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1. 发明授权

US4354898A Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures 失效
标题翻译：在InGaAsP / InP异质结构中优先蚀刻光学平面镜面的方法
公开(公告)号：US4354898A
公开(公告)日：1982-10-19
申请号：US276942
申请日：1981-06-24
申请人： Larry A. Coldren , Kazuhito Furuya
发明人： Larry A. Coldren , Kazuhito Furuya
IPC分类号： H01L21/306 , H01S5/00 , H01L21/308
CPC分类号： H01L21/30617
摘要： Highly reproducible, optically flat mirror facets are created by contacting a predetermined area of the InGaAsP/InP heterostructure system with a chemical etchant for a time period sufficient to expose a substantially vertical crystallographic surface throughout the entire heterostructure system. Contact of the exposed surface with HCl causes a preferred crystallographic plane to be exposed as an optically flat mirror facet.
摘要翻译：通过使InGaAsP / InP异质结构体系的预定区域与化学蚀刻剂接触足以暴露整个异质结构体系中基本上垂直的结晶表面的时间段而产生高度可重现的光学平面镜面。暴露表面与HCl的接触导致优选的结晶平面作为光学平面镜面曝光。

2. 发明授权

US5412231A Semiconductor device having organically doped structure 失效
标题翻译：具有有机掺杂结构的半导体器件
公开(公告)号：US5412231A
公开(公告)日：1995-05-02
申请号：US9755
申请日：1993-01-27
申请人： Kazuhito Furuya
发明人： Kazuhito Furuya
IPC分类号： H01L29/80 , H01L21/335 , H01L21/338 , H01L29/36 , H01L29/737 , H01L29/778 , H01L29/78 , H01L29/812 , H01L29/225
CPC分类号： H01L29/66462 , H01L29/36 , H01L29/737 , H01L29/7787 , H01L29/78 , H01L29/365
摘要： Mobility includes a semiconductor substrate, a non-doped layer applied on the semiconductor substrate, an electron supply layer applied on the non-doped layer, and a metal gate layer applied on the electron supply layer. The said electron supply layer has a structure in which impurity atoms serving as electron supply sources as well as scattering sources are arranged regularly, so that the structure is doped in an organized manner. Adjacent impurity atoms are separated from each other in a first direction, parallel to a direction in which an electron wave travels, by a first distance which is not larger than half of the wavelength of an electron wave. In a second direction which is perpendicular to the first direction, adjacent impurity atoms are seperated by a second distance which is not larger than the wavelength of an electron wave. In a third direction which is perpendicular both to the first and second directions, adjacent impurity atoms are separated by a third distance which is not larger than the wavelength of an electron wave. When the influence of the coherence length an electron cannot be ignored, the first, second and third distances are made not larger than half of the coherence length of an electron, and preferably not larger than a fifth of the coherence length.
摘要翻译：移动性包括半导体衬底，施加在半导体衬底上的非掺杂层，施加在非掺杂层上的电子供给层和施加在电子供给层上的金属栅极层。所述电子供给层具有规定地配置作为电子供给源的杂质和散射源的结构，从而以有组织的方式掺杂结构。相邻的杂质原子在平行于电子波行进的方向的第一方向上彼此分离，第一距离不大于电子波的波长的一半。在垂直于第一方向的第二方向上，相邻的杂质原子被分开不大于电子波的波长的第二距离。在与第一和第二方向垂直的第三方向上，相邻的杂质原子分开不大于电子波长的第三距离。当相干长度对电子的影响不能忽略时，第一，第二和第三距离不得大于电子的相干长度的一半，优选不大于相干长度的五分之一。

3. 发明授权

US4582390A Dielectric optical waveguide and technique for fabricating same 失效
标题翻译：电介质光波导及其制造技术
公开(公告)号：US4582390A
公开(公告)日：1986-04-15
申请号：US337142
申请日：1982-01-05
申请人： Kazuhito Furuya
发明人： Kazuhito Furuya
IPC分类号： G02B6/13 , G02B6/122 , G02B6/132 , G02B6/10
CPC分类号： G02B6/132
摘要： A multilayer dielectric optical waveguide (30, 40) is formed on a III-V semiconductor substrate layer (6) comprised of either InGaAsP or AlGaAs. A lower cladding layer (30) of dielectric material such as SiO.sub.x, (x.about.2) having a lower index of refraction than the substrate layer is directionally deposited on an exposed surface (17) of the substrate layer by a controlled evaporation process. A core layer (40) is fabricated on the lower cladding layer by coating an exposed surface (31) of the lower cladding layer with a dielectric material having an index of refraction greater than the index of the cladding layer. One material useful as the core layer is polyimide. Both one-dimensional (FIG. 8) and two-dimensional (FIG. 10) waveguides are capable of being made by appropriate addition of an upper cladding layer (50 or 60) about the core layer. The refractive index of the upper cladding layer is less than the refractive index of the core layer.
摘要翻译：在由InGaAsP或AlGaAs构成的III-V半导体衬底层（6）上形成多层电介质光波导（30,40）。具有比衬底层更低折射率的电介质材料（例如SiO x，（x D差2））的下包覆层（30）通过受控蒸发过程被定向沉积在衬底层的暴露表面（17）上。通过用折射率大于包层的折射率的介电材料涂覆下包层的暴露表面（31），在下包层上制造芯层（40）。用作芯层的一种材料是聚酰亚胺。一维（图8）和二维（图10）波导能够通过围绕芯层适当地添加上包层（50或60）而制成。上包层的折射率小于芯层的折射率。

