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    • 5. 发明授权
    • Method for improving the stability, write-ability and manufacturability of magneto-resistive random access memory
    • 提高磁阻随机存取存储器的稳定性,写入能力和可制造性的方法
    • US09177627B2
    • 2015-11-03
    • US13987786
    • 2013-09-03
    • Laurence Lujun ChenDi (Laura) ChenMichael Meng Chen
    • Laurence Lujun ChenDi (Laura) ChenMichael Meng Chen
    • G11C11/00G11C11/16
    • G11C11/1675G11C11/1653G11C11/1673G11C11/1695G11C11/1697G11C2213/71
    • This invention provides the method to overcome 4 backwards which limit the manufacturability or production yield rate of Magneto-resistive random access memory (MRAM). The key points of this invention are: (1) providing method to improve the manufacturability through reducing bias variation, by using a compensation module to correct the bias point of extreme cells; (2) providing method to improve the manufacturability through removing outlier cells (called bad cells), by using “writing jump-over” and “reading exclusion” to exclude bad-cells; (3) providing method to reduce the bias point, amplitude and asymmetry variation, using shared fixed-magnetic-reference-layer and proper shape anisotropy; (4) providing method to improve the write-ability, using flipping-assistant-field to speed up STT flipping process by large current, and using heating resistance and heating cells by the same current (including global heating, row heating, column heating, or local cell heating, i.e. heating with conventional thermal nature or heating with thermagnonic spin-transfer torque).
    • 本发明提供了克服4次向后的方法,其限制了磁阻随机存取存储器(MRAM)的可制造性或生产成品率。 本发明的要点是:(1)通过使用补偿模块来校正极细胞的偏心点,提供减少偏差变化来提高可制造性的方法; (2)通过使用“写入跳转”和“读取排除”来排除坏细胞来提供通过去除异常细胞(称为坏细胞)来提高可制造性的方法; (3)提供使用共享固定磁参考层和适当形状各向异性来减少偏置点,振幅和不对称变化的方法; (4)提供提高写入能力的方法,使用翻转助理字段,通过大电流加速STT翻转处理,并使用相同电流(包括全局加热,行加热,列加热, 或局部电池加热,即用常规热性质加热或用热敏自旋转移转矩加热)。
    • 6. 发明申请
    • Method for improving the stabillity, write-ability and manufacturability of magneto-resistive random access memory
    • 提高磁阻随机存取存储器的稳定性,写入能力和可制造性的方法
    • US20150063011A1
    • 2015-03-05
    • US13987786
    • 2013-09-03
    • Laurence Lujun ChenDi (Laura) ChenMichael Meng Chen
    • Laurence Lujun ChenDi (Laura) ChenMichael Meng Chen
    • G11C11/16
    • G11C11/1675G11C11/1653G11C11/1673G11C11/1695G11C11/1697G11C2213/71
    • This invention provides the method to overcome 4 backwards which limit the manufacturability or production yield rate of Magneto-resistive random access memory (MRAM). The key points of this invention are: (1) providing method to improve the manufacturability through reducing bias variation, by using a compensation module to correct the bias point of extreme cells; (2) providing method to improve the manufacturability through removing outlier cells (called bad cells), by using “writing jump-over” and “reading exclusion” to exclude bad-cells; (3) providing method to reduce the bias point, amplitude and asymmetry variation, using shared fixed-magnetic-reference-layer and proper shape anisotropy; (4) providing method to improve the write-ability, using flipping-assistant-field to speed up STT flipping process by large current, and using heating resistance and heating cells by the same current (including global heating, row heating, column heating, or local cell heating, i.e. heating with conventional thermal nature or heating with thermagnonic spin-transfer torque).
    • 本发明提供了克服4次向后的方法,其限制了磁阻随机存取存储器(MRAM)的可制造性或生产成品率。 本发明的要点是:(1)通过使用补偿模块来校正极细胞的偏心点,提供减少偏差变化来提高可制造性的方法; (2)通过使用“写入跳转”和“读取排除”来排除坏细胞来提供通过去除异常细胞(称为坏细胞)来提高可制造性的方法; (3)提供使用共享固定磁参考层和适当形状各向异性来减少偏置点,振幅和不对称变化的方法; (4)提供提高写入能力的方法,使用翻转助理字段,通过大电流加速STT翻转处理,并使用相同电流(包括全局加热,行加热,列加热, 或局部电池加热,即用常规热性质加热或用热敏自旋转移转矩加热)。