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1. 发明授权

US06468906B1 Passivation of copper interconnect surfaces with a passivating metal layer 有权
标题翻译：用钝化金属层钝化铜互连表面
公开(公告)号：US06468906B1
公开(公告)日：2002-10-22
申请号：US09617009
申请日：2000-07-14
申请人： Lap Chan , Kuan Pei Yap , Kheng Chok Tee , Flora S. Ip , Wye Boon Loh
发明人： Lap Chan , Kuan Pei Yap , Kheng Chok Tee , Flora S. Ip , Wye Boon Loh
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , H01L21/76858 , H01L21/76867 , H01L21/76886
摘要： An interconnect line on an IMD layer on a semiconductor device is formed in an interconnect hole in the IMD layer. The interconnect hole has walls and a bottom in the IMD layer. A diffusion barrier is formed on the walls and the bottom of the hole. Fill the interconnect hole with a copper metal line. Perform a CMP step to planarize the device and to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole. Alternatively, a blanket deposit of a copper metal line layer covers the diffusion layer and fills the interconnect hole with a copper metal line. Perform a CMP process to planarize the device to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole in a self-aligned deposition process.
摘要翻译：在IMD层中的互连孔中形成半导体器件上的IMD层上的互连线。互连孔在IMD层中具有壁和底部。在孔的壁和底部形成扩散阻挡层。用铜金属线填充互连孔。执行CMP步骤以使器件平坦化，并移除IMD层上方的铜。在孔的顶部包埋铜金属线的铜金属线的表面上沉积钝化金属层。或者，铜金属线层的覆盖沉积覆盖扩散层并用铜金属线填充互连孔。执行CMP工艺以平坦化器件以去除IMD层上方的铜。在自对准沉积工艺中，在孔的顶部封装铜金属线的铜金属线的表面上沉积钝化金属层。

2. 发明授权

US6100195A Passivation of copper interconnect surfaces with a passivating metal layer 有权
公开(公告)号：US6100195A
公开(公告)日：2000-08-08
申请号：US222275
申请日：1998-12-28
申请人： Lap Chan , Kuan Pei Yap , Kheng Chok Tee , Flora S. Ip , Wye Boon Loh
发明人： Lap Chan , Kuan Pei Yap , Kheng Chok Tee , Flora S. Ip , Wye Boon Loh
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76849 , H01L21/76858 , H01L21/76867 , H01L21/76886
摘要： An interconnect line on an IMD layer on a semiconductor device is formed in an interconnect hole in the IMD layer. The interconnect hole has walls and a bottom in the IMD layer. A diffusion barrier is formed on the walls and the bottom of the hole. Fill the interconnect hole with a copper metal line. Perform a CMP step to planarize the device and to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole. Alternatively, a blanket deposit of a copper metal line layer covers the diffusion layer and fills the interconnect hole with a copper metal line. Perform a CMP process to planarize the device to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole in a self-aligned deposition process.

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