01L21/28123
摘要： The present invention discloses a method of manufacturing semiconductor devices. The method includes a step of performing a chemical mechanical planarization processing on a poly-silicon layer before fabricating a poly-silicon gate such that the poly-silicon gates obtained in subsequent fabrication process are kept at the same height, which thus avoids the silicon nitride residues issue that occurs in the prior art. Therefore, the present invention is capable of enhancing product yield of semiconductor devices and improving device performances.
摘要翻译：本发明公开了半导体器件的制造方法。该方法包括在制造多晶硅栅极之前对多晶硅层进行化学机械平面化处理的步骤，使得在随后的制造工艺中获得的多晶硅栅极保持在相同的高度，从而避免了氮化硅在现有技术中发生的残留问题。因此，本发明能够提高半导体器件的产量，提高器件性能。

5. 发明授权

US08721401B2 Method for cleaning a polishing pad 有权
标题翻译：清洁抛光垫的方法
公开(公告)号：US08721401B2
公开(公告)日：2014-05-13
申请号：US13163667
申请日：2011-06-17
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： B24B53/017 , B24B53/00
CPC分类号： B24B53/017
摘要： A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.
摘要翻译：一种用于清洁抛光垫的方法包括：在抛光垫上分配第一量的去离子水; 在抛光垫上分配第一量的去离子水后，用酸度/碱度溶液清洗抛光垫; 用酸度/碱度溶液清洗抛光垫后用第二量的去离子水冲洗抛光垫; 从抛光垫去除酸度/碱度溶液。在随后的CMP工艺中，该方法包括抛光GST材料装置以获得GST材料装置的改进的性能。

6. 发明申请

US20120142150A1 METHOD FOR FORMING METAL GATE AND MOS TRANSISTOR 有权
标题翻译：形成金属栅和MOS晶体管的方法
公开(公告)号：US20120142150A1
公开(公告)日：2012-06-07
申请号：US13176678
申请日：2011-07-05
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/31053 , H01L29/6653 , H01L29/7833
摘要： The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses.
摘要翻译：本发明提供一种用于形成金属栅极的方法和用于形成MOS晶体管的方法。形成金属栅极的方法包括：提供基板; 在所述基板上形成牺牲氧化物层和多晶硅栅极; 在所述牺牲氧化物层和所述多晶硅栅极的侧壁上形成氧化硅层; 形成覆盖所述基板的停止层; 去除隔离物中的一部分停止层; 形成覆盖所述第一层间电介质层，所述间隔物和所述多晶硅栅极的第二层间电介质层; 抛光所述第二层间电介质层以暴露所述间隔物和所述多晶硅栅极; 去除多晶硅栅极以形成沟槽; 去除沟槽中的牺牲氧化物层; 并在沟槽中形成金属栅极。本发明防止了凹槽中的金属桥和凹陷中的金属残留物。

7. 发明授权

US08858817B2 Polishing apparatus and exception handling method thereof 有权
标题翻译：抛光装置及其异常处理方法
公开(公告)号：US08858817B2
公开(公告)日：2014-10-14
申请号：US13176674
申请日：2011-07-05
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： C03C15/00 , B24B37/34 , B24B37/005 , B24B55/00
CPC分类号： B24B37/005 , B24B37/34 , B24B55/00
摘要： A polishing apparatus and exception handling method thereof is disclosed, the exception handling method of polishing apparatus includes: sending an alarm signal when an alarm is generated because of an exception during polishing; and processing a wafer in the polishing apparatus with organic acid solution according to the received alarm signal. The method and apparatus prevent the metal material from corrosion which causes device failure, when there is an alarm generated because of an exception which stops the apparatus during polishing.
摘要翻译：公开了一种研磨装置及其例外处理方法，抛光装置的异常处理方法包括：在抛光时由于异常而产生报警时发送报警信号; 并根据所接收的报警信号，在有机酸溶液中处理抛光装置中的晶片。当由于在抛光期间停止装置的异常而产生报警时，该方法和装置防止金属材料腐蚀，导致装置故障。