4. 发明授权

US5436096A Method of manufacturing X-ray exposure mask 失效
标题翻译：制造X射线曝光掩模的方法
公开(公告)号：US5436096A
公开(公告)日：1995-07-25
申请号：US963695
申请日：1992-10-20
申请人： Kazuhito Furuya , Yasuyuki Miyamoto
发明人： Kazuhito Furuya , Yasuyuki Miyamoto
IPC分类号： G03F1/22 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22
摘要： The present invention can precisely manufacture an X-ray mask pattern at intervals of less than 10 nm by using a thin film crystalline growth method, applying a laminated layer body of a fine structure having a precision of less than 1 atomic layer onto a substrate, and utilizing the difference in X-ray absorption coefficients. A method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of material consisting of a combination of a semiconductor, metal and insulator having substantially equal lattice constants and largely different coefficients of X-ray absorption on a substrate of a crystal body to thicknesses of less than 10 .ANG. by an epitaxial crystal growth method, and manufacturing a mask for exposing streak-like X-rays on a desired resist as a result of the largely different coefficients of X-ray absorption between each layer.
摘要翻译：本发明可以通过使用薄膜晶体生长方法以小于10nm的间隔精确地制造X射线掩模图案，将具有小于1原子层的精密度的精细结构的层叠体施加到基板上，并利用X射线吸收系数的差异。一种制造X射线曝光掩模的方法包括以下步骤：将由半导体，金属和绝缘体的组合构成的两种材料交替层叠，所述半导体，金属和绝缘体具有基本相等的晶格常数和大体上不同的X射线吸收系数，晶体通过外延晶体生长方法的厚度小于10，并且由于各层之间的X射线吸收系数大大不同，制造用于在期望的抗蚀剂上暴露条纹状X射线的掩模。

5. 发明授权

US5364717A Method of manufacturing X-ray exposure mask 失效
标题翻译：制造X射线曝光掩模的方法
公开(公告)号：US5364717A
公开(公告)日：1994-11-15
申请号：US953669
申请日：1992-10-01
申请人： Kazuhito Furuya , Yasuyuki Miyamoto
发明人： Kazuhito Furuya , Yasuyuki Miyamoto
IPC分类号： G03F1/22 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22
摘要： The present invention relates to a method of manufacturing an exposure mask having an unprecedented supermicrostructure for an X-ray exposure method favorable for conventional supermicro exposure using lithography techniques. The method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of compound semiconductors as a thin film having a periodic structure with controllability of about one atomic layer on a substrate selectively etching only one material for forming the periodic structure, forming an uneven difference between adjacent layers of the laminate body, and manufacturing a mask for exposing streaks on a desired resist with the aid of a difference of X-rays absorption amounts between each layer by exposing X-ray in parallel to the direction of the laminate layer.
摘要翻译：本发明涉及一种制造曝光掩模的方法，该曝光掩模具有前所未有的超微结构，用于有利于使用光刻技术的常规超微曝光的X射线曝光方法。制造X射线曝光掩模的方法包括以下步骤：在基板上交替层叠两种化合物半导体作为具有约一个原子层的可控性的具有周期性结构的薄膜的选择性地仅刻蚀形成周期性结构的一种材料，在层压体的相邻层之间形成不均匀的差异，并且制造用于通过将X射线平行于每个层的方向上的X射线吸收量的差异来在所需抗蚀剂上暴露条纹的掩模层压层。

6. 发明授权

US4464762A Monolithically integrated distributed Bragg reflector laser 失效
标题翻译：单片集成分布式布拉格反射激光器
公开(公告)号：US4464762A
公开(公告)日：1984-08-07
申请号：US350879
申请日：1982-02-22
申请人： Kazuhito Furuya
发明人： Kazuhito Furuya
IPC分类号： G02B6/122 , H01S5/00 , H01S5/125 , H01S3/19
CPC分类号： H01S5/125
摘要： In a heterostructure distributed Bragg reflector laser, at least one multilayer waveguide substantially comprised of a silicon dielectric compound is monolithically integrated with an active semiconductor heterostructure medium. Bragg reflectors are properly disposed within the waveguide.
摘要翻译：在异质结构分布布拉格反射器激光器中，基本上由硅介电化合物组成的至少一个多层波导与有源半导体异质结构介质整体集成。布拉格反射器适当地布置在波导内。

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