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    • 4. 发明授权
    • Self-aligned nano-scale device with parallel plate electrodes
    • 具有平行平板电极的自对准纳米级装置
    • US08476530B2
    • 2013-07-02
    • US12488948
    • 2009-06-22
    • Lawrence A. ClevengerZhengwen LiKevin S. PetrarcaRoger A. QuonCarl J. RadensBrian C. Sapp
    • Lawrence A. ClevengerZhengwen LiKevin S. PetrarcaRoger A. QuonCarl J. RadensBrian C. Sapp
    • H01B5/14
    • B81C1/00698B81B2201/0292
    • A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.
    • 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分,第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层,该导电层在邻接的深沟槽部分内具有锥形几何形状,使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后,形成在导电板的锥形垂直部分之间具有小间隔距离的装置。