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1. 发明授权

US3814968A Solid state radiation sensitive field electron emitter and methods of fabrication thereof 失效
标题翻译：固态辐射敏感场发射体及其制造方法
公开(公告)号：US3814968A
公开(公告)日：1974-06-04
申请号：US22551772
申请日：1972-02-11
申请人： LUCAS INDUSTRIES LTD
发明人： NATHANSON H , THOMAS R , GULDBERG J
IPC分类号： H01J1/304 , H01J1/32 , H01J1/34 , H01J1/35 , H01J9/02 , H01J9/12 , H01J31/48 , H01J31/49 , H01J39/06 , H01J39/16
CPC分类号： H01J1/34 , H01J1/304 , H01J9/12 , H01J31/48 , H01J31/49 , H01J2201/3423 , Y10S257/917
摘要： A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips diffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.
摘要翻译：一种固态辐射敏感场发射器阴极，其包括单晶半导体部件，该单晶半导体部件具有主体部分，其具有从针状或晶须状部件形式的一个表面以紧密间隔且非常尖锐的电子发射突起的均匀阵列。当平面平行正极安装在表面附近时，电子发射成真空。阴极响应于输入辐射，例如电子或指向阴极的光，以修改来自电子发射体投影阵列的电子发射。通过在半导体材料的晶片上提供在半导体材料的晶片上提供具有比半导体材料更大的抗蚀刻性能的材料的岛的预定图案或镶嵌的制造阴极的方法，然后在岛之间和之下蚀刻以切割到点其中岛仅由半导体材料的小晶须支撑。去除岛导致电子发射体从每个岛下面暴露，其中在体部分内产生的载流子以及在尖端的耗尽区内产生的载流子扩散到电子发射体突起，其中在尖端处建立高电场电子发射器投影导致电子发射主要是由于导带隧穿。该装置提供约106个发射点的紧密接近，以便实现照相式成像。

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