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1. 发明授权

US08129767B2 Ferroelectric polymer memory module 有权
标题翻译：铁电聚合物记忆模块
公开(公告)号：US08129767B2
公开(公告)日：2012-03-06
申请号：US12874124
申请日：2010-09-01
申请人： Lee D. Rockford , Ebrahim Andideh
发明人： Lee D. Rockford , Ebrahim Andideh
IPC分类号： H01L29/76
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/11502
摘要： Ferroelectric polymer memory modules are described. In an example, a module has a first set of layers including a first ILD layer defining trenches therein, a first electrode layer disposed in the trenches of the first ILD layer, a first conductive polymer layer disposed on the first electrode layer and in the trenches of the first ILD layer, and a ferroelectric polymer layer disposed on the first conductive polymer layer, in and extending beyond the trenches of the first ILD layer. The module also has a second set of layers disposed on the first set of layers to define memory cells therewith. The second set of layers includes a second ILD layer defining trenches therein, a second conductive polymer layer disposed in the trenches of the second ILD layer, and a second electrode layer disposed on the second conductive polymer layer.
摘要翻译：描述铁电聚合物存储器模块。在一个示例中，模块具有包括在其中限定沟槽的第一ILD层的第一组层，设置在第一ILD层的沟槽中的第一电极层，设置在第一电极层上和沟槽中的第一导电聚合物层的第一ILD层和设置在第一导电聚合物层上的铁电聚合物层，并且延伸超过第一ILD层的沟槽。模块还具有设置在第一组层上的第二组层，以与其一起限定存储器单元。第二组层包括在其中限定沟槽的第二ILD层，设置在第二ILD层的沟槽中的第二导电聚合物层和设置在第二导电聚合物层上的第二电极层。

2. 发明申请

US20110073831A1 FERROELECTRIC POLYMER MEMORY DEVICE INCLUDING POLYMER ELECTRODES AND METHOD OF FABRICATING SAME 有权
标题翻译：包括聚合物电极的电介质聚合物存储装置及其制造方法
公开(公告)号：US20110073831A1
公开(公告)日：2011-03-31
申请号：US12874124
申请日：2010-09-01
申请人： Lee D. Rockford , Ebrahim Andideh
发明人： Lee D. Rockford , Ebrahim Andideh
IPC分类号： H01L45/00
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/11502
摘要： A method of fabricating a ferroelectric memory module with conducting polymer electrodes, and a ferroelectric memory module fabricated according to the method. The ferroelectric polymer memory module includes a first set of layers including: an ILD layer defining trenches therein; a first electrode layer disposed in the trenches; a first conductive polymer layer disposed on the first electrode layer; and a ferroelectric polymer layer disposed on the first conductive polymer layer. The module further includes a second set of layers including: an ILD layer defining trenches therein; a second conductive polymer layer disposed in the trenches of the ILD layer of the second set of layers; and a second electrode layer disposed on the second conductive polymer layer. The first conductive polymer layer and the second conductive polymer layer cover the electrode layers to provide a reaction and/or diffusion barrier between the electrode layers and the ferroelectric polymer layer.
摘要翻译：一种制造具有导电聚合物电极的铁电存储器模块的方法，以及根据该方法制造的铁电存储器模块。铁电聚合物存储模块包括第一组层，其包括：限定其中的沟槽的ILD层; 布置在沟槽中的第一电极层; 设置在所述第一电极层上的第一导电聚合物层; 以及设置在第一导电聚合物层上的铁电聚合物层。该模块还包括第二组层，其包括：限定其中的沟槽的ILD层; 第二导电聚合物层，设置在第二组层的ILD层的沟槽中; 以及设置在第二导电聚合物层上的第二电极层。第一导电聚合物层和第二导电聚合物层覆盖电极层以在电极层和铁电聚合物层之间提供反应和/或扩散阻挡层。