8. 发明授权

US08541308B2 Polishing method and method for forming a gate 有权
标题翻译：抛光方法及形成栅极的方法
公开(公告)号：US08541308B2
公开(公告)日：2013-09-24
申请号：US13244196
申请日：2011-09-23
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/04 , H01L29/495 , H01L29/66545
摘要： A polishing method and a method for forming a gate are provided. The method includes forming a dummy gate on a semiconductor substrate including a sacrificial oxide layer and a polysilicon layer which covers the sacrificial oxide layer, forming spacers around the dummy gate, and successively forming a silicon nitride layer and a dielectric layer covering the silicon nitride layer. The method further includes polishing the dielectric layer until the silicon nitride layer is exposed, polishing the silicon nitride layer on a fixed abrasive pad until the polysilicon layer is exposed by using a polishing slurry with a PH value ranging from 10.5 to 11 and comprising an anionic surfactant or a zwitterionic surfactant. Additionally, the method includes forming an opening after removing the dummy gate, and forming a gate in the opening. The method eliminates potential erosion and dishing caused in the polishing of the silicon nitride layer.
摘要翻译：提供了一种用于形成栅极的抛光方法和方法。该方法包括在包括牺牲氧化物层和覆盖牺牲氧化物层的多晶硅层的半导体衬底上形成伪栅极，在虚拟栅极周围形成间隔物，并且依次形成氮化硅层和覆盖氮化硅层的电介质层。该方法还包括抛光电介质层，直到暴露氮化硅层，在固定的研磨垫上抛光氮化硅层，直到通过使用pH值范围为10.5至11的抛光浆料暴露多晶硅层，并且包含阴离子表面活性剂或两性离子表面活性剂。此外，该方法包括在去除虚拟门之后形成开口，并在开口中形成栅极。该方法消除了在氮化硅层的抛光中引起的潜在的腐蚀和凹陷。

9. 发明授权

US08507336B2 Method for forming metal gate and MOS transistor 有权
标题翻译：金属栅极和MOS晶体管的形成方法
公开(公告)号：US08507336B2
公开(公告)日：2013-08-13
申请号：US13176678
申请日：2011-07-05
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/31053 , H01L29/6653 , H01L29/7833
摘要： The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses.
摘要翻译：本发明提供一种用于形成金属栅极的方法和用于形成MOS晶体管的方法。形成金属栅极的方法包括：提供基板; 在所述基板上形成牺牲氧化物层和多晶硅栅极; 在所述牺牲氧化物层和所述多晶硅栅极的侧壁上形成氧化硅层; 形成覆盖所述基板的停止层; 去除隔离物中的一部分停止层; 形成覆盖所述第一层间电介质层，所述间隔物和所述多晶硅栅极的第二层间电介质层; 抛光所述第二层间电介质层以暴露所述间隔物和所述多晶硅栅极; 去除多晶硅栅极以形成沟槽; 去除沟槽中的牺牲氧化物层; 并在沟槽中形成金属栅极。本发明防止了凹槽中的金属桥和凹陷中的金属残留物。

10. 发明授权

US08313991B2 Method for fabricating a high-K metal gate MOS 有权
标题翻译：高K金属栅MOS的制造方法
公开(公告)号：US08313991B2
公开(公告)日：2012-11-20
申请号：US13178455
申请日：2011-07-07
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： H01L21/338 , H01L21/336 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/66545 , H01L29/78
摘要： A method is provided for fabricating a high-K metal gate MOS device. The method includes providing a semiconductor substrate having a surface region, a gate oxide layer on the surface region, a sacrificial gate electrode on the gate oxide layer, and a covering layer on the sacrificial gate electrode, an inter-layer dielectric layer on the semiconductor substrate and the sacrificial gate electrode. The method also includes planarizing the inter-layer dielectric layer to expose a portion of the covering layer atop the sacrificial gate electrode, implanting nitrogen ions into the inter-layer dielectric layer until a depth of implantation is deeper than a thickness of the portion of the covering layer atop the sacrificial gate electrode and polishing the inter-layer dielectric layer to expose a surface of the sacrificial gate electrode, removing the sacrificial gate electrode, and depositing a metal gate.
摘要翻译：提供了制造高K金属栅极MOS器件的方法。该方法包括提供具有表面区域，表面区域上的栅极氧化物层，栅极氧化物层上的牺牲栅极电极和牺牲栅电极上的覆盖层的半导体衬底，半导体上的层间电介质层基板和牺牲栅电极。该方法还包括平坦化层间电介质层以暴露牺牲栅电极顶部的覆盖层的一部分，将氮离子注入到层间电介质层中，直到植入深度比该部分的厚度更深覆盖层，并抛光该层间电介质层以暴露牺牲栅电极的表面，去除牺牲栅极电极和沉积金属栅极。

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