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    • 3. 发明申请
    • Method of supporting microelectronic wafer during backside processing
    • 在背面处理中支撑微电子晶片的方法
    • US20060286768A1
    • 2006-12-21
    • US11155751
    • 2005-06-16
    • Leonel AranaEdward PrackMichael Newman
    • Leonel AranaEdward PrackMichael Newman
    • H01L21/30
    • H01L21/78H01L21/304H01L21/306H01L21/6835
    • A method of supporting a microelectronic wafer during backside processing. The method comprises: selecting a rigid carrier, an adhesive, and a radiation source to emit radiation at a predetermined wavelength range; forming a wafer-carrier stack by providing the adhesive between the wafer and the carrier and curing the adhesive to bond the wafer to the carrier; subjecting the wafer in the wafer-carrier stack to backside processing; and removing the carrier and the adhesive from the wafer-carrier stack comprising detackifying the adhesive by irradiating the wafer-carrier stack from a carrier side thereof with radiation from the radiation source. The carrier is adapted to transmit therethrough at least some of the radiation from the radiation source. and the adhesive is adapted to absorb substantially all radiation transmitted through the carrier and is further adapted to be detackified as a result of absorbing said substantially all radiation.
    • 背面处理中支撑微电子晶片的方法。 该方法包括:选择刚性载体,粘合剂和辐射源以发射预定波长范围的辐射; 通过在晶片和载体之间提供粘合剂并固化粘合剂以将晶片结合到载体上来形成晶片载体堆叠; 对晶片载体叠层中的晶片进行背面处理; 以及从所述晶片载体堆叠中移除所述载体和所述粘合剂,其包括通过用来自所述辐射源的辐射从其载体侧照射所述晶片载体叠层而使所述粘合剂脱胶。 载体适于透射来自辐射源的至少一些辐射。 并且粘合剂适于吸收透射穿过载体的基本上所有的辐射,并且还适于由于吸收所述基本上所有的辐射而被去胶化。
    • 4. 发明申请
    • Method of supporting microelectronic wafer during backside processing using carrier having radiation absorbing film thereon
    • 在背面处理中使用其上具有辐射吸收膜的载体支撑微电子晶片的方法
    • US20070004171A1
    • 2007-01-04
    • US11173857
    • 2005-06-30
    • Leonel AranaEdward PrackSudhakar Kulkarni
    • Leonel AranaEdward PrackSudhakar Kulkarni
    • H01L21/30H01L21/00
    • H01L21/67132H01L21/67092H01L21/67115H01L21/6835H01L2221/6834H01L2221/68363H01L2224/16H01L2924/01019
    • A method of supporting a microelectronic wafer during backside processing. The method comprises: selecting a rigid carrier including a radiation absorbing film thereon, an adhesive, and a radiation source to emit radiation at a predetermined wavelength range; forming a wafer-carrier stack by providing the adhesive between the wafer and the carrier and curing the adhesive to bond the wafer to the carrier; subjecting the wafer in the wafer-carrier stack to backside processing; and removing the carrier and the adhesive from the wafer-carrier stack comprising detackifying the adhesive by irradiating the wafer-carrier stack from a carrier side thereof with radiation from the radiation source. The carrier is adapted to transmit therethrough at least some of the radiation from the radiation source. and the radiation absorbing film is adapted to absorb substantially all radiation transmitted through the carrier and is further adapted to be heated to detackify the adhesive as a result of absorbing said substantially all radiation.
    • 背面处理中支撑微电子晶片的方法。 该方法包括:选择其上包括辐射吸收膜的刚性载体,粘合剂和辐射源以发射预定波长范围的辐射; 通过在晶片和载体之间提供粘合剂并固化粘合剂以将晶片结合到载体上来形成晶片载体堆叠; 对晶片载体叠层中的晶片进行背面处理; 以及从所述晶片载体堆叠中移除所述载体和所述粘合剂,其包括通过用来自所述辐射源的辐射从其载体侧照射所述晶片载体叠层而使所述粘合剂脱胶。 载体适于透射来自辐射源的至少一些辐射。 并且辐射吸收膜适于吸收透射穿过载体的基本上所有辐射,并且还适于被加热以由于吸收所述基本上所有的辐射而使粘合剂脱胶。
    • 9. 发明申请
    • ELECTRICALLY-ISOLATED INTERCONNECTS AND SEAL RINGS IN PACKAGES USING A SOLDER PREFORM
    • 使用焊接前提的包装中的电气隔离互连和密封圈
    • US20070241448A1
    • 2007-10-18
    • US11765969
    • 2007-06-20
    • Leonel AranaJohn Heck
    • Leonel AranaJohn Heck
    • H01L23/12
    • B23K3/0623B23K2101/38H01L2224/17
    • Embodiments include electronic assemblies and methods for forming electronic assemblies. One embodiment includes a method of forming a MEMS device assembly, including forming an active MEMS region on a substrate. A plurality of bonding pads electrically coupled to the active MEMS region are formed. A seal ring wetting layer is also formed on the substrate, the seal ring wetting layer surrounding the active MEMS region. A single piece solder preform is positioned on the bonding pads and on the seal ring wetting layer, the single piece solder preform including a seal ring region and a bonding pad region. The seal ring region is connected to the bonding pad region by a plurality of solder bridges. The method also includes heating the single piece solder preform to a temperature above the reflow temperature, so that the bridges split and the solder from the preform accumulates on the seal ring wetting layer and the bonding pads. A lid is coupled to the solder. In certain embodiments the lid may include vias having conductive material therein for providing electrical contact to the MEMS device. Other embodiments are described and claimed.
    • 实施例包括用于形成电子组件的电子组件和方法。 一个实施例包括形成MEMS器件组件的方法,包括在衬底上形成有源MEMS区域。 形成电耦合到有源MEMS区域的多个接合焊盘。 密封环润湿层也形成在衬底上,围绕有源MEMS区域的密封环润湿层。 单块焊料预制件位于接合焊盘和密封环润湿层上,单件焊料预制件包括密封环区域和焊盘区域。 密封圈区域通过多个焊接桥连接到焊盘区域。 该方法还包括将单件焊料预制件加热到高于回流温度的温度,使得桥接器分裂,并且来自预制件的焊料积聚在密封环润湿层和接合焊盘上。 盖子与焊料相连。 在某些实施例中,盖可以包括其中具有导电材料的通孔,用于提供与MEMS器件的电接触。 描述和要求保护其他实施例。