3. 发明授权

US07808024B2 Ferroelectric polymer memory module 有权
标题翻译：铁电聚合物记忆模块
公开(公告)号：US07808024B2
公开(公告)日：2010-10-05
申请号：US10951017
申请日：2004-09-27
申请人： Lee D. Rockford , Ebrahim Andideh
发明人： Lee D. Rockford , Ebrahim Andideh
IPC分类号： H01L29/76
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/11502
摘要： A ferroelectric polymer memory module includes a first set of layers including: a first ILD layer defining trenches therein; a first electrode layer disposed in the trenches of the first ILD layer; a first conductive polymer layer disposed on the first electrode layer and in the trenches of the first ILD layer; and a ferroelectric polymer layer disposed on the first conductive polymer layer and in the trenches of the first ILD layer; and a second set of layers disposed on the first set of layers to define memory cells therewith, the second set of layers including: a second ILD layer defining trenches therein; a second conductive polymer layer disposed in the trenches of the second ILD layer; and a second electrode layer disposed on the second conductive polymer layer.
摘要翻译：铁电聚合物存储模块包括第一组层，其包括：在其中限定沟槽的第一ILD层; 设置在第一ILD层的沟槽中的第一电极层; 第一导电聚合物层，设置在第一电极层和第一ILD层的沟槽中; 以及设置在第一导电聚合物层和第一ILD层的沟槽中的铁电聚合物层; 以及第二组层，设置在所述第一组层上以与其定义存储器单元，所述第二组层包括：在其中限定沟槽的第二ILD层; 设置在第二ILD层的沟槽中的第二导电聚合物层; 以及设置在第二导电聚合物层上的第二电极层。

4. 发明授权

US07239019B2 Selectively converted inter-layer dielectric 有权
标题翻译：选择性转换的层间电介质
公开(公告)号：US07239019B2
公开(公告)日：2007-07-03
申请号：US11170322
申请日：2005-06-28
申请人： Jihperng Leu , Grant M. Kloster , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
发明人： Jihperng Leu , Grant M. Kloster , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76835 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/312 , H01L21/3124 , H01L21/31695 , H01L21/76807 , H01L21/7682
摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
摘要翻译：公开了一种层间电介质结构及其制造方法。形成初始包含多孔基质和致孔剂的复合介电层。在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

5. 发明授权

US06943121B2 Selectively converted inter-layer dielectric 失效
公开(公告)号：US06943121B2
公开(公告)日：2005-09-13
申请号：US10302073
申请日：2002-11-21
申请人： Jihperng Leu , Grant M. Kloster , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
发明人： Jihperng Leu , Grant M. Kloster , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
IPC分类号： H01L21/312 , H01L21/316 , H01L21/768 , H01L21/302 , H01L21/31 , H01L21/461 , H01L21/469
CPC分类号： H01L21/76835 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/312 , H01L21/3124 , H01L21/31695 , H01L21/76807 , H01L21/7682
摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

6. 发明授权

US06699798B2 Promoting adhesion of fluoropolymer films to semiconductor substrates 有权
标题翻译：促进氟聚合物膜粘附到半导体衬底上
公开(公告)号：US06699798B2
公开(公告)日：2004-03-02
申请号：US10131017
申请日：2002-04-24
申请人： Lee D. Rockford
发明人： Lee D. Rockford
IPC分类号： H01L2131
CPC分类号： H01L21/0212 , G03F7/0046 , G03F7/085 , G03F7/16 , H01L21/02274 , H01L21/3127 , H01L21/76802
摘要： Adhesion of high fluorine content films to semiconductor substrates may be improved by forming an intervening adherence layer. The adherence layer may be formed from a plasma gas. In some cases, the adherence layer may be used to adhere photoresist for advanced photolithography processes to silicon substrates.
摘要翻译：通过形成中间粘附层，可以提高高含氟膜对半导体衬底的附着力。粘附层可以由等离子体气体形成。在一些情况下，粘附层可以用于将用于高级光刻工艺的光致抗蚀剂粘附到硅衬底。

7. 发明授权

US07018918B2 Method of forming a selectively converted inter-layer dielectric using a porogen material 失效
标题翻译：使用致孔剂材料形成选择性转化的层间电介质的方法
公开(公告)号：US07018918B2
公开(公告)日：2006-03-28
申请号：US10701251
申请日：2003-11-03
申请人： Grant M. Kloster , Kevin P. O'brien , Michael D. Goodner , Jihperng Leu , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
发明人： Grant M. Kloster , Kevin P. O'brien , Michael D. Goodner , Jihperng Leu , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
IPC分类号： H01L21/302 , H01L21/461 , H01L21/469 , H01L21/4763
CPC分类号： H01L21/312 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02362 , H01L21/3124 , H01L21/31695 , H01L21/76807 , H01L21/7682 , H01L21/76835 , H01L2221/1036 , H01L2221/1047
摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
摘要翻译：公开了一种层间电介质结构及其制造方法。形成初始包含多孔基质和致孔剂的复合介电层。在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

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